| Patent application number | Description | Published |
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| 20100180925 | THIN-FILM SOLAR CELL MODULE - To provide a thin-film solar cell module capable of preventing damage to a cell and a contact line. | 07-22-2010 |
| 20110011439 | PHOTOVOLTAIC POWER SYSTEM - A system of high efficiency and low cost is provided as a photovoltaic power system comprising a solar cell connected to a power converter. | 01-20-2011 |
| 20110073362 | TERMINAL BOX AND SOLAR CELL MODULE - According to one embodiment, a terminal box includes a box case placed on and fixed to a back film of a solar cell string and a terminal panel formed on the box case. The box case includes a case main body placed on and fixed to the back film of the solar cell string and a terminal panel fixing portion for placing and fixing the terminal panel above the case main body. An opening for passing an output lead wire through the terminal panel is formed continuously from the bottom face of the case main body to the top face of the terminal panel. One edge of the terminal panel is provided so as to protrude from the terminal panel fixing portion such that the tip of the output lead wire can be bent and latched on. | 03-31-2011 |
| 20110088749 | SOLAR CELL MODULE - In a solar cell module in which each lead wire is disposed on a back face electrode film of a solar cell string with one end thereof connected to an electrode lead-out portion provided at an end of the solar cell string and the other end of the lead wire is bent so as to stand up from the face of the back face electrode film to form an output lead portion, in the output lead portion, only one side of a tip-side portion of the lead wire including a bent portion is coated with an insulating film. | 04-21-2011 |
| 20110232748 | SOLAR CELL MODULE AND MANUFACTURING METHOD THEREOF - In a solar cell module and a manufacturing method thereof according to an embodiment of the present invention, a solar cell ( | 09-29-2011 |
| 20110265845 | THIN-FILM SOLAR CELL MODULE - The thin-film solar cell module according to the present invention has: a substrate; and a cell module having three or more cell strings, each of which has a constant width, wherein each cell string has a plurality of solar cells having the same width as the cell string and connected in series, the cell strings have the same length as the solar cells connected in series and are provided on the substrate in parallel connection so as to be aligned, the solar cells respectively have a front surface electrode, a photoelectric conversion layer and a rear surface electrode layered in this order, each cell string has contact lines electrically connecting the front surface electrode of a first solar cell to the rear surface electrode of a second solar cell, and the cell strings at both ends in the three or more cell strings have a width narrower than the other cell string. | 11-03-2011 |
| 20110265846 | THIN-FILM SOLAR CELL MODULE AND THIN-FILM SOLAR CELL ARRAY - The thin-film solar cell module according to the present invention has a substrate and a cell module that includes three or more cell strings, each of which has a constant width, and is characterized in that each cell string has a plurality of solar cells which are connected in series, the cell strings are provided on the substrate so as to be aligned in a direction perpendicular to a direction in which the solar cells are connected in series and connected to each other in parallel, the solar cells each have a front surface electrode, a photoelectric conversion layer and a rear surface electrode stacked in this order, the cell strings have contact lines which electrically connect the front surface electrode of one of neighboring solar cells of the solar cells and the rear surface electrode of the other, the solar cells being included in the cell string, and have the same width as the cell string, and at least one of the cell strings at the two ends of the above described three or more cell strings has a width greater than the other cell strings. | 11-03-2011 |
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| 20100144162 | METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD - A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate. | 06-10-2010 |
| 20100178423 | METHOD FOR CONTROLLING FLOW AND CONCENTRATION OF LIQUID PRECURSOR - A method for controlling flow and concentration of a liquid precursor includes: supplying a carrier gas to a first auto-pressure regulator and outputting therefrom the carrier gas at a first pressure to a precursor reservoir; outputting the mixture of the vaporized precursor and the carrier gas from the precursor reservoir; and supplying the mixture to a second auto-pressure regulator and outputting therefrom the mixture at a second pressure to a reactor via an orifice. | 07-15-2010 |
| 20100221925 | METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD - A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate. | 09-02-2010 |
