Patent application number | Description | Published |
20080290462 | PROTECTIVE STRUCTURE - A protective structure is produced by providing a semiconductor substrate with a doping of a first conductivity type. A semiconductor layer with a doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone with a doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone with a doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first region and the second region of the semiconductor layer. A common connection device is formed for the first dopant zone and the second dopant zone. | 11-27-2008 |
20110169596 | System and Method for Integrated Inductor - In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seemless ferromagnetic material surrounding at least a first portion of the conductor. | 07-14-2011 |
20110186972 | Method for Producing a Protective Structure - A protective structure is produced by providing a semiconductor substrate with a doping of a first conductivity type. A semiconductor layer with a doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, wherein the buried layer is produced at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone with a doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone with a doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first region and the second region of the semiconductor layer. A common connection device is formed for the first dopant zone and the second dopant zone. | 08-04-2011 |
20120034760 | Metallization for Chip Scale Packages in Wafer Level Packaging - In one embodiment, a method for forming the semiconductor device includes forming a first trench from a front side of a substrate. The substrate has a front side and an opposite back side, and the first trench having sidewalls and a bottom surface. A insulator layer is formed over the sidewalls and the bottom surface. A first conductive layer is formed over a top portion of the sidewalls of the first trench. The substrate is separated along the first trench. | 02-09-2012 |
20120086102 | Integrated Circuits with Magnetic Core Inductors and Methods of Fabrications Thereof - In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil. | 04-12-2012 |
20120161257 | Method for Fabricating a Cavity Structure, for Fabricating a Cavity Structure for a Semiconductor Structure and a Semiconductor Microphone Fabricated by the Same - Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed. | 06-28-2012 |
20120225544 | Method for producing a semiconductor component - Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×10 | 09-06-2012 |
20120289023 | Method for Producing a Semiconductor Device - A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench. | 11-15-2012 |
20120289047 | Method for Producing a Connection Region on a Side Wall of a Semiconductor Body - A method for producing a connection region on a side wall of a semiconductor body is disclosed. A first trench is produced on a first surface of a semiconductor body and extends into the semiconductor body. An insulation layer is formed on the side walls and on the bottom of the first trench, and the first trench is only partially filled. The unfilled part of the first trench is filled with an electrically conductive material. A separating trench is produced along the first trench in such a way that a side wall of the separating trench directly adjoins the first trench. The part of the insulation layer which adjoins the separating trench is at least partially removed, with the result that at least some of the electrically conductive material in the first trench is exposed. | 11-15-2012 |
20120306060 | Protective Structure - A protective structure is produced by providing a semiconductor substrate having doping of a first conductivity type. A semiconductor layer having doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, producing a layer at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone having doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone having doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first and second regions of the semiconductor layer. A common connection device is formed for the first and second dopant zones. | 12-06-2012 |
20130065379 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment. | 03-14-2013 |
20130239404 | System and Method for Integrated Inductor - In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor. | 09-19-2013 |
