| Patent application number | Description | Published |
|---|
| 20080206899 | Method of manufacturing semiconductor device using electrochemical deposition with electric current revised by reflectance of every substrate surface and semiconductor manufacturing apparatus - A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter. | 08-28-2008 |
| 20080283404 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE TO DECREASE DEFECT NUMBER OF PLATING FILM - A method for manufacturing a semiconductor device is provided which includes performing an electroplating step to fill concavities formed on a substrate. The electroplating step further includes: performing a first electroplating step; performing a first reverse bias step; performing a second electroplating step; performing a second reverse bias step; and a third electroplating step. The polarity of the first and the second reverse bias steps is different from that of the first electroplating step. A difference between the third current density and the fourth current density is larger than a difference between the first current density and the second current density. | 11-20-2008 |
| 20080293247 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An object of the invention is to provide a semiconductor device which includes a barrier metal having high adhesiveness and diffusion barrier properties and a method of manufacturing the semiconductor device. The invention provides a semiconductor device manufacturing method including forming a first layer made of a material containing silicon on a base substance; forming a second layer containing metal and nitrogen on the first layer; and exposing the second layer to active species obtained from plasma in an atmosphere including reducing gas. | 11-27-2008 |
| 20090242409 | PLATING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PLATE PROCESSING SYSTEM - A plating film is formed by the steps of applying a direct current between a cathode and an anode (S | 10-01-2009 |
| 20100127404 | SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device, insulation resistance of the porous film is stabilized, and leakage current between adjacent interconnects provides an improved reliability in signal propagation therethrough. The method includes: sequentially forming over a semiconductor substrate a porous film and a patterned resist film; forming a concave exposed surface of the substrate; forming a non-porous film covering the interior wall of the concave portion and the porous film; selectively removing the non-porous film from the bottom of the concave portion and the non-porous film by anisotropic etch; forming a barrier metal film covering the porous film and the interior wall; and forming a metallic film on the barrier metal film to fill the concave portion. The anisotropic etch process uses an etching gas with mixing ratio MR, 45≦MR≦100, where MR=((gaseous “nitrogen” containing compound)+(inert gas))/(gaseous “fluorine” containing compound). | 05-27-2010 |
| 20100210102 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - Aimed at improving adhesiveness between upper and lower interconnects in semiconductor devices, a semiconductor device of the present invention includes a second dielectric multi-layered film formed on a substrate, and containing a lower interconnect; a first dielectric multi-layered film formed on the second dielectric multi-layered film, and having a recess; an MOx film formed on the inner wall of the recess, and containing a metal M and oxygen as major components; an M film formed on the MOx film, and containing the M as a major component; and an electric conductor formed on the M film so as to fill the recess, and containing Cu as a major component, wherein the surficial portion of the interconnect fallen straight under the bottom of the recess has an oxygen concentration of 1% or smaller. | 08-19-2010 |
| 20110079909 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A generation of a void in a recessed section is inhibited. A method for manufacturing a semiconductor device includes: an operation of forming recessed sections in an insulating film, which is formed on a semiconductor substrate; an operation of forming a seed film in the recessed section; an operation of forming a cover metal film in the recessed section; an operation of selectively removing the cover metal film to expose the seed film over the bottom section of the recessed section; and an operation to carrying out a growth of a plated film to fill the recessed section by utilizing the seed film exposed in the bottom section of the recessed section as a seed. | 04-07-2011 |
| 20110155578 | PLATING PROCESS AND MANUFACTURING PROCESS FOR SEMICONDUCTOR DEVICE THEREBY - An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: step | 06-30-2011 |
