| Patent application number | Description | Published |
|---|
| 20090166876 | SEMICONDUCTOR DEVICE AND DIE BONDING MATERIAL - In a semiconductor device bonded to a motherboard with a bonding material having a melting point of 200° C. to 230° C., a bonding material | 07-02-2009 |
| 20090242249 | BONDING MATERIAL, ELECTRONIC COMPONENT, BONDING STRUCTURE AND ELECTRONIC DEVICE - A bonding material that has a melting temperature of 270° C. or higher and that does not contain lead is inexpensively provided. An electronic element and an electrode of an electronic component are bonded using a bonding material containing an alloy that contains Bi as the main component and that contains 0.2 to 0.8 wt % Cu and to 0.2 wt % Ge. | 10-01-2009 |
| 20100148367 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a die pad having a surface on which a first solder bonding layer is formed, and made of metal; and a semiconductor element fixed on the first solder bonding layer on the die pad by a solder material made mostly of bismuth. The first solder bonding layer is made of a softer material than the solder material, a recess is formed in a part of the first solder bonding layer by pressing the solder material against the first solder bonding layer, and the solder material partially fills the recess. | 06-17-2010 |
| 20100294550 | BONDING MATERIAL, ELECTRONIC COMPONENT AND BONDED STRUCTURE - A bonding material containing 2 to 10.5% by weight of Cu, 0.02 to 0.2% by weight of Ge and 89.3 to 97.98% by weight of Bi has heat resistance of up to 275° C. and superior wettability, and a bonding material containing 2 to 10.5% by weight of Cu, 0.02 to 0.2% by weight of Ge, 0.02 to 0.11% by weight of Ni and 89.19 to 97.96% by weight of Bi has more superior heat resistance. | 11-25-2010 |
| 20100301481 | JOINT STRUCTURE AND ELECTRONIC COMPONENT - A joint structure joins an electronic element | 12-02-2010 |
| 20110042817 | SOLDER JOINT STRUCTURE, AND JOINING METHOD OF THE SAME | 02-24-2011 |
| 20110108996 | JOINT STRUCTURE, JOINING MATERIAL AND METHOD FOR PRODUCING JOINING MATERIAL - The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint. | 05-12-2011 |
| 20110120769 | SOLDERING MATERIAL AND ELECTRONIC COMPONENT ASSEMBLY - A lead-free solder material is provided, which shows a high thermal fatigue resistance and is able to effectively reduce occurrence of connection failure that would cause a function of a product to stop. | 05-26-2011 |