20130260483 | Integrated Circuits With Magnetic Core Inductors And Methods of Fabrications Thereof - In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil. | 10-03-2013 |
20130341771 | PROTECTIVE STRUCTURE - A protective structure may include: a semiconductor substrate having a doping of a first conductivity type; a semiconductor layer having a doping of a second conductivity type arranged at a surface of the semiconductor substrate; a buried layer having a doping of the second conductivity type arranged in a first region of the semiconductor layer and at the junction between the semiconductor layer and the semiconductor substrate; a first dopant zone having a doping of the first conductivity type arranged in the first region of the semiconductor layer above the buried layer; a second dopant zone having a doping of the second conductivity type arranged in a second region of the semiconductor layer; an electrical insulation arranged between the first region and the second region of the semiconductor layer; and a common connection device for the first dopant zone and the second dopant zone. | 12-26-2013 |
20140028192 | Field Emission Devices and Methods of Making Thereof - In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device. | 01-30-2014 |
20140037116 | Method for Fabricating a Cavity Structure, for Fabricating a Cavity Structure for a Semiconductor Structure and a Semiconductor Microphone Fabricated by the Same - Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed. | 02-06-2014 |
20140097514 | Semiconductor Package and Method for Fabricating the Same - A semiconductor package includes a semiconductor chip, an inductor applied to the semiconductor chip. The inductor includes at least one winding. A space within the at least one winding is filled with a magnetic material. | 04-10-2014 |
20140103460 | MEMS Device and Method of Manufacturing a MEMS Device - A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack. | 04-17-2014 |
20140203399 | Integrated Circuits with Magnetic Core Inductors and Methods of Fabrications Thereof - In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil. | 07-24-2014 |
20140235039 | METHOD FOR PRODUCING A PROTECTIVE STRUCTURE - A method for producing a protective structure may include: providing a semiconductor base substrate with a doping of a first conductivity type; producing a first epitaxial layer on the substrate; implanting a dopant of a second conductivity type in a delimited implantation region of the first epitaxial layer; applying a second epitaxial layer with a doping of the second conductivity type on the first epitaxial layer; forming an insulation zone in the second epitaxial layer, such that the second epitaxial layer is subdivided into first and second regions; producing a first dopant zone with a doping of the first conductivity type in the first region above the implantation region; producing a second dopant zone with a doping of the second conductivity type in the second region; outdiffusing the dopant from the implantation region to form a buried layer at the junction between the first epitaxial layer and the first region. | 08-21-2014 |
20140264651 | Semiconductor Devices and Methods of Forming Thereof - In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane. | 09-18-2014 |
20140327103 | Semiconductor Device with an Electrode Buried in a Cavity - A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate. | 11-06-2014 |
20150056784 | Method for Manufacturing a Semiconductor Device by Thermal Treatment with Hydrogen - A semiconductor device is manufactured by forming semiconductor elements extending between a front surface and a rear side of a semiconductor layer. This includes forming a porous area at a surface of a semiconductor body that includes a porous structure in the porous area, forming the semiconductor layer on the porous area by epitaxial growth so as to have a thickness in a range of 5 μm to 200 μm, and forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer by ion implantation. After forming the semiconductor regions, hydrogen is introduced into the porous area by a thermal treatment, activating a reallocation of pores and causing cavities to be generated. The semiconductor layer is separated from the semiconductor body along the porous area. After the separation, rear side processing is applied to the semiconductor layer. | 02-26-2015 |
20150069591 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage. | 03-12-2015 |
