| Patent application number | Description | Published |
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| 20090188624 | METHOD AND APPARATUS FOR ENHANCING FLOW UNIFORMITY IN A PROCESS CHAMBER - Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent. | 07-30-2009 |
| 20090214798 | APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING - Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region. | 08-27-2009 |
| 20090218043 | GAS FLOW EQUALIZER PLATE SUITABLE FOR USE IN A SUBSTRATE PROCESS CHAMBER - A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port. | 09-03-2009 |
| 20090230089 | ELECTRICAL CONTROL OF PLASMA UNIFORMITY USING EXTERNAL CIRCUIT - A method and apparatus for controlling plasma uniformity is disclosed. When etching a substrate, a non-uniform plasma may lead to uneven etching of the substrate. Impedance circuits may alleviate the uneven plasma to permit more uniform etching. The impedance circuits may be disposed between the chamber wall and ground, the showerhead and ground, and the cathode can and ground. The impedance circuits may comprise one or more of an inductor and a capacitor. The inductance of the inductor and the capacitance of the capacitor may be predetermined to ensure the plasma is uniform. Additionally, the inductance and capacitance may be adjusted during processing or between processing steps to suit the needs of the particular process. | 09-17-2009 |
| 20090250169 | LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE - A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner. | 10-08-2009 |
| 20100081284 | METHODS AND APPARATUS FOR IMPROVING FLOW UNIFORMITY IN A PROCESS CHAMBER - Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a flow equalizer configured to control the flow of gases between a process volume and an exhaust port of a process chamber. The flow equalizer includes at least one restrictor plate configured to be disposed in a plane proximate a surface of a substrate to be processed and defines an azimuthally non-uniform gap between an edge of the at least one restrictor plate and one of either a chamber wall or a substrate support when installed in the process chamber. | 04-01-2010 |
| 20100096109 | METHODS AND APPARATUS FOR RAPIDLY RESPONSIVE HEAT CONTROL IN PLASMA PROCESSING DEVICES - Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein. | 04-22-2010 |
| 20110005680 | TUNABLE GAS FLOW EQUALIZER - A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt | 01-13-2011 |
| 20110120505 | APPARATUS AND METHOD FOR FRONT SIDE PROTECTION DURING BACKSIDE CLEANING - Embodiments of the present invention provide apparatus and method for front side protection while processing side and backside of a substrate. One embodiment of the present invention provides a showerhead configured to provide a purge gas to a front side of a substrate during a backside etch processing. The showerhead comprises a body configured to be disposed over the front side of the substrate. The body has a process surface configured to face the front side of the substrate. The process surface has an outer circular region, a central region, a middle region between the outer central region and the central region. The first plurality of holes are distributed in the outer circular region and configured to direct the purge gas towards an edge area of the front side of the substrate. No gas delivery hole is distributed within a substantial portion of the middle region. | 05-26-2011 |
| 20110151590 | APPARATUS AND METHOD FOR LOW-K DIELECTRIC REPAIR - A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair. | 06-23-2011 |
