Patent application number | Description | Published |
20080286661 | Photomask, Photomask Fabrication Method, Pattern Formation Method Using the Photomask and Mask Data Creation Method - A mask pattern including a light-shielding portion | 11-20-2008 |
20090019419 | Method for forming LSI pattern - First, multiple circuit patterns, which will eventually make an LSI, are designed on a cell-by-cell basis, and an initial placement is made for the circuit patterns designed. Next, optical proximity corrections are performed on at least two of the circuit patterns that have been initially placed to be adjacent to or cross each other, thereby forming optical proximity corrected patterns out of the adjacent or crossing circuit patterns. Then, it is determined whether or not optical proximity corrections can be performed effectively using the corrected patterns. If the effectiveness of the corrections is negated, a design rule defining the circuit patterns is changed to make the corrections effective. Thereafter, the initially placed circuit patterns are placed again in accordance with the design rule changed. | 01-15-2009 |
20090061328 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes a transparent substrate having a transparent property against exposing light and a halftone portion formed on the transparent substrate. In the halftone portion, a first opening having a first dimension and a second opening having a second dimension larger than the first dimension are formed. A light-shielding portion is formed on the transparent substrate to be disposed around the second opening. | 03-05-2009 |
20090061330 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening. | 03-05-2009 |
20090075182 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through. | 03-19-2009 |
20090208851 | Photomask, Fabrication Method for the Same and Pattern Formation Method Using the Same - A mask pattern including, for example, a light-shielding portion | 08-20-2009 |
20110136048 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through. | 06-09-2011 |
20110262849 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening. | 10-27-2011 |
20110272815 | SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD FOR THE SAME - A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features. | 11-10-2011 |
20110278679 | SEMICONDUCTOR DEVICE, MASK FOR FABRICATION OF SEMICONDUCTOR DEVICE, AND OPTICAL PROXIMITY CORRECTION METHOD - A semiconductor device includes a circuit portion including at least one real feature, and a plurality of dummy feature groups each including a plurality of dummy features spaced apart from each other by a first distance. The plurality of dummy feature groups are spaced apart from each other by a second distance larger than the first distance, and the circuit portion and the plurality of dummy feature groups are spaced apart from each other by the second distance. | 11-17-2011 |