20150091183 | ARRANGEMENT AND METHOD FOR MANUFACTURING THE SAME - An arrangement is provided. The arrangement may include: a die including at least one electronic component and a first terminal on a first side of the die and a second terminal on a second side of the die opposite the first side, wherein the first side being the main processing side of the die, and the die further including at least a third terminal on the second side; a first electrically conductive structure providing current flow from the third terminal on second side of the die to the first side through the die; a second electrically conductive structure on the first side of the die laterally coupling the second terminal with the first electrically conductive structure; and an encapsulation material disposed at least over the first side of the die covering the first terminal and the second electrically conductive structure. | 04-02-2015 |
20150137305 | PROTECTIVE STRUCTURE AND METHOD FOR PRODUCING A PROTECTIVE STRUCTURE - Described herein is a protective structure. The protective structure includes a semiconductor substrate, a first diode disposed at least one of in or on the semiconductor substrate and a diode arrangement disposed at least one of in or on the semiconductor substrate. The diode arrangement includes a stack of a second diode and a transient voltage suppressor (TVS) diode connected in series with the second diode. The diode arrangement is in parallel with the first diode. | 05-21-2015 |
20150221523 | ARRANGEMENT AND METHOD FOR MANUFACTURING THE SAME - An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration. | 08-06-2015 |
Patent application number | Description | Published |
20100216960 | Polycarboxylate Ether As A Dispersing Agent For Inorganic Pigment Formulations - The invention relates to the use of macromonomers produced using DMC catalyst for the production of polycarboxylate ethers obtainable by polymerization of the monomers (A), (B), and (C), wherein (A) is a monomer of the formula (I), | 08-26-2010 |
20100222500 | Dispersing Agent for Aqueous Pigment Preparations - The invention relates to aqueous pigment preparations containing at least one organic and/or inorganic pigment, as well as dispersing agent that comprises or more structural units of the formula (I) | 09-02-2010 |
20130165580 | Sedimentation-Stabilized Water-Based Pigment Preparations - The invention relates to aqueous pigment preparations, containing (A) 1 to 75 wt % of an organic or inorganic white or colored pigment or a mixture of various organic or inorganic white or colored pigments, (B) 0.01 to 40 wt % of one or more wetting and dispersing additives, (C) 0.01 to 5 wt % of a water-soluble or water-swellable, cross-linked copolymer containing 50 to 98.99 wt % of acrylamidoalkylsulfonic acid and salts thereof of the formula (I), 1 to 49.99 wt % of cyclic N-vinylcarboxamides of the formula (II), and 0.01 to 8 wt % of a cross-linking monomer having at least 2 olefinically unsaturated units, wherein R is a hydrogen atom or a methyl group, A is a linear or branched alkylene group having 1 to 8 carbon atoms, M is a hydrogen atom, ammonium, or an alkali metal ion, and n is an integer from 2 to 9. | 06-27-2013 |
20140005315 | Branched Polyalkylene Glycol Ethers As De-Airing Wetting And Dispersing Agents For Aqueous Dispersion Colors | 01-02-2014 |
20140100331 | Polyalkylene Glycol Block Copolymers Containing Phosphorus Groups And Use Thereof As Emulsifiers For Emulsion Polymerization - The invention provides aqueous polymer dispersions comprising polyalkylene glycol block copolymers containing phosphorus groups of the formula (I) | 04-10-2014 |
20140345495 | Alkoxylates And Amine-Containing Inorganic Pigment Dispersions - The invention relates to aqueous pigment preparations containing (A) 30 to 75 wt. % of at least one inorganic white or colored pigment or a mixture of different inorganic white or colored pigments; (B) 0.01 to 15 wt. % of at least one alcohol alkoxylate of the formula (I), | 11-27-2014 |
20150175780 | Fatty Acid Condensation Products As Dispersing Agent In Pigment Preparations - The invention relates to aqueous pigment preparations containing (A) 1.0 to 75.0 percent by weight of at least one organic or inorganic white or coloured pigment or a mixture of different inorganic white or coloured pigments, (B) 0.01 to 8.0 percent by weight of at least one fatty acid condensation product with the formula (I), (C) 0.01 to 12.0 percent by weight of a nonionic surfactant and (G) water. | 06-25-2015 |
