| Patent application number | Description | Published |
|---|
| 20090078318 | Photovoltaic Devices Including An Interfacial Layer - A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer. | 03-26-2009 |
| 20090194166 | PHOTOVOLTAIC DEVICES INCLUDING DOPED SEMICONDUCTOR FILMS - A photovoltaic cell can include a dopant in contact with a semiconductor layer. | 08-06-2009 |
| 20100059112 | Photovoltaic Devices Including Mg-Doped Semiconductor Films - A photovoltaic cell can include a dopant in contact with a semiconductor layer. | 03-11-2010 |
| 20100282320 | Photovoltaic Devices Including an Interfacial Layer - A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer. | 11-11-2010 |
| 20100307561 | DOPED METAL CONTACT - A photovoltaic device can include a second metal layer adjacent to a first layer, where the first layer is positioned adjacent to a substrate, and where the second metal layer includes a dopant; and a copper-indium-gallium diselenide (CIGS) layer adjacent to the second metal layer. | 12-09-2010 |
| 20100307568 | METAL BARRIER-DOPED METAL CONTACT LAYER - A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant. | 12-09-2010 |
| 20100326491 | DOPANT-CONTAINING CONTACT MATERIAL - A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant. | 12-30-2010 |
| 20110030776 | Photovoltaic device back contact - A photovoltaic device back contact is disclosed. The back contact can include an indium nitride. | 02-10-2011 |
