| Patent application number | Description | Published |
|---|
| 20080217617 | Thin Film Transistor, Wiring Board and Methods of Manufacturing the Same - A gate electrode or a gate wiring of a thin-film transistor has a four-layer structure including an adhesive base layer, a catalyst layer, a wiring metal layer, and a wiring metal anti-diffusion layer which are laminated in this order. With this structure, adhesion and flatness are improved. In this case, the adhesive base layer is formed by a resin having a structure capable of coordinating to a metal. Hence, adhesion with an insulating substrate can be improved. Further, the wiring metal anti-diffusion layer is formed on the wiring metal layer, so that diffusion of a wiring metal can be inhibited. Thus, characteristics of the thin-film transistor can be improved. | 09-11-2008 |
| 20080302406 | Solar Cell Panel - Generally, solar cell panels are black, being inferior in design. An object of the invention is to provide a transparent plate which develops color without lowering power generation efficiency; and a solar cell panel which uses such transparent plate. A solar cell panel according to the invention has a construction such that the solar cell is covered by a transparent plate which is characterized by absorbing infrared light and emitting visible light. Since the transparent plate develops color by using infrared light which does not contribute to power generation, there is obtained a solar cell panel which is superior in the viewpoint of decoration without lowering the power generation efficiency of solar cells. | 12-11-2008 |
| 20080315201 | Apparatus for Producing Electronic Device Such as Display Device, Method of Producing Electronic Device Such as Display Device, and Electronic Device Such as Display Device - An object of the present invention is to reduce an adverse effect of an atmosphere in a heat treatment device used in production of an electronic device, imparted on characteristics of the produced electronic device. To attain the object, an inner surface of the heat treatment device is covered with an oxide passive-state film and bringing the surface roughness of the inner surface to 1 μm or less in terms of a central mean roughness Ra. According to this type of heat treatment device, in curing a heat curable resin, deterioration in the heat curable resin caused by decomposition or dissociation of the heat curable resin, can be reduced. | 12-25-2008 |
| 20090120673 | Multilayer circuit board and electronic device - A multilayered circuit board which is provided with a low-permittivity interlayer insulating film, and which can significantly improve the performance such as signal transmission characteristics of the multilayered circuit board such as a package and a printed board, because the surface in contact with the interlayer insulating film of the circuit board has no unevenness to eliminate the lowering of production yield and the deterioration of high-frequency signal transmission characteristics; and electronic equipment using the circuit board. The multilayered circuit board comprises, mounted on a substrate, plural wiring layers and plural insulating layers positioned between the plural wiring layers, wherein at least part of the plural insulating layers are composed of a porous insulating layer containing at least any of materials selected from a porous material group consisting of porous material, aerogel, porous silica, porous polymer, hollow silica and hollow polymer, and a non-porous insulating layer formed on at least one surface of the porous insulating layer and not containing the porous material group. | 05-14-2009 |
| 20090272721 | Athmosphere-Controlled Bonding Apparatus, Bonding Method, and Electronic Device - In a bonding apparatus for bonding under pressure a pressure-bonding portion, the concentration of water in a pressure-bonding portion atmosphere inside the apparatus is set smaller than that in an atmosphere outside the apparatus, thereby enabling pressure bonding under low-temperature and low-pressure conditions. In this case, the amount of adsorbed water on each surface of a bonding metal terminal and a to-be-bonded metal terminal forming the pressure-bonding portion is set to 1×10 | 11-05-2009 |
| 20100166956 | VAPOR DEPOSITION APPARATUS - It has been found that an organic component is emitted from a member such as a crucible or a gasket constituting an apparatus for vacuum treatment and an element is contaminated with said organic component emitted, and, as a result, members of the apparatus for vacuum treatment are subjected to a treatment for reducing the emission of an organic component. For example, a crucible is made from a material having a reduced catalytic activity to a material for use in the vapor deposition in question and a gasket is used after a treatment for reducing the bleeding of an organic component or is made from a material containing a reduced amount of an organic component. | 07-01-2010 |
| 20110062460 | ORGANIC EL LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - An organic EL light emitting element is provided with a conductive transparent electrode | 03-17-2011 |