20150247023 | Derivatives Of Sulphosuccinic Acid As A Dispersing Agent In Aqueous Binder-Free Pigment Preparations - The invention relates to aqueous binder-free pigment preparations containing (A) 1.0 to 75.0 wt. % of at least one organic or inorganic white or coloured pigment or a mixture of different organic and inorganic white or coloured pigments, (B) 0.01 to 8.0 wt. % of at least one compound of formula (I), R being a saturated or unsaturated, linear or branched, aliphatic or alicyclic hydrocarbon group with 6 to 18 carbon atoms; n is a whole number from 0 to 10; A is an oxygen atom or a bi-functional group of formula (II), B is a hydrogen atom or a group of formula (III), bonding thereof occurring by means of the valency characterised by *, X and Y are selected from sulphonic acid groups in acidic form or their sodium, potassium and ammonium salt, and hydrogen atoms, where if X represents a sulphonic acid group or its salt then Y is a hydrogen atom, and vice versa if X represents a hydrogen atom then Y is a sulphonic acid group or its salt, and M represents a hydrogen atom or a sodium, potassium or ammonium ion, and if B is a functional group of formula (III), n stands for 0 and M stands for a sodium atom, (C) 0.01 to 12.0 wt. % of a non-ionic surfactant, and (G) is water. | 09-03-2015 |
20150252174 | Dispersing Agent From Renewable Raw Materials For Binding Agent-Free Pigment Preparations - The invention relates to aqueous, binding agent-free pigment preparations, containing (A) 1.0 to 75.0 wt % of at least one organic or inorganic white or colored pigment or a mixture of various organic and inorganic white or colored pigments, (B) 0.01 to 8.0 wt. % of at least one phosphatide of formula (I), wherein R represents a group containing a carbon, hydrogen, oxygen atom and optionally a nitrogen and sulfur atom group, (C) 0.01 to 12.0 wt. % of a polyhydroxy fatty acid amide of formula (II) in which R | 09-10-2015 |
20150259503 | Binding Agent Free-Pigment Preparations Containing Phosphoric Acid Ester - Phosphoric acid ester as dispersing agents in binding agent free-pigment preparations. The invention relates to aqueous, binding agent free-pigment preparations, containing (A) 1.0-75.0 wt.-% of at least one organic or inorganic white or coloured pigment or a mixture of different organic and inorganic white or coloured pigments, (B) 0.01 to 8.0 wt. % of at least one phosphoric acid ester of formula (IV), wherein R represents a linear or cross-branched, saturated or unsaturated C | 09-17-2015 |
20150267038 | Dispersing Agent From Renewable Raw Materials For Binding Agent-Free Pigment Preparations - The invention relates to aqueous, binding agent-free pigment preparations, containing: (A) 1.0- to 75.0 wt. % of at least one organic or inorganic white or coloured pigment or a mixture of different organic and inorganic white or coloured pigments; (B) 0.01 to 8.0 wt. % of at least one phosphatide of formula (I), wherein R represents a group containing carbon, hydrogen and oxygen atoms and optionally nitrogen and sulfur atoms; 0.01 to 12.0 wt. % of a fatty acid alkanol amide ethoxylate of the formula (II), wherein a represents an integer between 3 and 50, R | 09-24-2015 |
Patent application number | Description | Published |
20080202430 | MILKING STATION AND METHOD FOR MILKING - A milking station and a method of milking for improving hygiene at a milking station, including a device for removing contaminants stuck to the floor of an accommodating area, a device for producing a directed flow of the contaminants provided on the floor. The surface of the milking area is wetted by nozzles integrated in a region of the floor of the milking area before an animal is milked, dirt is washed away from the floor of the milking area after milking, and the floor is then automatically wetted once again. | 08-28-2008 |
20080210171 | Milking parlor - A milking parlor, milking module, and a closing unit comprising at least two closing members to optionally release or close a corresponding number of openings in a milking parlor floor which serves as a standing area. The closing members are disposed to be rotatable about a rotational axis at least between a closed position and an open position, wherein the open position allows at least one animal-related treatment means to be guided through said opening. Said rotational axis is disposed in a central region between the closing members. | 09-04-2008 |