| 20100255218 | Method of Depositing Silicon Oxide Film by Plasma Enhanced Atomic Layer Deposition at Low Temperature - A method of depositing a silicon oxide film on a resist pattern or etched lines formed on a substrate by plasma enhanced atomic layer deposition (PEALD) includes: providing a substrate on which a resist pattern or etched lines are formed in a PEALD reactor; controlling a temperature of a susceptor on which the substrate is placed at less than 50° C. as a deposition temperature; introducing a silicon-containing precursor and an oxygen-supplying reactant to the PEALD reactor and applying RF power therein in a cycle, while the deposition temperature is controlled substantially or nearly at a constant temperature of less than 50° C., thereby depositing a silicon oxide atomic layer on the resist pattern or etched lines; and repeating the cycle multiple times substantially or nearly at the constant temperature to deposit a silicon oxide atomic film on the resist pattern or etched lines. | 10-07-2010 |
| 20110014795 | Method of Forming Stress-Tuned Dielectric Film Having Si-N Bonds by Modified PEALD - A method of forming stress-tuned dielectric films having Si—N bonds on a semiconductor substrate by modified plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen-and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space using a high frequency RF power source and a low frequency RF power source; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a stress-tuned dielectric film having Si—N bonds on the substrate. | 01-20-2011 |
| 20110086516 | METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD - A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration. | 04-14-2011 |
| 20110217838 | METHOD FOR FORMING INTERCONNECT STRUCTURE HAVING AIRGAP - A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench. | 09-08-2011 |
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| 20090070343 | METHOD FOR MANAGING A DATABASE SYSTEM - To provide a database which has plural log storage areas, and eliminates the sort in the restoration process by means of the application of logs, thereby carrying out the restoration quickly. A management server allocates DB servers to a corresponding one of plural data storage areas so as to access the corresponding one. The DB servers store data to the allocated data storage areas. When the data is referenced or updated, a log representing a data change history is stored in preset log areas for each data server. When the management server transmits a notification to change the data storage areas, area remapping logs are stored in log areas. | 03-12-2009 |
| 20090125678 | METHOD FOR READING DATA WITH STORAGE SYSTEM, DATA MANAGING SYSTEM FOR STORAGE SYSTEM AND STORAGE SYSTEM - Provided is a database management system obtains storage mapping information which associates addresses in a plurality of physical disk drives within the storage system and addresses in logical disk drives including these physical disk drives, to create queues individually for each of the plurality of physical disk drives. The database management system receives a plurality of read requests which request to read data out of the physical disk drives via the logical disk drives provided by the storage system, sorts the read requests by their destination, and accumulates the read requests in the respective queues associated with the request destination physical disk drives. The database management system reallocates the accumulated read requests into an order that shortens the data read time in each physical disk drive, and then issues the read requests to the storage system. | 05-14-2009 |
| 20100023480 | INDEXING METHOD OF DATABASE MANAGEMENT SYSTEM - A database management system has a plurality of database servers and data can be transferred between them by partitioning a data area into small areas and altering allocation of the small areas to the database servers. After altering the configuration, there occurs degradation in processing speed that accompanies re-creation of the index. If this problem is solved by using conventional techniques, noticeable degradation in processing speed will occur to a specific query at the time of a steady state operation. Accordingly, an index created for each of the small areas and an index to all of the small areas are allocated to the database server and used in combination. | 01-28-2010 |
| 20100211577 | DATABASE PROCESSING SYSTEM AND METHOD - Provided is a database system in which sorting of query results is sped up. The database system stores storage location information in which storage locations of the pieces of data are recorded in a given order. When there is no second task, which is executed based on data that is fetched in a first task, whether every piece of data requested in a third task, which is executed before the first task, has been fetched is determined. In the case where every piece of data requested in the third task has been fetched, data fetched in the first task is output. In the case where some of the data requested in the third task has not been fetched, data fetched in the first task is kept in a temporary buffer until every piece of data requested in the third task is fetched, and then output. | 08-19-2010 |
