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Agui
Ryouko Agui, Ashigarakami-Gun JP
| Patent application number | Description | Published |
|---|---|---|
| 20110186124 | ELECTRICALLY CONDUCTIVE ZINC OXIDE LAYERED FILM AND PHOTOELECTRIC CONVERSION DEVICE COMPRISING THE SAME - An electrically conductive zinc oxide layered film having been formed on a substrate, at least a surface of the substrate being electrically non-conductive, comprises: (i) an electrically conductive zinc oxide fine particle layer, which is formed on the electrically non-conductive surface of the substrate, and which comprises at least one kind of a plurality of fine particles containing electrically conductive zinc oxide as a principal ingredient, and (ii) an electrically conductive zinc oxide thin film layer, which is formed on the electrically conductive zinc oxide fine particle layer. | 08-04-2011 |
| 20110186125 | PROCESS FOR PRODUCING ELECTRICALLY CONDUCTIVE ZINC OXIDE LAYERED FILMS AND PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICES - For production of an electrically conductive zinc oxide layered film, a substrate, at least a surface of the substrate being electrically non-conductive, is prepared. An underlayer is formed with a coating technique on the electrically non-conductive surface of the substrate, the underlayer comprising at least one kind of a plurality of fine particles containing electrically conductive zinc oxide as a principal ingredient. An electrically conductive zinc oxide thin film layer is formed with a chemical bath deposition technique on the underlayer. | 08-04-2011 |
| 20110189814 | PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICES - In a process for producing a photoelectric conversion device comprising a bottom electrode layer, a photoelectric conversion semiconductor layer, a buffer layer, and a transparent conductive layer, which are stacked in this order on a substrate, all film forming stages ranging from a stage of forming the buffer layer to a stage of forming the transparent conductive layer are performed with a liquid phase technique. The buffer layer is formed with a chemical bath deposition technique, and the transparent conductive layer is formed with an electrolytic deposition technique. | 08-04-2011 |
Takaaki Agui, Yamatokoriyama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100279456 | Compound solar and manufacturing method thereof - On a surface of a GaAs substrate, layers to be a top cell are formed by epitaxial growth. On the top cell, layers to be a bottom cell are formed. Thereafter, on a surface of the bottom cell, a back surface electrode is formed. Thereafter, a glass plate is adhered to the back surface electrode by wax. Then, the GaAs substrate supported by the glass plate is dipped in an alkali solution, whereby the GaAs substrate is removed. Thereafter, a surface electrode is formed on the top cell. Finally the glass plate is separated from the back surface electrode. In this manner, a compound solar battery that improves efficiency of conversion to electric energy can be obtained. | 11-04-2010 |
Takaaki Agui, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20110290312 | COMPOUND SEMICONDUCTOR SOLAR BATTERY AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SOLAR BATTERY - A compound semiconductor solar battery including a first compound semiconductor photoelectric conversion cell, a second compound semiconductor photoelectric conversion cell provided on the first compound semiconductor photoelectric conversion cell, and a compound semiconductor buffer layer provided between the first compound semiconductor photoelectric conversion cell and the second compound semiconductor photoelectric conversion cell, the first compound semiconductor photoelectric conversion cell and the compound semiconductor buffer layer being provided adjacent to each other, and a ratio of a difference in lattice constant between the first compound semiconductor photoelectric conversion cell and a compound semiconductor layer provided in a position closest to the first compound semiconductor photoelectric conversion cell among compound semiconductor layers constituting the compound semiconductor buffer layer being not less than 0.15% and not more than 0.74%, and a method for manufacturing the same are provided. | 12-01-2011 |