20090165725 | METHOD FOR MILKING ANIMALS IN A GROUP - A method for milking animals in a group at a plurality of milking locations formed in a milking parlor, the method including the steps of manually applying, substantially successively, at each milking location a milking device to the udder of the animal to be milked and starting milking by a milking controller that controls the milking device. For adaptation to the individual needs of the milker, the present method suggests that a subsequent milking device of the milking parlor should be started in an automated manner in the order that corresponds to the order in which the milking device was attached and as a result of the starting of the preceding milking controller. The present method can be used for starting various milking phases, e.g. the automatic preparation phase for arranging the milking cups at a removal position for the user, or the milking phase in which milk is milked from the animal to be milked, in an automated manner on the basis of the respective time values previously required by a user for user-specific-phases. | 07-02-2009 |
20090255472 | Milking Parlour and Method for the Production Thereof - The invention relates to a milking parlor and a method for manufacturing same, said milking parlor comprising a work area for an operator and a platform elevated relative to said area, which forms a standing and walking area for the animals to be milked, said platform comprising a substructure on its side facing the work area where a utility space is left open beneath the standing and walking area, and wherein the substructure is formed by load-bearing elements positioned one after the other in the lengthwise direction and configured to be substantially identical. | 10-15-2009 |
Patent application number | Description | Published |
20110105761 | Salts Comprising Aryl-Alkyl-Substituted Imidazolium and Triazolium Cations and the Use Thereof - The present invention relates to salts comprising novel aryl-alkyl-substituted imidazolium and triazolium cations and arbitrary anions. The invention further relates to methods for the chemical conversion and separation of substances, comprising the salts according to the invention as solvents, solvent additives, or extraction means, and to the use of the salts according to the invention, for example as solvents or solvent additives in chemical reactions, as extracting agents for the separation of substances, or for storing hydrogen. According to the invention, the object is achieved by salts of the general formula (I), where X— is an anion, Y1 and Y2 are CH, or Y1 is CH and Y2 is N, or Y1 is N and Y2 is CH, n is a number from 1 up to an including 18, Q is selected from —CH3, —OH, —ORx, —S03H, —S03Rx, —COOH, —COORx, —CORx, NH2, —NHRx, —N(Rx)2, and —CH(Rx)2, Z is H or Rx, R1, R2, R3, R4 and R5 independently from each other are —H, -halogen, —N02, —NH2, —NHRx, —N(Rx)2, —Rx, —COORx or —ORx, where Rx is an optionally substituted and/or branched C1 to C18-alkyl group, excluding compounds of the general formula (I), where Y1 and Y2 are CH and R1, R2, R3, R4 and R5 are H, excluding compounds of the general formula (I), where Y1 and Y2 are CH, R1=R3=R5=CH3 is true, n=1, 2, 6 and Q=CH3 is true, excluding compounds of the general formula (I), where Y1 is CH and Y2 is N, R1, R2, R3, R4 and R5 are H, n=1 is true, and Q=CH3 is true, and excluding compounds of the general formula (I), where Y1 and Y2 are CH, R1, R2, R4, R5=H is true, R3=ORx is true, and Rx is a hydrocarbon having 3 or 12 carbon atoms. | 05-05-2011 |
Patent application number | Description | Published |
20110124933 | CATALYST FOR THE DEHYDROAROMATISATION OF METHANE AND MIXTURES CONTAINING METHANE - The present invention relates to a catalyst for dehydroaromatizing C | 05-26-2011 |
20110303550 | PROCESS FOR CONVERTING NATURAL GAS TO AROMATICS WITH ELECTROCHEMICAL REMOVAL OF HYDROGEN TO GENERATE ELECTRICAL POWER AND OBTAIN HYDROGEN - The present invention relates to a process for converting aliphatic hydrocarbons having 1 to 4 carbon atoms to aromatic hydrocarbons, comprising the steps of:
| 12-15-2011 |
20120004482 | METHOD FOR REACTING NATURAL GAS TO AROMATICS WHILE ELECTROCHEMICALLY REMOVING HYDROGEN AND ELECTROCHEMICALLY REACTING THE HYDROGEN WATER - The invention relates to a process for converting aliphatic hydrocarbons having from 1 to 4 carbon atoms into aromatic hydrocarbons, which comprises the steps:
| 01-05-2012 |
