| Patent application number | Description | Published |
|---|
| 20100189444 | OPTICAL MEMS DEVICE AND REMOTE SENSING SYSTEM UTILIZING THE SAME - A remote sensing system comprises a micro-electromechanical sensor (MEMS) device comprising an optical energy absorbing sensing element that resonates by thermal expansion induced by absorption of optical signals, a remotely located optical source for transmitting driving optical signals to induce resonation in the sensing element, and a remotely located reader circuitry to read an original frequency of the sensing element using reader optical signals for determining a condition to which the MEMS device is exposed. | 07-29-2010 |
| 20100243039 | LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A photovoltaic device is provided comprising a layer. The layer comprises a plurality of grains separated by grain boundaries wherein the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or of the opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the layer is also disclosed. | 09-30-2010 |
| 20100243056 | LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A photovoltaic device is provided comprising an absorber layer, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer is also disclosed. | 09-30-2010 |
| 20110100447 | LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A photovoltaic device is provided. The photovoltaic device comprises an absorber layer comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the absorber layer. The at least one layer comprises silicon. The at least one layer comprises a p+-type semiconductor. The absorber layer is substantially free of silicon. A method of forming the photovoltaic device is provided. | 05-05-2011 |
| 20110104398 | METHOD AND SYSTEM FOR DEPOSITING MULTIPLE MATERIALS ON A SUBSTRATE - A system for depositing two or more materials on a substrate is provided. The system comprises one or more susceptors configured to define two or more recesses for accommodating at least a first material and a second material respectively. The first and second materials are different. The system further comprises one or more heaters for heating the first material and the second material for sublimation of the first and second materials for deposition on the substrate. A method for depositing two or more materials on a substrate is also presented. | 05-05-2011 |
| 20110146744 | PHOTOVOLTAIC CELL - A photovoltaic (PV) cell is disclosed. The PV cell comprises a plurality of ultrafine structures embedded within a photo-active absorber layer comprising a n-type compound semiconductor. | 06-23-2011 |
| 20110146788 | PHOTOVOLTAIC CELL - A photovoltaic (PV) cell is disclosed. The PV cell comprises, a plurality of ultrafine structures electrically coupled to, and embedded within, a polycrystalline photo-active absorber layer comprising a p-type compound semiconductor. | 06-23-2011 |
| 20110153228 | PHOTON IMAGING SYSTEM FOR DETECTING DEFECTS IN PHOTOVOLTAIC DEVICES, AND METHOD THEREOF - A method includes supplying current to at least one photovoltaic device via a current source and detecting emitted photon radiations from the at least one photovoltaic device via a radiation detector. The method also includes outputting a signal corresponding to the detected emitted photon radiations from the radiation detector to a processor device, and processing the signal corresponding to the detected emitted photon radiations via the processor device to generate one or more two-dimensional photon images. The method further includes analyzing the one or more two-dimensional photon images to determine at least one defect in the at least one photovoltaic device. | 06-23-2011 |
| 20110299807 | OPTICAL SENSORS AND METHODS OF MAKING THE SAME - A sensor is provided. The sensor includes a substrate, a waveguide having a first surface and a second surface, wherein the waveguide is disposed on the substrate such that at least a portion of the second surface of the waveguide is in physical contact with the substrate, a holder component disposed on at least a portion of the substrate, or the waveguide, or both, wherein the holder component comprises one or more cavities. The sensor further includes at least one microsphere at least partially disposed in a corresponding cavity of the holder component. | 12-08-2011 |
| 20110315220 | PHOTOVOLTAIC CELL AND METHODS FOR FORMING A BACK CONTACT FOR A PHOTOVOLTAIC CELL - Methods are provided for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer. One method includes depositing at least one back contact material on a metal contact. The back contact material comprises a metal nitride or a metal phosphide. The method further includes depositing an absorber layer comprising cadmium and tellurium above the back contact material and thermally processing the back contact material, such that the back contact material interacts with the absorber layer to form an interlayer that lowers a contact resistance for the photovoltaic cell. A photovoltaic cell is also provided and includes comprising a metal contact, at least one back contact material disposed on the metal contact, and an absorber layer comprising a material comprising cadmium and tellurium disposed above the back contact material. An interlayer is disposed between the back contact material and the absorber layer and comprises a compositionally graded layer of the back contact material and the absorber layer material. The photovoltaic cell further includes a window layer disposed above the absorber layer. | 12-29-2011 |
| 20120024360 | PHOTOVOLTAIC DEVICE - A photovoltaic device is provided. The device comprises a transparent conducting layer. A p-type semiconductor window layer is disposed over the n-type transparent conducting layer. An n-type semiconductor layer is disposed over the p-type semiconductor window layer. An n-type cadmium telluride absorber layer is disposed between the p-type semiconductor window layer and the n-type semiconductor layer. | 02-02-2012 |
