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Agnello, US
David Paul Agnello, Wappingers Falls, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080296706 | COBALT DISILICIDE STRUCTURE - A structure. The structure may include a layer of cobalt disilicide that is substantially free of cobalt monosilicide and there is substantially no stringer of an oxide of titanium on the layer of cobalt disilicide. The structure may include a substrate that includes: an insulated-gate field effect transistor (FET) that includes a source, a drain, and a gate; a first layer of cobalt disilicide on the source, said first layer having substantially no cobalt monosilicide, and said first layer having substantially no stringer of an oxide of titanium thereon; a second layer of cobalt disilicide on the drain, said second layer having substantially no cobalt monosilicide having substantially no stringer of an oxide of titanium thereon; and a third layer of cobalt disilicide on the gate, said third layer having substantially no cobalt monosilicide and having substantially no stringer of an oxide of titanium thereon. | 12-04-2008 |
Frank Agnello, South Elgin, IL US
| Patent application number | Description | Published |
|---|---|---|
| 20110303100 | Conveyor Toaster with Air-Cooled Panels - A conveyorized toaster oven for cooking flat breads, pita and the like uses infrared energy, which raises interior temperatures of the oven. A metallic shell is formed around the oven, which defines an air duct. A blower is configured to force air through the duct to remove heat energy from the exterior surface of the oven cabinet. | 12-15-2011 |
Frank Anthony Agnello, South Elgin, IL US
| Patent application number | Description | Published |
|---|---|---|
| 20080236564 | WIRE MESH BURNER PLATE FOR A GAS OVEN BURNER - A wire mesh burner plate for use in large, gas burners for large ovens is comprised of spaced-apart wire mesh plates. The spacing between the wire mesh plates defines an air/fuel mixture space. The fuel passes through the lower or first mesh, experiences a pressure drop, mixes with air and passes through a second wire mesh. The gas combusts after passing through the second wire mesh. The fine gauge of the mesh prevents combustion from flowing backwardly into the fuel/air mixture space. Several individual wire mesh burner plates can be flexibly attached to each other such that a very wide space can be covered. Thermal stresses are reduced by being distributed across multiple burners. | 10-02-2008 |
| 20080241776 | INFRARED EMITTING GAS BURNER - A gas burner for an infrared oven provides fast and controllable infrared energy, the emitted spectrum of which varies continuously over a wide spectrum. The burner is assembled from an elongated fuel distribution chamber having an open top and into which a gaseous fuel and combustion air is introduced. As the fuel mixture is delivered into the fuel distribution chamber, it eventually fills the chamber and thereafter flow through a double-layer wire mesh burner plate set over the fuel distribution chamber. The fuel combusts above the wire mesh burner plates to heat a screen wire above the burner plates. The screen wire is heated to a temperature at which the screen wire emits IR. The emitted IR wavelength can be controlled by controlling the gas supply to turn the combustion on and off according to the amount of IR heated needed. | 10-02-2008 |
| 20080264406 | CONVEYOR OVEN WITH HYBRID HEATING SOURCES - A conveyor oven is provided with both electric and gas-fired infrared heaters. The heat output from the gas fired infrared heater is controlled by cycling or pulsing the gas supply to one or more burners that emit infrared heat by heating a nichrome screen wire. | 10-30-2008 |
| 20080283041 | METHOD OF CONTROLLING AN OVEN WITH HYBRID HEATING SOURCES - Cooking food in a hybrid conveyor with both electric and gas-fired infrared heaters. The heat output from the gas fired infrared heater is controlled by cycling or pulsing the gas supply to one or more burners that emit infrared heat by heating a nichrome screen wire. The electric power supplied to electrically powered heaters is also controlled. | 11-20-2008 |
| 20090034944 | CONVEYOR OVEN WITH MULTIPLE HEATING ZONES - Multiple top-mounted heaters and at least one bottom heater define multiple heating/cooking zones in a conveyor oven. The top-mounted heaters output different energy levels and thereby define heating/cooking zones whereat foods are cooked differently. By using multiple bottom-mounted heaters, thermal separation of the heating zones can be further enhanced. Liquids, such as air, water, oil or a combination of all three can be sprayed onto foods during the cooking process to control cooking. | 02-05-2009 |
| 20100190123 | Burner Plate Assembly for a Gas Oven - A wire mesh burner plate for use in large, gas burners for large ovens is comprised of spaced-apart wire mesh plates. The spacing between the wire mesh plates defines an air/fuel mixture space. The fuel passes through the lower or first mesh, experiences a pressure drop, mixes with air and passes through a second wire mesh. The gas combusts after passing through the second wire mesh. The fine gauge of the mesh prevents combustion from flowing backwardly into the fuel/air mixture space. Several individual wire mesh burner plates can be flexibly attached to each other such that a very wide space can be covered. Thermal stresses are reduced by being distributed across multiple burners. | 07-29-2010 |
