Patent application number | Description | Published |
20090146716 | Timing control circuit, timing generation system, timing control method and semiconductor memory device - A timing control circuit DLY | 06-11-2009 |
20100073999 | SEMICONDUCTOR INTEGRATED CIRCUIT - In a readout circuit (RC) which detects a difference between a change that appears on a first signal line (CBL) and a change that appears on a second signal line (CBLdm) according to stored information of each selected memory cell, the first signal line and the second signal line are separated selectively from input nodes of a data latch circuit (DL) through second MOS transistors (MN | 03-25-2010 |
20110292709 | SEMICONDUCTOR DEVICE - A semiconductor device includes a sense amplifier circuit. The sense amplifier circuit includes a cross-coupled first transistor and second transistor that perform amplification. The sources of the cross-coupled transistors are respectively connected in series with a third transistor and a fourth transistor, and electrical current supply capability of the third and fourth transistors is controlled by a control voltage given to control electrodes of the third and fourth transistors. In a data retaining period, a minimum sub-threshold current necessary for retaining the data is flowed to the third and fourth transistors according to the control voltage, and bit line potential is maintained. | 12-01-2011 |
20120249180 | SEMICONDUCTOR DEVICE - A device is disclosed herein, which may be used a level-shift circuit. The device includes first, second and third power supply lines supplied respectively with first, second and third power voltages that are different from one another, first and second input terminals and an output terminal, an output circuit coupled to the first power supply line, the first and second input terminals and the output terminal, a first inverter including an input node coupled to the first input terminal and an output node coupled to the second input terminal, a first transistor coupled in series to the first inverter between the second and third power supply lines, the fifth transistor being rendered non-conductive to deactivate the first inverter, and a control circuit configured to prevent the output terminal from being brought into an electrical floating state during deactivation of the first inverter. | 10-04-2012 |
20120267792 | SEMICONDUCTOR DEVICE - A stacked device includes a plurality of semiconductor chips connected to each other by through electrodes. The same number of through electrodes are included in each of paths extending from a first power source terminal through each of circuit elements formed for the semiconductor chips to a second power source terminal. | 10-25-2012 |
20130258793 | SEMICONDUCTOR DEVICE - A semiconductor device includes a sense amplifier circuit. The sense amplifier circuit includes a cross-coupled first transistor and second transistor that perform amplification. The sources of the cross-coupled transistors are respectively connected in series with a third transistor and a fourth transistor, and electrical current supply capability of the third and fourth transistors is controlled by a control voltage given to control electrodes of the third and fourth transistors. In a data retaining period, a minimum sub-threshold current necessary for retaining the data is flowed to the third and fourth transistors according to the control voltage, and bit line potential is maintained. | 10-03-2013 |
20130292630 | SEMICONDUCTOR MEMORY DEVICE - The technical problem to be solved is to achieve high density with simple manufacturing process to decrease bit costs of memory. | 11-07-2013 |
20130322188 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device that detects an operation error of an SRAM caused by a device variation fluctuating with time is provided. In the SRAM, a memory cell has a transfer MOS transistor whose gate is connected to a word line. At the time of a write test of the memory cell, a control circuit including a test/normal operation selection circuit and a word line driver circuit applies a third voltage to the word line in a preparation period before writing test data, thereafter a first voltage to the word line, and a second voltage to the word line at the end of writing. Due to this, the threshold voltage of the transfer MOS transistor, which fluctuates with time, can be controlled. Therefore, it is possible to enhance detection efficiency for a malfunctioning cell of the SRAM due to a temporal variation. | 12-05-2013 |