Patent application number | Description | Published |
20090078318 | Photovoltaic Devices Including An Interfacial Layer - A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer. | 03-26-2009 |
20090194166 | PHOTOVOLTAIC DEVICES INCLUDING DOPED SEMICONDUCTOR FILMS - A photovoltaic cell can include a dopant in contact with a semiconductor layer. | 08-06-2009 |
20100059112 | Photovoltaic Devices Including Mg-Doped Semiconductor Films - A photovoltaic cell can include a dopant in contact with a semiconductor layer. | 03-11-2010 |
20100282320 | Photovoltaic Devices Including an Interfacial Layer - A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer. | 11-11-2010 |
20100307561 | DOPED METAL CONTACT - A photovoltaic device can include a second metal layer adjacent to a first layer, where the first layer is positioned adjacent to a substrate, and where the second metal layer includes a dopant; and a copper-indium-gallium diselenide (CIGS) layer adjacent to the second metal layer. | 12-09-2010 |
20100307568 | METAL BARRIER-DOPED METAL CONTACT LAYER - A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant. | 12-09-2010 |
20100326491 | DOPANT-CONTAINING CONTACT MATERIAL - A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant. | 12-30-2010 |
20110030776 | Photovoltaic device back contact - A photovoltaic device back contact is disclosed. The back contact can include an indium nitride. | 02-10-2011 |
20110277812 | PHOTOVOLTAIC DEVICE CONDUCTING LAYER - A multilayered structure may include a doped buffer layer on a transparent conductive oxide layer. | 11-17-2011 |
20130005075 | METAL BARRIER-DOPED METAL CONTACT LAYER - A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant. | 01-03-2013 |
20130130433 | METHOD AND APPARATUS PROVIDING SINGLE STEP VAPOR CHLORIDE TREATMENT AND PHOTOVOLTAIC MODULES - A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer. | 05-23-2013 |
20130143352 | PHOTOVOLTAIC DEVICES INCLUDING MG-DOPED SEMICONDUCTOR FILMS - A photovoltaic cell can include a dopant in contact with a semiconductor layer. | 06-06-2013 |
20130189635 | METHOD AND APPARATUS PROVIDING SEPARATE MODULES FOR PROCESSING A SUBSTRATE - A method and apparatus for heat treating a photovoltaic device. The apparatus includes a heating module, a processing module, and a cooling module in which the operating temperatures of the modules may be controlled separately. The heating module is configured to pre-heat a substrate and stabilize the substrate at the desired target temperature, the processing module is configured to thermally process the substrate, and the cooling module is configured for post-treatment cooling of the substrate. | 07-25-2013 |
20130327391 | APPARATUS AND METHOD FOR IMPROVING EFFICIENCY OF THIN-FILM PHOTOVOLTAIC DEVICES - A method for producing apparatus for producing and photovoltaic device including semiconductor layers with halide heat treated surfaces that increase grain growth within at least one of the semiconductor layers and improve the interface between the semiconductor layers. The halide heat treatment includes applying and heating multiple coatings of a halide compound on surfaces adjacent to or part of the semiconductor layers. | 12-12-2013 |