| Patent application number | Description | Published |
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| 20090315071 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor device 10 includes forming a plurality of second conductive second semiconductor regions at specific intervals on one main surface of a first conductive first semiconductor region, the plurality of second conductive second semiconductor regions being opposite to the first conductive first semiconductor region, forming a plurality of the first conductive third semiconductor regions on a main surface of the second semiconductor region, the plurality of the first conductive third regions being separated from each other, forming a plurality of holes at specific intervals on an another main surface which faces the one main surface of the first semiconductor region, the plurality of holes being separated from each other, forming a pair of adjacent second conductive fourth semiconductor regions which are alternately connected at a bottom part of the hole within the first semiconductor region, and burying an electrode within the hole. | 12-24-2009 |
| 20100155780 | SEMICONDUCTOR DEVICE - An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode. | 06-24-2010 |
| 20110089980 | CAPACITIVE LOAD DRIVER - A capacitive load driver includes a first switching element whose first end receives positive potential, an EL element arranged between a second end of the first switching element and the ground, a charge collecting capacitor whose first end is connected to a positive electrode terminal of the EL element, a voltage source connected between a second end of the charge collecting capacitor and the ground, and a controller. The controller charges a parasitic capacitance of the EL element and the charge collecting capacitor, and thereafter, applies negative potential from the voltage source to the second end of the charge collecting capacitor. Thereafter, the controller brings the output voltage of the voltage source to ground potential so that the charge collecting capacitor is discharged to charge the EL element. The capacitance of the charge collecting capacitor is set to be sufficiently greater than that of the parasitic capacitance. | 04-21-2011 |
| 20110204488 | SEMICONDUCTOR WAFER AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes preparing a semiconductor wafer including a silicon substrate and a laminate having a compound semiconductor layer; etching and removing a part of the laminate in a thickness direction to form trench regions in a grid, each trench region including a plurality of stripe grooves extending in parallel to each other; filling the groove with a material having a lower hardness than the compound semiconductor layer to form a buried region; and dividing the semiconductor wafer into a plurality of chips by dicing using a blade at a dicing line which is defined within the trench region and includes a plurality of the buried regions. | 08-25-2011 |
| 20110254056 | SEMICONDUCTOR DEVICE HAVING TRANSISTOR AND RECTIFIER - A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main electrode arranged on the other end of the current path; an auxiliary electrode arranged in a region of the current path between the first main electrode and the second main electrode; a third main electrode arranged on the one end of the current path apart from the first main electrode along a direction intersecting the current path; and a control electrode arranged in a region of the current path between the second main electrode and the third main electrode. The transistor includes the current path, the second main electrode, the third main electrode, and the control electrode. The rectifier includes the current path, the first main electrode, the second main electrode, and the auxiliary electrode. | 10-20-2011 |
| Patent application number | Description | Published |
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| 20090045851 | DEVICE FOR DRIVING SWITCHING ELEMENTS - A device for driving switching elements is provided with a potential detector | 02-19-2009 |
| 20090052216 | LEVEL SHIFT CIRCUIT AND POWER SUPPLY DEVICE - In a level shift circuit including: an inverter circuit having a series circuit of a Pch-type transistor and an Nch-type transistor, which re connected between electrodes of a floating power supply; and a transistor Q | 02-26-2009 |
| 20090167411 | NORMALLY-OFF ELECTRONIC SWITCHING DEVICE - A device capable of bidirectional on-off switching control of an electric circuit. Included is a normally-on HEMT connected between a pair of terminals of the device. A normally-off MOSFET of relatively low antivoltage strength is connected between the HEMT and one of the pair of terminals, and another similar MOSFET between the HEMT and the other of the terminal pair. A diode is connected in inverse parallel with each MOSFET, and two other diodes are connected between the gate of the HEMT and the pair of terminals respectively. The switching device as a whole is normally off. | 07-02-2009 |
| 20100052648 | DRIVE CIRCUIT - A drive circuit for a switching circuit has a high-side drive circuit to turn on/off, according to a control signal, a switching element QH arranged on a high side of a DC power source Vin and a low-side drive circuit to turn on/off alternately with the switching element QH according to the control signal a switching element QL arranged on a low side of the DC power source and connected in series with the switching element QH. Ends of an auxiliary power source Vcc | 03-04-2010 |
| 20100155781 | MONOLITHIC INTEGRATED CIRCUIT OF A FIELD-EFFECT SEMICONDUCTOR DEVICE AND A DIODE - A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate. | 06-24-2010 |