Joseph Agnello, Grand Island, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20090315196 | DEVICE FOR GAS-LIQUID CONTACTING - One exemplary embodiment can be a device for a gas-liquid contacting apparatus. The gas-liquid contacting apparatus can include a member. The member can include: | 12-24-2009 |
| 20100242730 | CONTACTING STAGES FOR CO-CURRENT CONTACTING APPARATUSES - Improved contacting stages for carrying out vapor-liquid contacting are described. Particular aspects are directed to co-current vapor-liquid contacting devices with non-parallel contacting stages that provide an efficient usage of column space for fluid flow and contacting, in order to achieve high capacity, high efficiency, and low pressure drop. The fabrication of such contacting stages is improved using one or more structural enhancements, preferably a combination of enhancements, to achieve easy installation and significantly improved rigidity between the various parts and thereby avoid movement/separation of these parts. This reduces the possibility of fluid leakage across, and consequently vapor and/or liquid bypassing of, the contacting stage. | 09-30-2010 |
Paul D. Agnello, Wappingers Falls, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080303070 | PREVENTING CAVITATION IN HIGH ASPECT RATIO DIELECTRIC REGIONS OF SEMICONDUCTOR DEVICE - Methods for preventing cavitation in high aspect ratio dielectric regions in a semiconductor device, and the device so formed, are disclosed. The invention includes depositing a first dielectric in the high aspect ratio dielectric region between a pair of structures, and then removing the first dielectric to form a bearing surface adjacent each structure. The bearing surface prevents cavitation of the interlayer dielectric that subsequently fills the high aspect ratio region. | 12-11-2008 |
Paul David Agnello, Wappingers Falls, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20090108302 | MULTIPLE CRYSTALLOGRAPHIC ORIENTATION SEMICONDUCTOR STRUCTURES - A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant polarity and different second crystallographic orientation. The epitaxial surface semiconductor layer has a first edge that has a defect and an adjoining second edge absent a defect. Located within the epitaxial surface semiconductor layer is a first device having a first gate perpendicular to the first edge and a second device having a second gate perpendicular to the second edge. The first device may comprise a performance sensitive logic device and the second device may comprise a yield sensitive memory device. An additional semiconductor structure includes a further laterally adjacent second semiconductor-on-insulator surface semiconductor layer having the first polarity and the second crystallographic orientation, and absent edge defects, to accommodate yield sensitive devices. | 04-30-2009 |
| 20100197118 | MULTIPLE CRYSTALLOGRAPHIC ORIENTATION SEMICONDUCTOR STRUCTURES - A semiconductor structure includes an epitaxial surface semiconductor layer having a first dopant polarity and a first crystallographic orientation, and a laterally adjacent semiconductor-on-insulator surface semiconductor layer having a different second dopant polarity and different second crystallographic orientation. The epitaxial surface semiconductor layer has a first edge that has a defect and an adjoining second edge absent a defect. Located within the epitaxial surface semiconductor layer is a first device having a first gate perpendicular to the first edge and a second device having a second gate perpendicular to the second edge. The first device may include a performance sensitive logic device and the second device may include a yield sensitive memory device. An additional semiconductor structure includes a further laterally adjacent second semiconductor-on-insulator surface semiconductor layer having the first polarity and the second crystallographic orientation, and absent edge defects, to accommodate yield sensitive devices. | 08-05-2010 |
Vincent Agnello, Weston, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20080213287 | Method of inhibiting infection by HCV, other flaviviridae viruses, and any other virus that complexes to low density lipoprotein or to very low density lipoprotein in blood preventing viral entry into a cell - A method of inhibiting infection by Flaviviridae viruses including HCV, GBC/HGV, and BVD in addition to VSV and any other virus capable of forming a complex with a lipoprotein strategies: preventing formation of a complex should one form, altering the conformation of such a complex to prevent its interaction with the cell receptor, blocking the cell receptor for the complex using an antibody to the receptor, blocking binding of the lipoprotein complex to the cell receptor using soluble lipoprotein receptor or fragments thereof, or downregulating the LDL receptor activity of the cells. | 09-04-2008 |
| 20110229482 | Method of inhibiting infection by HCV, other flaviviridae viruses, and any other virus that complexes to low density lipoprotein or to very low density lipoprotein in blood by preventing viral entry into a cell - A method of inhibiting infection by Flaviviridae viruses including HCV, GBC/HGV, and BVD in addition to VSV and any other virus capable of forming a complex with a lipoprotein strategies: preventing formation of a complex should one form, altering the conformation of such a complex to prevent its interaction with the cell receptor, blocking the cell receptor for the complex using an antibody to the receptor, blocking binding of the lipoprotein complex to the cell receptor using soluble lipoprotein receptor or fragments thereof, or downregulating the LDL receptor activity of the cells. | 09-22-2011 |