Patent application number | Description | Published |
20090098433 | Solid oxide fuel cell and separator - A solid oxide fuel cell is formed by arranging a fuel electrode layer and an air electrode layer on both surfaces of a solid electrolyte, respectively, a fuel electrode current collector and an air electrode current collector outside the fuel electrode layer and the air electrode layer, respectively, and separators outside the fuel electrode current collector and the air electrode current collector. In a first embodiment, a fuel gas and an oxidant gas are supplied from the separators to the fuel electrode layer and the oxidant electrode layer, respectively, through the fuel electrode current collector and the air electrode current collector, respectively. Each separator is formed by laminating a plurality of thin metal plates at least including a thin metal plate in which a first gas discharge opening is arranged in a central part and second gas discharge openings are circularly arranged in a peripheral part, and a thin metal plate with an indented surface. Gases discharged from the separators can be supplied to entire areas of the electrode layers through the current collectors, so that electric power generation can be performed. | 04-16-2009 |
20090169970 | Solid oxide fuel cell and separator - A solid oxide fuel cell is formed by arranging a fuel electrode layer and an air electrode layer on both surfaces of a solid electrolyte, respectively, a fuel electrode current collector and an air electrode current collector outside the fuel electrode layer and the air electrode layer, respectively, and separators ( | 07-02-2009 |
Patent application number | Description | Published |
20080219308 | Quantum cascade laser - A quantum cascade laser is composed of a semiconductor substrate, and an active layer provided on the semiconductor substrate and having a cascade structure formed by multistage-laminating unit laminate structures | 09-11-2008 |
20080219312 | QUANTUM CASCADE LASER DEVICE - In a quantum cascade laser device | 09-11-2008 |
20090052488 | QUANTUM CASCADE LASER ELEMENT - A DFB quantum cascade laser element that can reliably CW-oscillate a single-mode light even at room temperature or a temperature in proximity thereof is provided. In a quantum cascade laser element | 02-26-2009 |
20110024721 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a semiconductor substrate and an active layer which is formed on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures | 02-03-2011 |
20110026556 | QUANTUM CASCADE LASER - A quantum cascade laser is configured to include a semiconductor substrate and an active layer which is provided on the substrate and has a cascade structure formed by multistage-laminating unit laminate structures | 02-03-2011 |
20120219022 | WAVELENGTH-TUNABLE LIGHT SOURCE - A wavelength-tunable light source includes a quantum cascade laser that emits light from a first end and a second end, an optical system that collimates the light emitted from the first end, a first reflecting section on which the light collimated by the optical system is made incident, and a second reflecting section that partially reflects the light emitted from the second end of the quantum cascade laser and transmits the remaining light. The first reflecting section includes a plurality of diffractive gratings whose diffractive properties are different from each other and whose lattice plane directions are variable, and the first reflecting section diffracts a light at a particular wavelength corresponding to the diffractive property and the lattice plane direction of the selected diffractive grating in the direction opposite to the incident direction. | 08-30-2012 |
20130056565 | FINE-PARTICLE DISPERSION LIQUID MANUFACTURING METHOD AND FINE-PARTICLE DISPERSION LIQUID MANUFACTURING APPARATUS - A microparticle dispersion liquid manufacturing apparatus | 03-07-2013 |
20130322479 | QUANTUM CASCADE LASER - A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, the active layer generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, reflection control films including at least one layer of CeO | 12-05-2013 |
20130322480 | QUANTUM CASCADE LASER - A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, CeO | 12-05-2013 |
20140030671 | DENTAL THERAPY APPARATUS - A dental therapy apparatus which enables a dental therapy more surely and less invasively is provided. A dental therapy apparatus ( | 01-30-2014 |
20140199798 | QUANTUM CASCADE LASER MANUFACTURING METHOD - A quantum cascade laser manufacturing method includes: a step of pressing a mother stamper against a resin film having flexibility to make a resin stamper | 07-17-2014 |
20140241392 | QUANTUM CASCADE LASER - A quantum cascade laser | 08-28-2014 |
20150117484 | QUANTUM CASCADE LASER - A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths. | 04-30-2015 |