| Patent application number | Description | Published |
|---|
| 20080272462 | Nitride-Based Semiconductor Device and Method for Fabricating the Same - A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure | 11-06-2008 |
| 20080273562 | Nitride Semiconductor Device and Method for Fabricating the Same - A nitride semiconductor device | 11-06-2008 |
| 20080315231 | LIGHT SOURCE, OPTICAL PICKUP, AND ELECTRONIC APPARATUS - A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device. | 12-25-2008 |
| 20090022193 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate | 01-22-2009 |
| 20090059983 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer. | 03-05-2009 |
| 20090159924 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer. | 06-25-2009 |
| 20090294797 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device according to the present invention includes: a GaN substrate | 12-03-2009 |
| 20100148145 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate | 06-17-2010 |
| 20100259184 | LIGHT-EMITTING DEVICE - A light-emitting device according to the present invention includes a plurality of columnar semiconductors | 10-14-2010 |
