| Patent application number | Description | Published |
|---|
| 20090002084 | Oscillator - In an oscillator of the present invention, each of field-effect transistors ( | 01-01-2009 |
| 20090139369 | BICYCLE PEDAL - A bicycle pedal is provided with a pedal body having a front cleat retainer and a rear cleat retainer. The rear cleat retainer is pivotally coupled to the pedal body about a rear pivot axis. The front cleat retainer has a forward cleat stopping point facing towards the rear end of the pedal body. The rear cleat retainer has a rear cleat step-in point facing away from the pedal body. The forward and rear cleat stopping points and the rear pivot axis define a triangle with a first side interconnecting the forward and rear cleat stopping points, a second side interconnecting the rear cleat step-in point and the rear pivot axis, and a third side interconnecting the forward cleat stopping point and the rear pivot axis, with an interior angle of ninety degrees or less between the first and second sides of the triangle. | 06-04-2009 |
| 20110083530 | BICYCLE PEDAL - A bicycle pedal has a pedal spindle, a pedal body and a step-in cleat engagement structure. The pedal body includes a tubular mounting portion rotatably mounted on the pedal spindle. The tubular mounting portion includes a center tube section that has a widthwise dimension and a lengthwise dimension as measured from the center spindle axis to an outside surface of the center tube section along reference planes that are substantially perpendicular to each other. The widthwise dimension is substantially perpendicular to a cleat pedaling force direction applied to the pedal spindle, as viewed along in a direction of the center spindle axis. The outside surface of the center tube section has an overall transverse cross sectional shape that includes a generally convex arc that extends a majority of the outside surface of the center tube section on a side of the reference plane that faces the cleat engagement structure. | 04-14-2011 |
| 20110159667 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S | 06-30-2011 |
| 20110179993 | CRYSTAL GROWTH PROCESS FOR NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including an m-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber, whereby an m-plane nitride semiconductor crystal having a smooth surface can be formed even if the thickness of the layer is 400 nm, and its growth time can be greatly decreased. | 07-28-2011 |
| 20110198568 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCTION THEREOF - A light-emitting apparatus of the present invention includes: a mounting base | 08-18-2011 |
| 20110297956 | METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an In | 12-08-2011 |
| 20120001223 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor light-emitting device | 01-05-2012 |
| 20120002134 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ILLUMINATING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING ILLUMINATING DEVICE - An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure | 01-05-2012 |
