Patent application number | Description | Published |
20090002084 | Oscillator - In an oscillator of the present invention, each of field-effect transistors ( | 01-01-2009 |
20090139369 | BICYCLE PEDAL - A bicycle pedal is provided with a pedal body having a front cleat retainer and a rear cleat retainer. The rear cleat retainer is pivotally coupled to the pedal body about a rear pivot axis. The front cleat retainer has a forward cleat stopping point facing towards the rear end of the pedal body. The rear cleat retainer has a rear cleat step-in point facing away from the pedal body. The forward and rear cleat stopping points and the rear pivot axis define a triangle with a first side interconnecting the forward and rear cleat stopping points, a second side interconnecting the rear cleat step-in point and the rear pivot axis, and a third side interconnecting the forward cleat stopping point and the rear pivot axis, with an interior angle of ninety degrees or less between the first and second sides of the triangle. | 06-04-2009 |
20110083530 | BICYCLE PEDAL - A bicycle pedal has a pedal spindle, a pedal body and a step-in cleat engagement structure. The pedal body includes a tubular mounting portion rotatably mounted on the pedal spindle. The tubular mounting portion includes a center tube section that has a widthwise dimension and a lengthwise dimension as measured from the center spindle axis to an outside surface of the center tube section along reference planes that are substantially perpendicular to each other. The widthwise dimension is substantially perpendicular to a cleat pedaling force direction applied to the pedal spindle, as viewed along in a direction of the center spindle axis. The outside surface of the center tube section has an overall transverse cross sectional shape that includes a generally convex arc that extends a majority of the outside surface of the center tube section on a side of the reference plane that faces the cleat engagement structure. | 04-14-2011 |
20110159667 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S | 06-30-2011 |
20110179993 | CRYSTAL GROWTH PROCESS FOR NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including an m-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber, whereby an m-plane nitride semiconductor crystal having a smooth surface can be formed even if the thickness of the layer is 400 nm, and its growth time can be greatly decreased. | 07-28-2011 |
20110198568 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCTION THEREOF - A light-emitting apparatus of the present invention includes: a mounting base | 08-18-2011 |
20110297956 | METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an In | 12-08-2011 |
20120001223 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor light-emitting device | 01-05-2012 |
20120002134 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ILLUMINATING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING ILLUMINATING DEVICE - An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure | 01-05-2012 |
20120021549 | METHOD FOR GROWING CRYSTALS OF NITRIDE SEMICONDUCTOR, AND PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICE - A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a −r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber. | 01-26-2012 |
20120091490 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Provided is a light-emitting device including: a nitride semiconductor light-emitting element ( | 04-19-2012 |
20120125147 | BICYCLE PEDAL - A bicycle pedal is provided with a pedal spindle, a pedal body, a cleat engagement member and an actuation member. The pedal body is rotatably mounted on the pedal spindle. The cleat engagement member is movably mounted relative to the pedal body between a release position and an engagement position. The cleat engagement member is biased towards the release position. The actuation member is mechanically connected to the cleat engagement member. The actuation member is movably mounted relative to the pedal body from a first position to a second position such that the actuation member moves the cleat engagement member from the release position to the engagement position. | 05-24-2012 |
20120125148 | BICYCLE PEDAL - A bicycle pedal is provided with a pedal spindle, a pedal body, a first cleat engagement member and a positioning member. The pedal body is rotatably mounted on the pedal spindle. The cleat engagement member is movably mounted to the pedal body between a release position and an engagement position. The positioning member is movably coupled relative to the pedal body between a first position and a second position. The positioning member moves the first cleat engagement member to the release position while the positioning member is moving from the second position to the first position. The positioning member moves the first cleat engagement member to the engagement position while the positioning member is moving from the first position to the second position. | 05-24-2012 |
20120146048 | GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - Provided is a gallium nitride-based compound semiconductor light-emitting element, in which the concentration of Mg which is a p-type dopant in a p-GaN layer in which the (10-10) m-plane of a hexagonal wurtzite structure grows is adjusted in a range from 1.0×10 | 06-14-2012 |
20120182495 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHTING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR PRODUCING LIGHTING DEVICE - An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicnknesses of d | 07-19-2012 |
20120235948 | LIQUID CRYSTAL DEVICE - Disclosed is a liquid crystal device having improved assembly workability. A liquid crystal device of the present invention is provided with: a liquid crystal panel | 09-20-2012 |
