| Patent application number | Description | Published |
|---|
| 20080212636 | Surface-Emission Laser Diode and Fabrication Process Thereof - A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of Al | 09-04-2008 |
| 20080233017 | Semiconductor Oxidation Apparatus and Method of Producing Semiconductor Element - A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part. | 09-25-2008 |
| 20090168828 | VERTICAL-CAVITY, SURFACE-EMISSION TYPE LASER DIODE AND FABRICATION PROCESS THEREOF - A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector. | 07-02-2009 |
| 20090262770 | SURFACE-EMISSION LASER DIODE, SURFACE-EMISSION LASER DIODE ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS - A surface-emission laser diode of a vertical-cavity surface-emission laser structure includes a substrate and a mesa structure formed on the substrate, the mesa structure including therein a current confinement structure, wherein the current confinement structure includes a conductive current confinement region and an insulation region surrounding the conductive current confinement region, the insulation region being an oxide of a semiconductor material forming the conductive current confinement region, and wherein a center of the current confinement region is offset from a center of the mesa structure in a plane perpendicular to a laser oscillation direction. | 10-22-2009 |
| 20090286342 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, SURFACE-EMISSION LASER DIODE, AND PRODUCTION APPARATUS THEREOF, PRODUCTION METHOD, OPTICAL MODULE AND OPTICAL TELECOMMUNICATION SYSTEM - A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature. | 11-19-2009 |
| 20090295902 | SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING DEVICE - A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer. | 12-03-2009 |
| 20090303308 | SURFACE-EMITTING LASER ELEMENT, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS - A surface-emitting laser element for emitting light in a direction perpendicular to a substrate, including a substrate with a normal direction of a principal plane inclining toward one direction of <111> with respect to one direction of <100> and a mesa structure formed on the substrate and having a narrowed structure with an oxide produced by oxidizing a part of a layer to be oxidized selectively, containing aluminum and surrounding an electric current passage area, wherein a cross-section of mesa structure being parallel to the substrate is parallel to a substrate surface and orthogonal to both one direction of <100> and one direction of <111> and a length in a first direction passing through a center of the electric current passage area is more than a length in a second direction parallel to a substrate surface and orthogonal to the first direction. | 12-10-2009 |
| 20100060712 | SURFACE-EMISSION LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS - A surface-emission laser array comprises a plurality of surface-emission laser diode elements arranged in the form of a two-dimensional array, wherein a plurality of straight lines drawn perpendicularly to a straight line extending in a first direction from respective centers of the plurality of surface emission laser diode elements aligned in a second direction perpendicular to the first direction, are formed with generally equal interval in the first direction, the plurality of surface-emission laser diode elements are aligned in the first direction with an interval set to a reference value, and wherein the number of the surface-emission laser diode elements aligned in the first direction is smaller than the number of the surface-emission laser diode elements aligned in the second direction. | 03-11-2010 |
| 20100118907 | SURFACE-EMISSION LASER DIODE AND FABRICATION PROCESS THEREOF - A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of Al | 05-13-2010 |
| 20100311194 | Method For Manufacturing Surface-Emitting Laser Device, Optical Scanner, Image Forming Apparatus, And Oxidation Apparatus - Disclosed is a method for manufacturing a surface-emitting laser device that emits laser light in a direction perpendicular to a substrate. The method includes manufacturing a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting mirror including a selectively oxidized layer are laminated on the substrate; etching the laminated body from an upper surface to form a mesa structure having at least the selectively oxidized layer exposed at a side surface; and mounting the laminated body on a tray having a front surface shaped to follow a warpage of the laminated body at an oxidation temperature and selectively oxidizing the selectively oxidized layer from the side surface of the mesa structure, thereby generating a confinement structure in which a current passing region is surrounded by an oxide. | 12-09-2010 |
