| Patent application number | Description | Published |
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| 20100050940 | SUBSTRATE PROCESSING SYSTEM, CARRYING DEVICE AND COATING DEVICE - A substrate processing system includes a processing unit, a substrate loading unit, a substrate unloading unit, and a carrying unit. A carrying device has a constitution in which a suction portion suctioning and holding a substrate is rotatable about an arm portion provided in a base portion and the substrate is rotated in the state where the substrate is held by a holding portion. A coating device has a constitution in which a liquid material is ejected from a nozzle to both surfaces of the substrate rotating in an upright state. | 03-04-2010 |
| 20100297352 | COATING DEVICE AND COATING METHOD - A coating device includes a coating mechanism which includes nozzles for ejecting a liquid material onto front and rear surfaces of a substrate while rotating the substrate; and an adjusting mechanism which adjusts the coating state of the liquid material at the outer periphery of the substrate; wherein the adjusting mechanism includes a dip portion which dips the outer periphery of the substrate in a solution while rotating the substrate and dissolves; and a suction portion which suctions the vicinity of the outer periphery of the substrate after dipping in the solution. | 11-25-2010 |
| 20100297353 | COATING DEVICE AND COATING METHOD - A coating device includes a coating mechanism which includes nozzles for ejecting a liquid material onto front and rear surfaces of a substrate while rotating the substrate; and an adjusting mechanism which adjusts the coating state of the liquid material at the outer periphery of the substrate; wherein the adjusting mechanism includes a dip portion which dips the outer periphery of the substrate in a solution while rotating the substrate and dissolves and removes a thin film formed on the outer periphery of the substrate; and a suction portion which suctions the vicinity of the outer periphery of the substrate after dipping in the solution. | 11-25-2010 |
| 20100326354 | SUBSTRATE PROCESSING SYSTEM, CARRYING DEVICE, AND COATING DEVICE - A substrate processing system includes a processing unit, a substrate loading unit, a substrate unloading unit, and a carrying unit. A carrying device has a constitution in which a suction portion suctioning and holding a substrate is rotatable about an arm portion provided in a base portion and the substrate is rotated in the state where the substrate is held by a holding portion. A coating device has a constitution in which a liquid material is ejected from a nozzle to both surfaces of the substrate rotating in an upright state. | 12-30-2010 |
| 20110000428 | Substrate processing system - A coating device includes a coating mechanism which includes nozzles for ejecting a liquid material onto front and rear surfaces of the substrate while rotating a substrate in an upright state at a predetermined coating position, a carrying mechanism which carries the substrate between a substrate loading position, the coating position, and a substrate unloading position, and a dummy substrate holding mechanism which holds a dummy substrate at a holding position which is a position different from the substrate loading position, the coating position, and the substrate unloading position, and at which the carrying mechanism is allowed to connect with the dummy substrate. | 01-06-2011 |
| 20110008534 | COATING DEVICE AND NOZZLE MANAGING METHOD - A coating device including a coating mechanism which includes nozzles for ejecting a liquid material onto front and rear surfaces of the substrate while rotating a substrate in an upright state, and a nozzle managing mechanism which manages the state of the nozzles, in which the nozzle managing mechanism includes a soaking portion which dips the front end of the nozzle in a soak solution, and a discharging portion which discharges at least the soak solution, and a nozzle managing method. | 01-13-2011 |
| Patent application number | Description | Published |
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| 20090090948 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In a semiconductor device comprising a capacitive element, an area of the capacitive element is reduced without impairing performance, and further, without addition of an extra step in a manufacturing process. A first capacitor is formed between an active region of a semiconductor substrate provided through a first capacitive insulating film and a lower electrode comprised of a conductor film in the same layer as a select gate electrode of a select, a second capacitor is formed between the lower electrode, and an upper electrode comprised of a conductor film in the same layer as a memory gate electrode of a memory, provided through the second capacitive insulating film in the same layer as the insulating films of a multi-layer structure, including a charge storage layer, and a stacking-type capacitive element is comprised of the first capacitor and the second capacitor, wherein a planar shape of the lower electrode is a grid-like shape having a plurality of lengths of linear conductor films each having a first width, formed along a first direction with a first interval provided therebetween, and a plurality of lengths of linear conductor films each having a second width, formed along a second direction (the direction intersecting the first direction) with a second interval provided therebetween. | 04-09-2009 |
| 20100289120 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - In a semiconductor device comprising a capacitive element, an area of the capacitive element is reduced without impairing performance, and further, without addition of an extra step in a manufacturing process. A first capacitor is formed between an active region of a semiconductor substrate provided through a first capacitive insulating film and a lower electrode comprised of a conductor film in the same layer as a select gate electrode of a select, a second capacitor is formed between the lower electrode, and an upper electrode comprised of a conductor film in the same layer as a memory gate electrode of a memory, provided through the second capacitive insulating film in the same layer as the insulating films of a multi-layer structure, including a charge storage layer, and a stacking-type capacitive element is comprised of the first capacitor and the second capacitor, wherein a planar shape of the lower electrode is a grid-like shape having a plurality of lengths of linear conductor films each having a first width, formed along a first direction with a first interval provided therebetween, and a plurality of lengths of linear conductor films each having a second width, formed along a second direction (the direction intersecting the first direction) with a second interval provided therebetween. | 11-18-2010 |