20120244686 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - An exemplary method for fabricating a semiconductor device includes the steps (a) growing a p-type gallium nitride-based compound semiconductor layer in a heated atmosphere; (b) cooling the p-type gallium nitride-based compound semiconductor layer; (c) forming three or more well layers before the step (a); and (d) forming an n-type semiconductor layer on a substrate before the step (c), wherein the step (c) includes growing each of the well layers to a thickness of 5 nm or more with the supply of the hydrogen gas to the reaction chamber cut off, and wherein the step (a) includes supplying hydrogen gas to the reaction chamber, and wherein the step (b) includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off. | 09-27-2012 |
20130025404 | BICYCLE PEDAL - A bicycle pedal comprises a pedal axle, a main pedal body, a coupling mechanism and a cleat movement restricting member. The main pedal body is rotatably supported on the pedal axle. The coupling mechanism includes a first cleat securing member and a second cleat securing member. The first cleat securing member is configured to be coupled to a front portion of a cleat. The second cleat securing member is configured to be coupled a rear portion of the cleat. The cleat movement restricting member is configured to restrict movement of the cleat in at least one direction between a frontward direction and a rearward direction. The cleat movement restricting member is further configured and arranged relative to the coupling mechanism such that the cleat movement restricting member guides the cleat during a cleat disengagement operation in which the cleat detaches from the coupling mechanism. | 01-31-2013 |
20130126900 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Around a nitride-based semiconductor light-emitting element which has a polarization characteristic, a transparent encapsulating member which has a cylindrical shape is provided such that the symmetry plane of the cylindrical shape forms an angle of 25° to 65° with respect to the polarization direction of the nitride-based semiconductor light-emitting element. | 05-23-2013 |
20130126901 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer | 05-23-2013 |
20130126902 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer | 05-23-2013 |
20130146928 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting element | 06-13-2013 |
20130175566 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element includes a substrate and a nitride semiconductor multilayer structure. The nitride semiconductor multilayer structure includes a nitride semiconductor active layer which emits polarized light. Angle θ, which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, is greater than 90°. Angle θ | 07-11-2013 |
20130207150 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device of the present disclosure includes: a semiconductor multilayer structure which includes an active layer that is made of a nitride semiconductor, a principal surface of the nitride semiconductor being a semi-polar plane or a non-polar plane and which has recessed/elevated surfaces including at least either of recessed portions and elevated portions; an electrode covering a side of the semiconductor multilayer structure at which the recessed/elevated surfaces is provided, the electrode being configured to reflect at least part of light emitted from the active layer; and a birefringent substrate provided on a side of the semiconductor multilayer structure which is opposite to the recessed/elevated surfaces, the birefringent substrate being configured to transmit light emitted from the active layer and light reflected by the electrode. | 08-15-2013 |
20130214288 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10 | 08-22-2013 |
20130234179 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element disclosed in the present application includes: an active layer having a growing plane which is an m-plane and which is made of a GaN-based semiconductor; and at least one radiation surface at which light from the active layer is to be radiated. The radiation surface has a plurality of protrusions on the m-plane. A base of each of the plurality of protrusions is a region inside a closed curve, and a shape of the base has a major axis and a minor axis. An angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45°. | 09-12-2013 |
20130240942 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting chip including a nitride semiconductor active layer having a nonpolar plane as a growth surface is configured such that when regions of a surface of a mounting substrate illuminated with light from the active layer and located laterally outward from the chip along a crystal axis that is parallel to the active layer and perpendicular to a polarization direction from the active layer are high polarization regions, and regions of the surface of the substrate illuminated with the light from the active layer except the high polarization regions are low polarization regions, metal is placed on a portion of the high polarization regions, and the proportion of mirror reflection from a portion of the low polarization regions is lower than that from the metal, and the proportion of mirror reflection from the high polarization regions is higher than that from the low polarization regions. | 09-19-2013 |
20130248877 | GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT SOURCE, AND METHOD FOR FORMING UNEVENNESS STRUCTURE - The light extraction surface of a nitride semiconductor light-emitting element, including a crystal plane other than a c plane, is subjected to a surface modification process to control its wettability, and then covered with a layer of fine particles. By etching that layer of fine particles after that, an unevenness structure, in which roughness curve elements have an average length (RSm) of 150 nm to 800 nm, is formed on the light extraction surface. | 09-26-2013 |
