| Patent application number | Description | Published |
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| 20090104374 | Substrate Processing Method Using A Substrate Processing Apparatus - A substrate processing apparatus vacuum reactor is internally divided into an upper part and a lower part that are separated from each other by an electrically conductive partitioning plate grounded. The upper part of the vacuum reactor is a plasma discharge space in which an rf electrode is arranged, and the lower part of the vacuum reactor is a substrate process space in which a substrate support mechanism is disposed. The partitioning plate has a plurality of through-holes that are provided to pass vertically through it, and has an internal space that is isolated from the plasma discharge space and communicates with the substrate process space. Each of the plurality of through-holes provided on the partitioning plate has a vertical length of between 5 mm and 30 mm, a bore diameter of between 5 mm and 30 mm and an aspect ratio of above 1 and below 2. | 04-23-2009 |
| 20090126629 | Film-forming system and film-forming method - A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into a plasma generating space provided with a high-frequency electrode and a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon. A gas for generating desired active species by discharge plasma is introduced into the plasma generating space. Said desired active species are supplied to the film-forming treatment space through a plurality of penetration holes formed in the electroconductive partition plate for communicating the plasma generating space with the film-forming treatment space. Said electroconductive partition plate has a first internal space separated from the plasma generating space and communicating with the film-forming treatment space via a plurality of material gas diffusion holes. A material gas is introduced from the outside into said first internal space and supplied into the film-forming treatment space through a plurality of said material gas diffusion holes. Said electroconductive partition plate further has a second internal space separated from said first internal space and communicating with said film-forming treatment space via a plurality of gas diffusion holes. A gas other than said material gas is introduced from the outside into said second internal space. A film is deposited on the substrate by a reaction between said active species and said material gas supplied to said film-forming treatment space. | 05-21-2009 |
| 20090155491 | Film-forming method for forming metal oxide on substrate surface - A film-forming method includes the steps of introducing oxygen radicals and an organic raw material gas containing a metal element into a vacuum container, and reacting the organic raw material gas with the oxygen radicals, thereby forming a metal oxide film on a surface of a substrate disposed in the vacuum container. | 06-18-2009 |
| 20100111512 | HEATING PROCESS APPARATUS - An object of the present invention is to provide a heating process apparatus capable of being controlled to a constant temperature and to temperatures in a high-temperature range higher than or equal to a 1850 degrees. A heating process apparatus includes: a process chamber; a heat-processed object support member provided in the process chamber; a heater provided inside the heat-processed object support member; and temperature measuring means for measuring the temperature of the heat-processed object support member; wherein the temperature measuring means is provided outside a transmissive window provided in a peripheral wall of the process chamber and through which infrared energy radiated from the heat-processed object support member can be transmitted; and the temperature measuring means comprises a collector collecting infrared energy radiated from the heat-processed object support member and a calculating unit calculating temperature based on the ratio between the intensities of two wavelengths in the infrared. | 05-06-2010 |
| 20110050932 | IMAGE PICKUP APPARATUS - When the shooting mode selector lever switches the shooting mode to the still image shooting mode, the viewfinder mode is switched to the optical viewfinder mode, and switching from the optical viewfinder mode to the electronic viewfinder mode is performed by operation of the start-stop button. When the shooting mode selector lever switches the shooting mode to the movie shooting mode, the viewfinder mode is switched to the electronic viewfinder mode, and movie shooting is started by operation of the start-stop button. | 03-03-2011 |
| Patent application number | Description | Published |
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| 20080213988 | SUBSTRATE HEATING APPARATUS AND SEMICONDUCTOR FABRICATION METHOD - A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed. | 09-04-2008 |
| 20080296579 | NANOSILICON SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR CIRCUIT DEVICE USING NANOSILICON SEMICONDUCTOR SUBSTRATE MANUFACTURED BY THE METHOD - This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate. | 12-04-2008 |
| 20100006560 | SUBSTRATE HEATING APPARATUS AND SUBSTRATE HEATING METHOD - In a substrate heating apparatus including a vacuum vessel with an interior separated by a wall body into a first space and a second space, the first space being evacuated to a vacuum by a first exhaust means and accommodating a substrate to be heated, and the second space being evacuated to a vacuum by a second exhaust means and including a heating means for heating the substrate accommodated in the substrate, the time required to evacuate the first space to a vacuum by the first exhaust means is shortened, thus improving the throughput. The wall body has a non-coating surface, which is not coated, on part of a wall body surface which faces the second space. A coating is formed on the remaining portion of the wall body surface. | 01-14-2010 |
| 20100037822 | VACUUM PROCESSING APPARATUS - A substrate processing apparatus includes a vacuum processing vessel, a partition which is made of a conductive material, and partitions the interior of the vacuum processing vessel into a first space for generating a plasma, and a second space for processing a substrate by the plasma, a high-frequency electrode for plasma generation installed in the first space, and a substrate holding mechanism which is installed in the second space and holds the substrate. The partition has a plurality of through holes which allow the first and second spaces to communicate with each other. The through holes are covered with a covering material having a recombination coefficient higher than that of the conductive material. | 02-18-2010 |