| Patent application number | Description | Published |
|---|
| 20080283951 | Semiconductor device and method for manufacturing the same - A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening. | 11-20-2008 |
| 20090200629 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device which includes a semiconductor chip formed with a light-reception area, a spacer, and a transparent substrate. The spacer is bonded to the semiconductor chip via a first adhesive and surrounding the light-reception area. The transparent substrate is bonded to the spacer via a second adhesive and disposed above the light-reception area. A first projection having a predetermined height is formed on a surface of the spacer which is on a side of the semiconductor chip, and the first projection abuts on the semiconductor chip. | 08-13-2009 |
| 20100244270 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A semiconductor device includes: a component substrate of a semiconductor device; electrode pads provided on one surface of the component substrate; a support plate material reinforcing the component substrate; via holes made in the support plate material; a conducting material filled in the via holes; and a joining member interposed between the electrode pads and the conducting material and joining the component substrate and the support plate material. | 09-30-2010 |
| Patent application number | Description | Published |
|---|
| 20080241022 | Reactor for Generating Moisture and Moisture Generating and Feeding Apparatus for Which the Reactor is Employed - A reactor for generating moisture, with which hydrogen and oxygen fed into the reactor contact with a platinum coating catalyst layer to activate reactivity so that hydrogen and oxygen react under conditions of non-combustion, wherein the reactor includes a cooler comprising a heat dissipation body substrate in which a heater insertion hole is made in the center to fix to the outer surface of the reactor structural component on the outlet side and a cooler on the outlet side made up of a plural number of heat dissipation bodies installed vertically in parallel on the part excluding the area where the afore-mentioned heater insertion hole of the heat dissipation body substrate exists, and a part of the heater to heat the reactor is inserted in the heater insertion hole so as to fix to the outer surface of the reactor structural component on the outlet side. | 10-02-2008 |
| 20090020721 | Valve for Vacuum Exhaustion System - The invention provides a valve and a method of operating the valve that makes it possible to reduce the diameter of the vacuum exhaustion pipings to make the facility for the vacuum exhaustion system small, which results in lower costs and shortens vacuum exhaustion time, and also which can prevent corrosion, cloggings, and seal leakages inside the piping system caused by the accumulation of substances produced by the decomposition of gas flowing through the pipings. In particular, in accordance with the present invention, an aluminum passivation is applied on the piping parts, i.e. the valve and others, that are used in the vacuum exhaustion system so as to inhibit gas decomposition caused by temperature rise at the time of baking so that components for reduction in the diameter size in the vacuum exhaustion system are provided. Thus, corrosion, cloggings and seat leakages caused by gas decomposition are prevented. | 01-22-2009 |
| 20090032115 | VACUUM THERMAL INSULATING VALVE - The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S | 02-05-2009 |
| 20090165534 | METHOD AND APPARATUS FOR TESTING LEAKAGE OF PIPE PASSAGE - A method for testing leakage of a pipe passage employs a flow rate of gas used in testing supplied to the inside of a pipe passage undergoing testing hermetically sealed on one side while detecting flow rate with a flow measuring device and pressure with a pressure detector, and detecting temperature of the gas used, and inputting the detected values of pressure, flow rate and temperature into a computation treatment apparatus, and internal capacity V | 07-02-2009 |
| 20100143239 | METHOD FOR PARALLEL OPERATION OF REACTORS THAT GENERATE MOISTURE - The method for parallel operation of moisture generating reactors according to the present invention operates so that an orifice, provided with an orifice hole having a predetermined opening diameter, is disposed on a mixed-gas inlet side of each of a plurality of moisture generating reactors connected in parallel with each other, and mixed gas G consisting of hydrogen and oxygen is supplied from a mixer to each of the moisture generating reactors through each orifice, and the flows of moisture generated by the moisture generating reactors are combined, and the resulting combined moisture is supplied to an apparatus that uses high-purity water. Thus, a need to increase the amount of high-purity water supply is met by allowing a plurality of moisture generating reactors to perform a parallel water generating operation by branching off a mixed gas consisting of H | 06-10-2010 |