20130270574 | NITRIDE-BASED SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor element according to an embodiment of the present disclosure includes: a p-type contact layer, of which the growing plane is an m plane; and an electrode which is arranged on the growing plane of the p-type contact layer. The p-type contact layer is a GaN-based semiconductor layer which has a thickness of 26 nm to 60 nm and which includes oxygen at a concentration that is equal to or higher than Mg concentration of the p-type contact layer. In the p-type contact layer, the number of Ga vacancies is larger than the number of N vacancies. | 10-17-2013 |
20130334986 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LED SYSTEM - A nitride semiconductor light emitting element includes a light emitting layer. The light emitting layer includes an In | 12-19-2013 |
20140034961 | SURFACE-MODIFIED SEMICONDUCTOR, METHOD OF MAKING THE SEMICONDUCTOR, AND METHOD OF ARRANGING PARTICLES - The terminating layer that covers the top layer of a GaN-based semiconductor having a principal surface which is either a non-polar plane or a semi-polar plane, is removed by performing an organic solvent cleaning process step, and replaced with an organic solvent cleaned layer. Next, by irradiating the semiconductor with an ultraviolet ray, the organic solvent cleaned layer is removed to form a surface-modified layer instead. By performing these process steps, the top layer of the GaN-based semiconductor becomes the surface-modified layer and an electrical polarity is given to the surface of the GaN-based semiconductor. As a result, the hydrophilicity, hydrophobicity and wettability of the GaN-based semiconductor can be controlled. | 02-06-2014 |
20140042456 | NITRIDE SEMICONDUCTOR LIGHT EMITTING CHIP, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting chip includes: a conductive substrate including a nitride semiconductor layer; an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer sequentially formed on a principal surface of the nitride semiconductor layer; and an n-side electrode formed in contact with the conductive substrate. A recess is formed in a back surface of the conductive substrate opposite to the principal surface. The n-side electrode is in contact with at least part of a surface of the recess. A depth D1 is not less than 25% of a thickness T, where T represents a thickness of the conductive substrate, and D1 represents a depth of the recess. | 02-13-2014 |
20140042468 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor chip having a growth surface that is a nonpolar or semipolar plane, and emitting polarized light; and a reflector having a reflective surface. At least part of light in a plane L | 02-13-2014 |
20140048821 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting chip including an active layer for outputting polarized light, the active layer having a non-polar plane or a semi-polar plane as a growth plane; and a light-transmissive cover for transmitting light from the active layer. The light-transmissive cover includes a first light-transmissive member located in an area, among areas to the side of the nitride semiconductor light-emitting chip, and in a direction perpendicular to a polarization direction of the polarized light, and a second light-transmissive member located in an area above the nitride semiconductor light-emitting chip. The first light-transmissive member has a higher diffuse transmittance than the second light-transmissive member. | 02-20-2014 |
20140048827 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes: a semiconductor chip having a growth surface that is a nonpolar or semipolar plane, and emitting polarized light; and a reflector having a reflective surface. At least part of light in a plane L | 02-20-2014 |
20140054623 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes: a semiconductor chip having a nonpolar plane as a growth surface and configured to emit polarized light; and a reflector having a reflective surface. When a plane forming an angle of 45° relative to a direction of polarization of the polarized light is a plane L | 02-27-2014 |
20140070255 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device includes: a semiconductor light-emitting chip held on a mounting surface of a mounting substrate, having a growth surface that is a nonpolar or semipolar plane, and emitting polarized light; a reflector surrounding the semiconductor light-emitting chip when viewed in plan and having a reflective surface off which the polarized light is reflected; and a coupler held on the mounting surface of the mounting substrate and holding the reflector such that the reflector is rotatable around the semiconductor light-emitting chip. | 03-13-2014 |
20140077223 | STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME - A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°. | 03-20-2014 |
20140110747 | LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE - Disclosed is a light-emitting diode element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, an active layer. A first electrode is provided on a surface of the second semiconductor layer. A second electrode is provided in a second region of the principal surface of the first semiconductor layer. A conductive layer is arranged such that the conductive layer covers a third region, a fourth region, and a fifth region in the rear surface of the first semiconductor layer. In the rear surface of the first semiconductor layer, the first semiconductor layer includes a sixth region which is not covered with the conductive layer and which overlaps another part of the first electrode. The first semiconductor layer is not provided with a through electrode. | 04-24-2014 |
20140116200 | BICYCLE PEDAL - A bicycle pedal includes a pedal axle, a main pedal body, a first cleat securing member and a first biasing member. The main pedal body is rotatably supported on the pedal axle. The first cleat securing member is pivotally coupled relative to the main pedal body about a first pivot axis between a clamping position and a release position. The first biasing member biases the first cleat securing member toward the clamping position. The first biasing member is supported on the main pedal body at a distance farther from a center longitudinal axis of the pedal axle than the first pivot axis. | 05-01-2014 |
