| Patent application number | Description | Published |
|---|
| 20080280212 | METHOD FOR PHOTOMASK FABRICATION UTILIZING A CARBON HARD MASK - Methods for forming a photomask using a carbon hard mask are provided. In one embodiment, a method of forming a photomask includes etching a chromium layer through a patterned carbon hard mask layer in the presence of a plasma formed from a process gas containing chlorine and carbon monoxide. | 11-13-2008 |
| 20090183322 | ELECTROSTATIC SURFACE CLEANING - Embodiments of the present invention generally provide apparatus and methods for cleaning a substrate, such as a mask. One embodiment of the present invention provides an apparatus for cleaning a substrate comprising a substrate support configured to receive and support the substrate, a collecting tip connected with an electrostatic power source, wherein the collecting tip is configured to pickup particles on a surface of the substrate using electrostatic force, and an indexing mechanism configured to provide relative movement between the collecting tip and the substrate support. | 07-23-2009 |
| 20090186282 | CONTAMINATION PREVENTION IN EXTREME ULTRAVIOLET LITHOGRAPHY - Embodiments of the present invention provide methods and apparatus for removing debris particles using a stream of charged species. One embodiment of the present invention provides an apparatus for removing debris particles from a beam of radiation comprising a charged species source configured to dispense electrically charged species, and a collecting plate biased electrically opposite to the charged species from the charged species source, wherein the collecting plate and the charged species source are disposed on opposite sides of the beam of radiation, a stream of charged species from the charged species source to the collecting plate intersects the beam of radiation, the stream of charged species is configured to attach and remove debris particles from the beam of radiation by electrostatic force, and the collecting plate is configured to receive the charged species and the debris particles removed from the beam of radiation. | 07-23-2009 |
| 20090325387 | METHODS AND APPARATUS FOR IN-SITU CHAMBER DRY CLEAN DURING PHOTOMASK PLASMA ETCHING - Embodiments of the invention include method for in-situ chamber dry clean after photomask plasma etching. In one embodiment, the method includes placing a photomask upon a support pedestal, introducing a process gas into a process chamber, forming a plasma from the process gas, etching a chromium containing layer disposed on the photomask in the presence of the plasma, removing the photomask from the support pedestal, placing a dummy substrate on the pedestal and performing an in-situ dry cleaning process by flowing a cleaning gas containing O | 12-31-2009 |
| 20100028813 | BACKSIDE CLEANING OF SUBSTRATE - A pellicle cover, system, and method for cleaning a photomask are disclosed. A pellicle cover is disposed over a photomask and pellicle without damaging the markings surrounding the mask pattern area. The pellicle cover can be practicably implemented in an improved photomask cleaning system and process in which the backside of the photomask may be cleaned without removing the pellicle from the patterned surface. | 02-04-2010 |
| 20100078039 | METHOD AND APPRATUS FOR MASK PELLICLE ADHESIVE RESIDUE CLEANING - Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly. In another embodiment, a method of cleaning a periphery region of a photomask substrate includes providing a photomask substrate having a periphery portion and a center portion disposed on a support assembly in a processing cell, lowering a protection cover disposed in the processing cell to cover the center portion of the photomask substrate, providing a brush in the processing cell to clean the periphery portion of the photomask substrate. | 04-01-2010 |
| 20100276391 | INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF - Methods of operating inductively coupled plasma (ICP) reactors having ICP sources and substrate bias with phase control are provided herein. In some embodiments, a method of operating a first plasma reactor having a source RF generator inductively coupled to the first plasma reactor on one side of a substrate support surface of a substrate support within the first plasma reactor and a bias RF generator coupled to the substrate support on an opposing side of the substrate support surface, wherein the source RF generator and the bias RF generator provide respective RF signals at a common frequency may include selecting a desired value of a process parameter for a substrate to be processed; and adjusting the phase between respective RF signals provided by the source RF generator and the bias RF generator to a desired phase based upon a predetermined relationship between the process parameter and the phase. | 11-04-2010 |
| 20110073564 | METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLE PLASMA REACTOR - Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation. | 03-31-2011 |
| 20110162797 | METHOD AND APPARATUS FOR PHOTOMASK PLASMA ETCHING - A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask. | 07-07-2011 |
