Patent application number | Description | Published |
20100247412 | Method for Removal of CIO3F - [Object] An object of the present invention is to provide an inexpensive method for removing ClO | 09-30-2010 |
20110008242 | Method for Producing Oxygen-Containing Halogenated Fluoride - Disclosed is a method for producing an oxygen-containing halogenated fluoride, wherein a gas-liquid reaction is used. This method is a method for producing an oxygen-containing halogenated fluoride represented by the general formula: XO | 01-13-2011 |
20110150747 | Method for Manufacturing Oxygen-Containing Halogenated Fluoride - According to the present invention, there is provided a method for manufacturing an oxygen-containing halogenated fluoride of the general formula: XO | 06-23-2011 |
20120006487 | System for In-Situ Mixing and Diluting Fluorine Gas - [Task] It is a task to provide a fluorine gas supply system which can stably supply fluorine gas generated by a fluorine gas generation device to a semiconductor processing device in a large quantity and in a precise concentration. | 01-12-2012 |
20140199852 | PATTERN FORMING METHOD - A pattern forming method is provided for forming a pattern of a multilayer film including insulative films and electrically conductive films stacked together and having a hole formed therein on a substrate with the electrically conductive film being selectively accurately indented from an inner peripheral surface of the hole. The pattern forming method includes the steps of: alternately stacking at least two insulative films and at least two polysilicon films on a substrate to form a multilayer film including the at least two insulative films and the at least two polysilicon films; forming a hole extending through the at least two insulative films and the at least two polysilicon films in the multilayer film; and selectively etching the polysilicon films from a side wall of the hole through isotropic etching by feeding into the hole an etching gas prepared by diluting fluorine-containing halogen gas with an inert gas. | 07-17-2014 |
Patent application number | Description | Published |
20120298911 | Dry Etching Agent and Dry Etching Method Using the Same - A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF | 11-29-2012 |
20120322158 | Method and Device for Measuring Water Content in Hydrogen Fluoride-Containing Compound - The present invention provide a water content measurement method for a hydrogen fluoride-containing compound represented by the general formula: XF.nHF (where X is either one of K, NH | 12-20-2012 |
20130105728 | Dry Etching Agent and Dry Etching Method | 05-02-2013 |
20130341202 | Method for Synthesizing Fluorine Compound by Electrolysis and Electrode Therefor - Disclosed is an electrode for electrolytic synthesis of a fluorine compound, including: an electrode substrate having at least a surface thereof formed of a conductive carbon material; a conducting diamond layer formed on a part of the surface of the electrode substrate; and a metal fluoride-containing coating layer formed on an exposed part of the electrode substrate that is uncovered by the conducting diamond layer. It is possible for the electrolytic synthesis electrode to limit the growth of a graphite fluoride layer on the electrode surface, prevent decrease in effective electrolysis area and allow stable electrolysis in an electrolytic bath of a hydrogen fluoride-containing molten salt. | 12-26-2013 |
20140242803 | Dry Etching Agent and Dry Etching Method Using the Same - A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF | 08-28-2014 |
20140302683 | DRY ETCHING AGENT - The invention is directed to providing a dry etching agent having little effect on the global environment but having the required performance. Provided is a dry etching agent containing, each at a specific vol %: (A) a fluorine-containing unsaturated hydrocarbon represented by the formula C | 10-09-2014 |
20150292092 | Gas Generation Device - Disclosed is a gas generation device | 10-15-2015 |
20160005612 | Silicon Dry Etching Method - A dry etching method according to the present invention is for etching a silicon layer as a processing target in a processing room, characterized by supplying an iodine heptafluoride-containing etching gas from a gas supply source at a supply pressure of 66 kPa to 0.5 MPa, evacuating the processing room to an internal pressure lower than the supply pressure of the etching gas and, while maintaining the etching gas at the supply pressure, introducing the etching gas into the evacuated processing room so as to etch the silicon layer by the etching gas. It is possible by this dry etching method to etch the silicon upon adiabatic expansion of the etching gas under mild pressure conditions, with no fear of equipment load and equipment cost increase, and achieve good uniformity of in-plane etching amount distribution. | 01-07-2016 |