Patent application number | Description | Published |
20080284988 | Image projecting apparatus and image projecting method for use in the same - Disclosed herein is an image projecting apparatus, including: a one-dimension type light modulating device for modulating a light in accordance with image information; a projection optical system; and a light deflecting device for deflecting an image light in a direction approximately perpendicular to an extension direction of a one-dimensional image light emitted from the one-dimensional light modulating device; wherein the light deflecting device is composed of a first light deflecting device arranged between the projection optical system and the one-dimension type light modulating device, and a second light deflecting device arranged on an emission side of the projection optical system; the second light deflecting device is detachably mounted. | 11-20-2008 |
20090065946 | Method for fabricating semiconductor device and semiconductor device - A method of fabricating a semiconductor device having an air-gapped multilayer interconnect wiring structure is disclosed. After having formed a first thin film on or above a substrate, define a first opening in the first thin film. Then, deposit a conductive material in the first opening. Then form a second thin film made of a porous material above the first thin film with the conductive material being deposited in the first opening. Next, define in the second thin film a second opening extending therethrough, followed by deposition of a conductive material in the second opening. The first thin film is removed through voids in the second thin film after having deposited the conductive material in the second opening. An integrated semiconductor device as manufactured thereby is also disclosed. | 03-12-2009 |
20090078678 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for processing a substrate using plasma includes a first electrode configured to mount the substrate, a second electrode disposed to face the first electrode with a predetermined space, a chamber containing the first electrode and the second electrode, the chamber being capable of adjusting an inside atmosphere, a first electric power source device configured to apply a first RF voltage for controlling a self-bias voltage generated on the substrate to the first electrode, the first electric power source device applying a substantially constant width and a substantially constant value in a peak-to-peak voltage of an RF voltage of a first frequency at intervals, and a second electric power source device configured to apply a second RF voltage of a second frequency for generating plasma between the first and second electrodes to one of the first electrode and the second electrode. | 03-26-2009 |
20100225000 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate including a wiring layer; electrode pads that are not provided on, above and below with the semiconductor substrate and are provided to be electrically connected with wiring lines included in the wiring layer; and a resin layer that is fixed to the semiconductor substrate and supports the electrode pads. | 09-09-2010 |
20110049578 | ELECTRIC COMPONENT AND METHOD OF MANUFACTURING THE ELECTRIC COMPONENT - According to one embodiment, an electric component includes: a first insulating layer formed on a first wire; a second wire and a functional element formed on the first insulating layer; a second insulating layer formed on the first insulating layer; and a connection wire that connects the second wire and the first wire. In the connection wire, a first via, a second via, and an inter-via wire are integrally formed of the same material. The first via is formed in the second insulating layer. The second via is formed in the first and second insulating layers. | 03-03-2011 |
20120178192 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode. | 07-12-2012 |
20130127075 | GAS-LIQUID CONTACTING PLATE, GAS-LIQUID CONTACTING LAMINATED BLOCK BODY, GAS-LIQUID CONTACTING LAMINATED STRUCTURE AND GAS PURIFICATION DEVICE - A gas-liquid contacting plate of the present invention in which a treatment liquid flows from an upper side to a lower side direction of a substrate and a part of gas being in contact with the treatment liquid is absorbed into the treatment liquid, includes a downward protruding saw teeth-shaped portion in which a lower end side of the substrate has pitches at predetermined gaps. Further, a pore group for liquid dispersion having a predetermined gap is provided in a plurality of lines, in the substrate. An arrangement thereof is a zigzag arrangement. | 05-23-2013 |
20130248915 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side interconnection section, an n-side interconnection section, a phosphor layer, and a metal film. The semiconductor layer is formed on a substrate which is then removed. The p-side interconnection section is provided on the insulating film and electrically connected to the p-side electrode. The n-side interconnection section is provided on the insulating film and electrically connected to the n-side electrode. The phosphor layer is provided on the first surface and includes a step portion continued to the side surface of the semiconductor layer. The metal film is provided on the side surface of the semiconductor layer and a side surface of the step portion of the phosphor layer. | 09-26-2013 |