20140124816 | STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME - A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°. | 05-08-2014 |
20140217423 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR FORMING RECESSES OF THE SAME, AND LIGHT SOURCE APPARATUS USING THE SAME - A semiconductor light-emitting device made of a nitride-based semiconductor includes a semiconductor stacked structure having a nonpolar plane or a semipolar plane as a principal plane, and including an active layer for emitting polarized light. The semiconductor light-emitting device includes a striped structure which is provided in a position intersecting an exit path of the polarized light and includes a plurality of recesses. An angle formed between the extension direction of the recesses and the polarization direction of the polarized light is from 0° to 45°. The recesses have a minute uneven structure (texture) at at least part of a surface of each recess, the minute uneven structure being shallower than the depth of each recess. | 08-07-2014 |
20140235886 | PHOSPHORUS-BASED (METH)ACRYLATE COMPOUND AND METHOD OF PREPARING THE SAME - This invention relates to a novel compound having high refractive index suitable for use in optical resin materials, etc., without containing a sulfur atom, and to a method of preparing the same, in which the compound is a phosphorus-based (meth)acrylate compound represented by Formula (I). | 08-21-2014 |
20140264372 | STRUCTURE AND MANUFACTURING METHOD OF THE STRUCTURE, AND GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE STRUCTURE AND MANUFACTURING METHOD OF THE DEVICE - In a structure including a gallium nitride-based semiconductor having an m-plane as a principal plane, and a metal layer provided on the principal plane, the principal plane has an n-type conductivity. An interface between the gallium nitride-based semiconductor and the metal layer contains oxygen. The metal layer includes a crystal grain extending form a lower surface to an upper surface of the metal layer. | 09-18-2014 |
20140311282 | BICYCLE PEDAL - A bicycle pedal includes a pedal axle, a rotatable main pedal body, a first cleat securing member pivotally coupled about a first pivot axis between first and second positions, a sub member pivotally coupled to move about a second pivot axis, and at least a first biasing member disposed on the second pivot axis. The second pivot axis is farther from the pedal axle than the first pivot axis. The first biasing member is operatively disposed between the main pedal body and the first cleat securing member to bias the first cleat securing member toward the first position. The first cleat securing member and the sub member rotate together about the second pivot axis until the sub member abuts against the main pedal body, and the first cleat securing member subsequently rotates toward the second position about the first pivot axis independently from the sub member during a step-in operation. | 10-23-2014 |
20140353699 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - Provided is a nitride semiconductor light-emitting diode having a higher light extraction efficiency and a higher polarization degree. A nitride semiconductor light-emitting diode according to the present invention comprises an active layer generating a polarized light, a first side surface, a second side surface, a third side surface, and a fourth side surface. The first and second side surfaces consist only of a plane including the Z-axis and the Y-axis. The third and fourth side surfaces are perpendicular to the first and second side surfaces and include the X-axis. The third and fourth side surfaces include an inclined surface. | 12-04-2014 |
20140370685 | METHOD FOR FORMING A GROOVE ON A SURFACE OF FLAT PLATE FORMED OF A NITRIDE SEMICONDUCTOR CRYSTAL - Provided is a novel method for forming a groove composed of two smooth inclined surfaces on a surface of a flat plate formed of a nitride semiconductor crystal having an A, C, M-axes. In the present invention, a disk-shaped dicing blade is moved along a direction of the A-axis to form first and second inclined surfaces on the surface of the flat plate. The following mathematical formulae (I)-(III) are satisfied: 45 degrees≦θb−a≦60 degrees (I) 45 degrees≦θb+a≦60 degrees (II), 0 degrees≦|a|≦7.5 degrees, where angle θb represents an angle formed between a surface of the edge and a radial direction of the dicing blade in a cross-sectional view which includes the M-axis and the C-axis. The angle a represents an angle formed between the principal surface and the M-axis. | 12-18-2014 |
20150051718 | BICYCLE FITTING SYSTEM - A bicycle fitting system includes a controller programmed to determine whether a current rider position of a rider is appropriate based on a flexibility level of a rider body of the rider. | 02-19-2015 |
20150162495 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting element | 06-11-2015 |
20150287882 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied: | 10-08-2015 |
20150333215 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - Provided is a nitride semiconductor light-emitting diode in which efficiency in a low current density is prevented from being decreased. The nitride semiconductor light-emitting diode comprises a second n-type nitride semiconductor layer. An active layer has a principal surface of an m-plane having an off angle of not less than 0 degrees and not more than 15 degrees. Either of the following requirement (A) and (B) is satisfied; (A) the second n-type nitride semiconductor layer has a donor impurity concentration of not less than 3.0×10 | 11-19-2015 |
20150357522 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied: | 12-10-2015 |