| 20100293156 | DATABASE PROCESSING METHOD AND DATABASE PROCESSING SYSTEM - Provided is a database processing system including: a computer for outputting data in response to a received query request; and a storage system including a storage device for storing the data, in which: the storage device stores a plurality of partial indices indicating a storage location of the data; the data stored in the storage device is grouped; and the computer is configured to: receive the query request for the data; acquire one of the plurality of partial indices; specify, based on the query request for the data and the acquired one of the plurality of partial indices, a location at which the requested data is stored; and send a request to acquire the data stored at the specified location to the storage system. Accordingly, in the database processing system, a time period necessary to input and output the data is shortened. | 11-18-2010 |
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| 20090200251 | CLAMPING MECHANISM FOR SEMICONDUCTOR DEVICE - A clamping mechanism for a semiconductor substrate includes: a C-shaped pickup plate; a susceptor top plate having a periphery adapted to receive and support an inner periphery portion of the C-shaped pickup plate thereon; and a clamp comprising (i) a top ring portion for clamping the substrate by sandwiching a periphery of the substrate between the top ring portion and the susceptor top plate and (ii) a pickup plate supporting portion adapted to support an outer periphery portion of the C-shaped pickup plate, wherein the C-shaped pickup plate is movable between the top ring portion and the pickup plate supporting portion, and the clamp is movable upward together with the C-shaped pickup plate and the susceptor top plate. | 08-13-2009 |
| 20100062862 | GAMING MACHINE THAT SENSES PLAYER PLAYING GAME THEREON - A gaming machine includes at least a human body detection sensor. The human body detection sensor is disposed on a lower face of a housing portion, so as to face downward and face a cabinet main body. In addition, the gaming machine is provided with a sound sensor on an upper face thereof, and starts executing a game in a case where the human body detection sensor responds and then the sound sensor detects a player's voice. | 03-11-2010 |
| 20100124618 | Method of Forming Insulation Film Using Plasma Treatment Cycles - A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma. | 05-20-2010 |
| 20100124621 | Method of Forming Insulation Film by Modified PEALD - A method of forming an insulation film by alternating multiple times, respectively, a process of adsorbing a precursor onto a substrate and a process of treating the adsorbed surface using reactant gas and a plasma, wherein a plasma is applied in the process of supplying the precursor. | 05-20-2010 |
| 20100184302 | Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD - A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate. | 07-22-2010 |
| 20110165948 | GAMING MACHINE OF REDUCED INSTALLATION AREA AND IMPROVED VISIBILITY - Provided is a gaming machine having a cabinet. Between the back as a back face and the right side face of the sides of the cabinet, the gaming machine has a right end side, which is formed by cutting a plane parallel to the gravitational direction in a manner to join lines spaced at predetermined distances in the individual directions of the back and the right side face from a line of intersection, on which the back and the right side face intersect when extended. The gaming machine also has a left end side between the back and a left side face. Moreover, the right end side and the left end side are symmetric with respect to a plane dividing the cabinet equally to the right and left. | 07-07-2011 |
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| 20090096107 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In a semiconductor integrated circuit device, an element forming region and a metal wiring layer are covered with a passivation layer on a semiconductor substrate which is cut out in a rectangular shape. At four corners of the device, the passivation layer is provided with corner non-wiring regions formed directly on the semiconductor substrate. Thus, crack generation on the passivation layer due to heat stress can be suppressed. | 04-16-2009 |
| 20090219065 | Semiconductor Device and Electronic Apparatus - A read-start-timing set circuit is connected to a timing terminal (CT | 09-03-2009 |
| 20090309117 | PROTECTION CIRCUIT, AND SEMICONDUCTOR DEVICE AND LIGHT EMITTING DEVICE USING SUCH PROTECTION CIRCUIT - In a protection circuit connected, via lines including an inductance component, to a circuit to be protected, a first transistor is arranged on a path to ground from a connection point of the protection circuit and the line. A second transistor is arranged on a path to ground from a connection point of the circuit to be protected and the line, and extracts, from a connection point, a current corresponding to a current flowing in the first transistor. The first and the second transistors are NPN bipolar transistors having a base and an emitter are commonly connected. A resistor is connected between the base and the emitter of the first transistor, and a diode is connected between the base and a collector. | 12-17-2009 |