20120012467 | PROCESS FOR CONVERTING NATURAL GAS TO AROMATICS WITH ELECTROCHEMICAL REMOVAL OF HYDROGEN - The present invention relates to a process for converting aliphatic hydrocarbons having 1 to 4 carbon atoms to aromatic hydrocarbons in the presence of a catalyst under nonoxidative conditions, wherein at least some of the hydrogen formed in the conversion electrochemically removed is by means of a gas-tight membrane-electrode assembly. | 01-19-2012 |
20120012471 | METHOD FOR ELECTROCHEMICALLY REMOVING HYDROGEN FROM A REACTION MIXTURE - The invention relates to a process for the electrochemical separation of hydrogen from a hydrogen-comprising reaction mixture R by means of a gastight membrane-electrode assembly comprising at least one selectively proton-conducting membrane and at least one electrode catalyst on each side of the membrane, where at least part of the hydrogen present in the reaction mixture R is oxidized to protons over the anode catalyst on the retentate side of the membrane and the protons are, after passing through the membrane to the permeate side, | 01-19-2012 |
20120022310 | PROCESS FOR PREPARING AROMATICS FROM METHANE - The present invention relates to a process for carrying out endothermic, heterogeneously catalyzed reactions in which the reaction of the starting materials is carried out in the presence of a mixture of inert heat transfer particles and catalyst particles, where the catalyst particles are regenerated in a nonoxidative atmosphere at regular intervals and the heat of reaction required is introduced by separating off the inert heat transfer particles, heating the heat transfer particles in a heating zone and recirculating the heated heat transfer particles to the reaction zone. The process of the invention is particularly suitable for the nonoxidative dehydroaromatization of C | 01-26-2012 |
20120071692 | PROCESS FOR THE PREPARATION OF AROMATIC AMINES - A process for preparing an aromatic amine by reacting a corresponding aromatic alcohol with an aminating agent selected from the group consisting of ammonia, primary amines and secondary amines, in the presence of hydrogen and a catalyst molding, at a temperature of from 60-300°. The catalyst molding comprises Zr, Pd and Pt and has an annular tablet form with an external diameter in the range from 2-6 mm, a height in the range from 1-4 mm and an internal diameter of from 1-5 mm or a topologically equivalent form with the same volume. Catalyst moldings comprising Zr, Pd and Pt are also provided. The catalyst molding has an annular tablet form with an external diameter in the range from 3-6 mm, a height in the range from 1-4 mm and an internal diameter of from 2-5 mm or a topologically equivalent form. | 03-22-2012 |
20120101303 | METHYL-SUBSTITUTED TETA COMPOUNDS - The invention relates to a process for preparing triethylenetetramine substituted by at least one methyl group (Me-TETA or methyl-substituted TETA compounds). Me-TETA is prepared by hydrogenating biscyanomethylimidazolidine (BCMI) in the presence of a catalyst. The present invention further relates to methyl-substituted TETA compounds as such. The present invention further relates to the use of methyl-substituted TETA compounds as a reactant or intermediate in the production of, for example, coatings or adhesives. | 04-26-2012 |
20120165585 | PROCESS FOR PREPARING BENZENE FROM METHANE - The present invention relates to a process for nonoxidatively dehydroaromatizing a reactant stream comprising C | 06-28-2012 |
20120203045 | PROCESS FOR PRODUCING AN SI-BONDED FLUIDIZED-BED CATALYST - The invention relates to a process for producing a particulate, Si-bonded fluidized-bed catalyst having improved abrasion resistance, which comprises the steps
| 08-09-2012 |
20130053536 | PROCESS FOR PREPARING EDDN AND/OR EDMN AND A PROCESS FOR PREPARING DETA AND/OR TETA - A process for preparing EDDN and/or EDMN by
| 02-28-2013 |
20130053537 | PROCESS FOR REGENERATING RANEY CATALYSTS - A process for regenerating Raney catalysts by treating the catalyst with liquid ammonia with a water content of less than 5% by weight and with hydrogen having a partial pressure of 0.1 to 40 MPa in the temperature range from 50 to 350° C. for at least 0.1 hour. | 02-28-2013 |
20130053538 | PROCESS FOR PREPARING EDFA AND/OR EDMFA AND DETA AND/OR TETA - A process for reacting ethylenediamine (EDA) with formaldehyde to give ethylenediamine-formaldehyde adduct (EDFA) and/or ethylenediamine-monoformaldehyde adduct (EDMFA), which comprises performing the reaction of FA with EDA at a temperature in the range from 20 to 70° C. | 02-28-2013 |
