| Patent application number | Description | Published |
|---|
| 20080199790 | METHOD OF METAL PLATING BY USING FRAME - The frame plating process of the invention comprises the dry film resist pattern formation step at which a part of the dry film resist is located in such a way as to cap the upper position of the given pattern of opening concavity corresponding to the site needing film thickness precision. It is thus possible to obtain a fairly good film thickness distribution at the specific site needing film thickness precision in a simple manner yet without depending on the film thickness distribution of the plated film based on plating conditions. | 08-21-2008 |
| 20080204696 | METHOD OF ALIGNMENT - The invention provides an alignment method for applying a one layer of shot exposure on and throughout a substrate, wherein a shot exposure area throughout the substrate is divided into N block areas B | 08-28-2008 |
| 20080220366 | Resist pattern processing equipment and resist pattern processing method - A resist pattern processing apparatus comprises a stage for mounting a substrate having a patterned photoresist arranged on a surface thereof, a UV-emitting part for emitting UV rays to the stage, and an annular member for surrounding the whole periphery of the substrate. This allows the annular member to restrain ozone supplied near a mounting surface for the substrate on the stage from diffusing to the periphery of the stage, whereby the ozone concentration becomes even in the surface of the substrate mounted on the stage. | 09-11-2008 |
| 20080305442 | Patterned material layer, method of forming the same, microdevice, and method of manufacturing the same - A formation method for a patterned material layer comprising a step of exposing a composite layer to light in a predetermined pattern, the composite layer including a first photosensitive resin layer, a protective film, and an upper resin layer; a step of partly removing the exposed composite layer so as to form an opening exposing the substrate and form a groove along the main surface of the substrate on a side face of the opening by depressing the end portion of the upper resin layer on the substrate side, thereby forming a resist frame comprising the composite layer formed with the opening; a step of forming a vacuum coated layer having a material pattern part formed on the substrate in the opening and a part to lift off formed on the resist frame, by vacuum coating process; and a step of removing the part to lift off together with the resist frame, so as to yield a patterned material layer. | 12-11-2008 |
| 20090027809 | THIN-FILM MAGNETIC HEAD COMPRISING SHIELD/MAGNETIC-POLE LAYER HAVING SURFACE WITHOUT RIGHT NOR SHARP ANGLE - Provided is a thin-film magnetic head in which the concentration of magnetic flux in the shield layer and the magnetic pole layer is suppressed. The thin-film magnetic head comprises a plurality of magnetic layers that have front surfaces reaching a head end surface on the ABS side. Further in this head, at least one of the plurality of magnetic layers has a shape in which: each of edges corresponding to both side surfaces extends so as to spread obliquely rearward with each other from an end of a straight edge in a track width direction corresponding to the front surface; and the front surface reaching the head end surface has a shape in which upper and lower corner portions in each of both end portions in the track width direction form obtuse angles or rounded shapes. | 01-29-2009 |
| 20090039056 | PLANARIZING METHOD - Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized. | 02-12-2009 |
| 20090170274 | METHOD OF FORMING METAL TRENCH PATTERN IN THIN-FILM DEVICE - A method of forming a metal trench pattern in a thin-film device includes a step of depositing an electrode film on a substrate or on a base layer, a step of forming a resist pattern layer having a trench forming portion used to make a trench pattern, on the deposited electrode film, a step of forming a metal layer for filling spaces in the trench forming portion and for covering the trench forming portion, by performing plating through the formed resist pattern layer using the deposited electrode film as an electrode, a step of planarizing at least a top surface of the formed metal layer until the trench forming portion of the resist pattern layer is at least exposed, and a step of removing the exposed trench forming portion of the resist pattern layer. | 07-02-2009 |
| 20090284719 | ALIGNMENT METHOD AND APPARATUS OF MASK PATTERN - An alignment method of mask patterns in patterning processes includes forming a first layer by transferring a first mask pattern onto a wafer or a layer formed on the wafer, and forming a second layer by transferring a second mask pattern onto the first layer. The method particularly includes a first alignment step of performing, when forming the first layer, alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern, and alignment based on an amount of deviation of superposition of the second layer pattern on the first layer pattern. The deviation is caused by linear expansion and contraction of a wafer and caused by an orthogonal error between a wafer and a mask pattern, and also the deviation is obtained by measuring in advance in pattering processes successively performed for a plurality of wafers. The method also includes a second alignment step of performing, when forming the second layer, only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern. | 11-19-2009 |
| 20090294403 | Method of forming mask pattern, method of forming thin film pattern and method of forming magnetoresistive element - In the present invention, provided is a method of forming a mask pattern by which a fine thin film pattern may be formed more easily with higher resolution and precision. In the method of forming a mask pattern, a photoresist pattern having an opening is formed on a substrate, then, an inorganic film is formed so as to cover the upper surface of the photoresist pattern and the inside of the opening, then the inorganic film on the upper surface of the photoresist pattern is removed by a dry etching process. Subsequently, an inorganic mask pattern is formed by removing the photoresist pattern. The inorganic mask pattern thus formed hardly produces an issue of deformation such as physical displacement even when it is heated in the dry etching process. | 12-03-2009 |
| 20090311424 | METHOD FOR FORMING MICROPATTERN - The micropattern formation of the invention comprises forming a resist pattern, and then forming a carbon-containing film on the surface of the resist pattern, followed by ashing of the carbon-containing film and a portion of the resist surface constituting the resist pattern. Thus, the discharge state of ashing just after the initiation of discharge is so stabilized that the ashing rate distribution can be improved, and sensitive pattern slimming can be implemented with ease and high precision. | 12-17-2009 |
| 20100074062 | HEAT-ASSISTED MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING APPARATUS WITH THE MEDIUM - Provided is a magnetic recording medium that generates near-field light within itself and enables favorable heat-assisted magnetic recording with this near-field light. The medium comprises: a magnetic recording layer; and an optically changeable layer formed on the opposite side to a substrate relative to the magnetic recording layer, the optically changeable layer being made transparent or a refractive index of the layer being changed when irradiated by light with an intensity not less than a predetermined intensity. By the irradiation, a minute opening or a refractive-index-changed area is formed within the irradiated portion on the optically changeable layer. The light irradiation onto the minute opening or the refractive-index-changed area enables near-field light to be generated, which heats a portion of the magnetic recording layer. Thus, the anisotropic field of the portion is lowered to a writable value, which enables heat-assisted magnetic recording by applying write field. | 03-25-2010 |
