| Patent application number | Description | Published |
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| 20090018037 | NANOPARTICLE-CONTAINING LUBRICATING OIL COMPOSITIONS - [Object] To provide a nanoparticle-containing lubricating oil composition which demonstrates a low friction coefficient and realizes a further fuel economy. | 01-15-2009 |
| 20090232218 | MOTION VECTOR ENCODING DEVICE AND DECODING DEVICE - A prediction error generating unit generates a predictive vector from the motion vectors of a plurality of adjacent blocks, and obtains a difference from a target vector. A plurality of variable-length coding units respectively encode the output of the prediction error generating unit with different encoding methods. A determining unit estimates the accuracy of the predictive vector generated by the prediction error generating unit based on the degrees of non-uniformity of the motion vectors of the plurality of adjacent blocks. A selecting unit selects one of the encoding results obtained by the plurality of variable-length coding units. | 09-17-2009 |
| 20110064143 | MOTION VECTOR ENCODING DEVICE AND DECODING DEVICE - A prediction error generating unit generates a predictive vector from the motion vectors of a plurality of adjacent blocks, and obtains a difference from a target vector. A plurality of variable-length coding units respectively encode the output of the prediction error generating unit with different encoding methods. A determining unit estimates the accuracy of the predictive vector generated by the prediction error generating unit based on the degrees of non-uniformity of the motion vectors of the plurality of adjacent blocks. A selecting unit selects one of the encoding results obtained by the plurality of variable-length coding units. | 03-17-2011 |
| 20110136708 | GREASE COMPOSITION - There is provided a grease composition, including: a base oil; a metal soap thickener formed of at least one metal selected from the group consisting of lithium, calcium, magnesium and aluminum and a fatty acid containing at least one selected from the group consisting of a hydroxyl group, a carboxyl group and a carboxylic acid metal salt group in each molecular structure; and nanoparticles formed of at least one selected from the group consisting of oxides, carbides and diamond materials. | 06-09-2011 |
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| 20090289044 | ARC WELDING CONTROL METHOD AND ARC WELDING APPARATUS - An arc welding control method carries out weld with a welding current and a welding speed different from those at a steady welding period according to intrinsic resistivity of a weld wire or a base material at a welding start period and a welding end period, so as to obtain a satisfactory welding quality. | 11-26-2009 |
| 20110226749 | ARC WELDING CONTROL METHOD AND ARC WELDING CONTROL SYSTEM - A welding control method alternately repeats a short circuit period, during which a welding wire and an object to be welded short-circuit, and an arc period, during which an arc is generated and discharged, to weld the object to be welded. The method compares average output voltage, which is an average of welding voltage calculated during welding, to set voltage preliminarily set, and controls a welding output current produced when an arc is generated based on the comparison result therefrom, to regulate the meltage of the wire for adjusting the arc length, which brings the short circuit cycle closer to a constant one when a disturbance (e.g. extended or shortened arc length) occurs. | 09-22-2011 |
| 20120000895 | METHOD OF CONTROLLING WELDING - A welding control method for a welding device having an output characteristic with a predetermined gradient showing a relation between a welding output voltage and a welding output current. By setting a set target welding voltage that is higher than the set initial welding voltage according to a difference between the set initial welding voltage and the welding output voltage, the welding output voltage is controlled to be the set target welding voltage. Thus, a proper arc length can be achieved early by correcting the change of the arc length due to, for example, motion of the hands of a welding operator. | 01-05-2012 |
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| 20090023295 | Manufacturing method for semiconductor chips - By performing plasma etching on the second surface of a semiconductor wafer on the first surface of which an insulating film is placed in dividing regions and on the second surface of which a mask for defining the dividing regions are placed, the second surface being located opposite from the first surface, the insulating film is exposed from an etching bottom portion by removing portions that correspond to the dividing regions. Subsequently, by continuously performing the plasma etching in the state in which the exposed surfaces of the insulating film are charged with electric charge due to ions in the plasma, corner portions put in contact with the insulating film are removed. Subsequently, by removing the mask and thereafter performing plasma etching on the second surface, corner portions located on the second surface side are removed. | 01-22-2009 |
| 20090057838 | Manufacturing Method for Semiconductor Chips, and Semiconductor Chip - In a manufacturing method for performing plasma etching on a second surface of a semiconductor wafer that has a first surface where an insulating film is placed in dividing regions and the second surface which is opposite from the first surface and on which a mask for defining the dividing regions is placed thereby exposing the insulating film from etching bottom portions by removing portions that correspond to the dividing regions and subsequently continuously performing the plasma etching in the state in which the exposed surfaces of the insulating film are charged with electric charge due to ions in the plasma thereby removing corner portions put in contact with the insulating film in the device-formation-regions, isotropic etching is performed on the semiconductor wafer at any timing. | 03-05-2009 |
| 20090093104 | MANUFACTURING METHOD FOR SEMICONDUCTOR CHIPS - By forming dividing-groove portions in accordance with dividing regions on the second surface of a semiconductor wafer where an insulating film is placed in the dividing regions of the first surface and performing etching of the entire second surface and the surfaces of the dividing-groove portions by performing plasma etching from the second surface, corner portions on the second surface side are removed, while the insulating film is exposed from the etching bottom portion by removing the dividing-groove portions in the dividing regions. And by continuously performing the plasma etching in a state in which the exposed insulating film is surface charged with electric charge due to ions in plasma, corner portions on the first surface side put in contact with the insulating film are removed, and semiconductor chips that have a high transverse rupture strength are provided. | 04-09-2009 |
| 20090145359 | Gas Shower Plate for Palsma Processing Apparatus - In a plasma processing apparatus for generating a plasma in a plasma generation space between a lower electrode and an upper electrode so that a processing object mounted on the lower electrode is subjected to plasma processing, a plurality of cutout portions for absorption of strain caused by thermal expansion due to rapid temperature increases in the plasma processing are formed at an equal pitch in an outer edge portion of a gas shower plate included in the upper electrode. Thus, the gas shower plate can be prevented from being damaged by occurrence of cracks in the outer edge portion of the gas shower plate or the like. | 06-11-2009 |
| 20090197393 | Method for dividing semiconductor wafer and manufacturing method for semiconductor devices - In a semiconductor wafer including a plurality of imaginary-divided-regions which are partitioned by imaginary-dividing-lines that are respectively arranged in a grid-like arrangement on the semiconductor wafer and a circumferential line that is the outer periphery outline of the semiconductor wafer, a mask is placed so as to expose an entirety of surfaces of the wafer corresponding to respective removal-regions, the removal-regions being regions in approximately triangular form partitioned by the circumferential line of the wafer and the imaginary-dividing-lines and being some of the imaginary-divided-regions, and then plasma etching is performed on a mask placement-side surface, by which the semiconductor wafer is divided into the individual semiconductor devices along dividing lines while portions correspond to the removal-regions in the wafer are removed. | 08-06-2009 |
| 20090266488 | Plasma Processing Apparatus - A plasma processing apparatus includes a stage which is a lower electrode, an upper electrode which is a counter electrode for the lower electrode, and a processing chamber in which the lower and the upper electrodes are placed. The apparatus supplies a gas to a plasma generation space located between the lower and the upper electrodes to generate a plasma so that a processing object is subjected to plasma processing. In the apparatus, the upper electrode is formed up of a body portion having a gas supply port, a gas-permeable porous plate located on the underside of the body portion so as to close the gas supply port, and a support member for supporting the outer edge portion of the porous plate. Slits for absorption of strain due to thermal expansion in the plasma processing are formed at a pitch in the outer edge portion of the porous plate. | 10-29-2009 |