20130053539 | PROCESS FOR PREPARING EDDN AND/OR EDMN AND PROCESS FOR PREPARING DETA AND/OR TETA - A process for preparing EDDN and/or EDMN by conversion of FA, HCN and EDA, the reaction being effected in the presence of water, wherein the reaction mixture from the conversion of EDA, HCN and FA is cooled after leaving the reactor. | 02-28-2013 |
20130053540 | PROCESS FOR PREPARING TETA - A process for preparing TETA and/or DETA by the action of EDDN and/or EDMN with hydrogen in the presence of a catalyst, wherein the catalyst used is a catalyst of the Raney type and the pressure in the course of hydrogenation is in the range from 170 to 240 bar. | 02-28-2013 |
20130053584 | PROCESS FOR PREPARING EDDN AND/OR EDMN BY REACTING EDFA AND/OR EDMFA WITH HCN - A process for reacting ethylenediamine-formaldehyde adduct (EDFA) and/or ethylene-diamine-monoformaldehyde adduct (EDMFA) with hydrogen cyanide (HCN) in a reactor with limited backmixing at a temperature in the range from 20 to 120° C., wherein the residence time in the reactor is 300 seconds or less. | 02-28-2013 |
20130053597 | PROCESS FOR PREPARING EDDN, EDMN, TETA AND DETA - A process for preparing ethylenediaminediacetonitrile (EDDN) and/or ethylenediamine-monoacetonitrile (EDMN) by conversion of formaldehyde (FA), hydrogen cyanide (HCN) and ethylenediamine (EDA), which comprises using stabilizer-free HCN, or HCN which has been stabilized with an organic acid, in the process. | 02-28-2013 |
20130060002 | PROCESS FOR WORKING UP REACTION OUTPUTS FROM THE HYDROGENATION OF EDDN OR EDMN - A process is disclosed for separating the output from the reaction of EDDN or EDMN with hydrogen in the presence of THF, a catalyst, TETA or DETA, water, and optionally organic compounds having higher and lower boiling points than TETA or DETA. Hydrogen is removed, and the output is supplied to a distillation column DK1 in which an azeotrope, optionally comprising organic compounds with a boiling point lower than TETA or DETA, is removed from the top. A product comprising TETA or DETA is removed from the bottom and passed cinto a distillation column DK2, removing THF. A stream comprising TETA or DETA passes from the bottom of DK2. The DK1 azeotrope is condensed. Phase separation is induced by the addition of an organic solvent essentially immiscible with water, and the mixture is separated. The organic phase is recycled into DK1 and the water phase is discharged. | 03-07-2013 |
20130079492 | PROCESS FOR PREPARING EDDN AND EDMN - A process for preparing EDDN and/or EDMN by conversion of FA, HCN and EDA, the reaction being effected in the presence of water, and, after the conversion, water being depleted from the reaction mixture in a distillation column, which comprises performing the distillation in the presence of an organic solvent which has a boiling point between water and EDDN and/or EDMN at the distillation pressure existing in the column or which forms a low-boiling azeotrope with water. | 03-28-2013 |
20130085286 | Unknown - A process for preparing amines of the formula (II) | 04-04-2013 |
20130090452 | PROCESS FOR PREPARING EDDN AND/OR EDMN BY CONVERSION OF FACH AND EDA - A process for reacting formaldehyde cyanohydrin (FACH) with ethylenediamine (EDA) in a reactor with limited backmixing at a temperature in the range from 20 to 120° C., wherein the residence time in the reactor is 300 seconds or less. | 04-11-2013 |
20130090453 | Process for preparing TETA and DETA - A process for preparing TETA and/or DETA by hydrogenating EDDN and/or EDMN with hydrogen in the presence of a catalyst, which comprises preparing EDDN and/or EDMN from FA, HCN and EDA in the presence of toluene as a solvent and performing the hydrogenation in suspension mode in the presence of THF. | 04-11-2013 |
20130296159 | ZEOLITIC MATERIALS AND METHODS FOR THEIR PREPARATION USING ALKENYLTRIALKYLAMMONIUM COMPOUNDS - The present invention relates to a process for the preparation of a zeolitic material comprising the steps of:
| 11-07-2013 |
20140039227 | PROCESS FOR SCRUBBING DINITROTOLUENE - The invention relates to a process for scrubbing a crude mixture comprising dinitrotoluene, nitric acid, nitrogen oxides and sulfuric acid obtained in the nitration of toluene after the nitrating acid has been separated off, which comprises two scrubbing steps (SS-I) and (SS-II), wherein
| 02-06-2014 |