Patent application number | Description | Published |
20090116363 | INFORMATION STORAGE DEVICE AND STORAGE MEDIA - In an information memory apparatus having minute areas for storing information arranged in x, y and z directions three-dimensionally, parallel rays are irradiated to a memory area MA in a direction perpendicular to a z-axis to take projection images of the memory area MA while rotating the memory area MA around the z-axis little by little. The light rays irradiated at this time have a size which covers at least a direction of an x-y plane of the memory area. A computation unit PU finds data and addresses of minute areas distributed three-dimensionally by performing computation based upon the principle of computer tomography on the projection images. As for data writing, a change is given to optical transmissivity or light emission characteristics by irradiating laser light focused by a lens OL placed outside the memory area to a desired minute area and causing heat denaturation within the pertinent minute area. | 05-07-2009 |
20090154304 | Information memory device and memory medium - An information memory device using an electromagnetic-wave resonance phenomenon is provided to achieve both high density and long-period storage of stored data. Memory cells are three-dimensionally arranged in the inside of a solid-like medium which is not contacted with a surface of the medium, and the memory cell has resonance characteristics to electromagnetic waves depending on the space coordinates of the memory cell. For the medium, a material is selected so that an electromagnetic wave having the resonance frequency of the memory cell. By observing absorption spectra of the irradiated electromagnetic wave or emission spectra after the absorption, three-dimensional space coordinates of the memory cell are calculated. | 06-18-2009 |
20090257341 | MULTILAYER OPTICAL RECORDING MEDIUM - In a multilayer optical recording medium having at least three recording layers, an influence of interlayer crosstalk due to an unnecessary light is removed. Each of the recording layers includes an information recording area, and the recording layers other than the nearest recording layer and the farthest recording layer when viewed from a light incident side include a first annular area having uneven patterns formed thereon, and a second annular area having uneven patterns formed thereon, the first annular area being adjacent to an inner side of the information recording area, the second annular area being adjacent to an outer side of the information recording area. | 10-15-2009 |
20100226239 | MULTILAYER OPTICAL DISC - A multilayer optical disc which has three or more recording layers and enables easy positioning of a focused beam spot onto a particular recording layer in which a BCA is disposed. An inter-layer distance between a particular recording layer and a recording layer adjacent to the particular recording layer is larger than the other inter-layer distances in which, at the focused beam spot positioning, the focused beam spot traverses the said adjacent recording layer earlier than the other recording layer adjacent to the particular recording layer. | 09-09-2010 |
20110049454 | SEMICONDUCTOR DEVICE - In a phase-change memory, an interface layer is inserted between a chalcogenide material layer and a plug. The interface layer is arranged so as not to cover the entire interface of a plug-like electrode. When the plug is formed at an upper part than the chalcogenide layer, the degree of integration is increased. The interface layer is formed by carrying out sputtering using an oxide target, or, by forming a metal film by carrying out sputtering using a metal target followed by oxidizing the metal film in an oxidation atmosphere such as oxygen radical, oxygen plasma, etc. | 03-03-2011 |
20110299374 | MULTILAYER OPTICAL DISC - A multilayer optical disc which has three or more recording layers and enables easy positioning of a focused beam spot onto a particular recording layer in which a BCA is disposed. An inter-layer distance between a particular recording layer and a recording layer adjacent to the particular recording layer is larger than the other inter-layer distances in which, at the focused beam spot positioning, the focused beam spot traverses the said adjacent recording layer earlier than the other recording layer adjacent to the particular recording layer. | 12-08-2011 |
20120044595 | PERPENDICULAR MAGNETIC RECORDING MEDIUM (PMRM) AND MAGNETIC STORAGE SYSTEMS USING THE SAME - In one embodiment, a perpendicular magnetic recording medium (PMRM) includes a first interlayer comprising Ru or a Ru alloy, a second interlayer above the first interlayer comprising Ru or a Ru alloy, and a third interlayer formed between the first interlayer and the second interlayer that reduces an average cluster size of the second interlayer. In another embodiment, a PMRM includes a first interlayer comprising Ru or a Ru alloy, a second interlayer above the first interlayer comprising Ru or a Ru alloy, and a third interlayer formed between the first interlayer and the second interlayer that reduces an average cluster size of the second interlayer. The third interlayer has a thickness of between about 1.0 nm and about 3.0 nm and has a structure selected from a group consisting of: BCC, B2, C11b, L21, and D03. Other PMRMs and methods of fabrication are presented as well. | 02-23-2012 |
20120087034 | PERPENDICULAR MAGNETIC RECORDING MEDIUM AND MAGNETIC STORAGE APPARATUS USING THE SAME - According to one embodiment, a perpendicular magnetic recording medium includes a soft magnetic underlayer formed above a substrate, a lower seed layer formed above the soft magnetic underlayer, at least one upper seed layer formed above the lower seed layer, an interlayer formed above the at least one upper seed layer, a perpendicular recording layer formed above the interlayer, and a protective layer formed above the perpendicular recording layer, wherein the at least one upper seed layer comprises Ni or a Ni based alloy including N, and wherein the lower seed layer includes Ni and at least one element selected from a group consisting of: W and Cr. Other embodiments are described herein regarding perpendicular magnetic recording systems and methods of producing perpendicular magnetic media. | 04-12-2012 |
20120099220 | PERPENDICULAR MAGNETIC RECORDING MEDIUM (PMRM) AND SYSTEMS THEREOF - In one embodiment, a perpendicular magnetic recording medium includes a crystalline seed layer having a pseudo-hcp structure with stacking faults formed above a soft magnetic underlayer, a first interlayer comprising Ru and one of W, Ta, Mo, and Nb formed above the crystalline seed layer, a second interlayer formed above the first interlayer, and a magnetic recording layer formed above the second interlayer. The first interlayer has a W concentration between about 32 at % and 50 at %, Mo in a concentration between about 36 at % and 52 at %, Ta in a concentration between about 20 at % and 30 at %, or Nb in a concentration between about 7 at % and 30 at %. In another embodiment, a system includes a recording medium as described above, a magnetic head for reading from and/or writing to the medium, a head slider for supporting the head, and a control unit coupled to the head. | 04-26-2012 |
20120154948 | PERPENDICULAR MAGNETIC RECORDING MEDIA HAVING LOW MEDIUM NOISE AND SYSTEMS USING THE SAME - In one embodiment, a perpendicular magnetic recording medium includes a substrate, a soft-magnetic underlayer above the substrate, a seed layer above the soft-magnetic underlayer, a first intermediate layer above the seed layer, a second intermediate layer above the first intermediate layer, a recording layer above the second intermediate layer, and a protective layer above the recording layer. The second intermediate layer includes an Ru alloy having an element selected from a group consisting of: Ti in a range from about 20 at. % to about 50 at. %, Nb in a range from about 20 at. % to about 50 at. %, Al in a range from about 20 at. % to about 40 at. %, Ta in a range from about 30 at. % to about 50 at. %, and Si in a range about 20 at. % to about 40 at. %. Other magnetic media and systems using this media are described according to more embodiments. | 06-21-2012 |