Patent application number | Description | Published |
20090146154 | Transistor with A-Face Conductive Channel and Trench Protecting Well Region - A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state. The AMOSFET further shows high voltage blocking ability due to the addition of a highly doped well region that protects the gate corner region in a trench-gated device. The AMOSFET uses the A-face conduction along a trench sidewall in addition to a buried channel layer extending across portions of the semiconductor mesas defining the trench. A doped well extends from at least one of the mesas to a depth within the current spreading layer that is greater than the depth of the trench. A current spreading layer extends between the semiconductor mesas beneath the bottom of the trench to reduce junction resistance in the on-state. A buffer layer between the trench and the deep well further provides protection from field crowding at the trench corner. | 06-11-2009 |
20090189228 | SEMICONDUCTOR TRANSISTOR WITH P TYPE RE-GROWN CHANNEL LAYER - The invention is a device for controlling conduction across a semiconductor body with a P type channel layer between active semiconductor regions of the device and the controlling gate contact. The device, often a MOSFET or an IGBT, includes at least one source, well, and drift region. The P type channel layer may be divided into sections, or divided regions, that have been doped to exhibit N type conductivity. By dividing the channel layer into regions of different conductivity, the channel layer allows better control over the threshold voltage that regulates current through the device. Accordingly, one of the divided regions in the channel layer is a threshold voltage regulating region. The threshold-voltage regulating region maintains its original P type conductivity and is available in the transistor for a gate voltage to invert a conductive zone therein. The conductive zone becomes the voltage regulated conductive channel within the device. | 07-30-2009 |
20090233418 | Methods of Processing Semiconductor Wafers Having Silicon Carbide Power Devices Thereon - Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device. | 09-17-2009 |
20090315036 | SEMICONDUCTOR DEVICES INCLUDING SCHOTTKY DIODES HAVING DOPED REGIONS ARRANGED AS ISLANDS AND METHODS OF FABRICATING SAME - A semiconductor device according to some embodiments includes a semiconductor layer having a first conductivity type and a surface in which an active region of the semiconductor device is defined. A plurality of spaced apart first doped regions are arranged within the active region. The plurality of first doped regions have a second conductivity type that is opposite the first conductivity type, have a first dopant concentration, and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of first doped regions are arranged as islands in the semiconductor layer. A second doped region in the semiconductor layer has the second conductivity type and has a second dopant concentration that is greater than the first dopant concentration. | 12-24-2009 |
20100090271 | Power Switching Semiconductor Devices Including Rectifying Junction-Shunts - A semiconductor device includes a drift layer having a first conductivity type and a body region adjacent the drift layer. The body region has a second conductivity type opposite the first conductivity type and forms a p-n junction with the drift layer. The device further includes a contactor region in the body region and having the first conductivity type, and a shunt channel region extending through the body region from the contactor region to the drift layer. The shunt channel region has the first conductivity type. The device further includes a first terminal in electrical contact with the body region and the contactor region, and a second terminal in electrical contact with the drift layer. The shunt channel region has a length, thickness and doping concentration selected such that: 1) the shunt channel region is fully depleted when zero voltage is applied across the first and second terminals, 2) the shunt channel becomes conductive at a voltages less than the built-in potential of the drift layer to body region p-n junction, and/or 3) the shunt channel is not conductive for voltages that reverse biase the p-n junction between the drift region and the body region. | 04-15-2010 |
20100133550 | STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS - A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a < | 06-03-2010 |
20110250737 | TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WELL REGION - A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state. The AMOSFET further shows high voltage blocking ability due to the addition of a highly doped well region that protects the gate corner region in a trench-gated device. The AMOSFET uses the A-face conduction along a trench sidewall in addition to a buried channel layer extending across portions of the semiconductor mesas defining the trench. A doped well extends from at least one of the mesas to a depth within the current spreading layer that is greater than the depth of the trench. A current spreading layer extends between the semiconductor mesas beneath the bottom of the trench to reduce junction resistance in the on-state. A buffer layer between the trench and the deep well further provides protection from field crowding at the trench corner. | 10-13-2011 |
20120018737 | ELECTRONIC DEVICE STRUCTURE INCLUDING A BUFFER LAYER ON A BASE LAYER - Electronic device structures that compensate for non-uniform etching on a semiconductor wafer and methods of fabricating the same are disclosed. In one embodiment, the electronic device includes a number of layers including a semiconductor base layer of a first doping type formed of a desired semiconductor material, a semiconductor buffer layer on the base layer that is also formed of the desired semiconductor material, and one or more contact layers of a second doping type on the buffer layer. The one or more contact layers are etched to form a second contact region of the electronic device. The buffer layer reduces damage to the semiconductor base layer during fabrication of the electronic device. Preferably, a thickness of the semiconductor buffer layer is selected to compensate for over-etching due to non-uniform etching on a semiconductor wafer on which the electronic device is fabricated. | 01-26-2012 |
20120018738 | ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SURFACE PASSIVATION - Electronic device structures including semiconductor ledge layers for surface passivation and methods of manufacturing the same are disclosed. In one embodiment, the electronic device includes a number of semiconductor layers of a desired semiconductor material having alternating doping types. The semiconductor layers include a base layer of a first doping type that includes a highly doped well forming a first contact region of the electronic device and one or more contact layers of a second doping type on the base layer that have been etched to form a second contact region of the electronic device. The etching of the one or more contact layers causes substantial crystalline damage, and thus interface charge, on the surface of the base layer. In order to passivate the surface of the base layer, a semiconductor ledge layer of the semiconductor material is epitaxially grown on at least the surface of the base layer. | 01-26-2012 |
20120068263 | Power Switching Semiconductor Devices Including Rectifying Junction-Shunts - A semiconductor device includes a drift layer and a body region that forms a p-n junction with the drift layer. A contactor region is in the body region, and a shunt channel region extends through the body region from the contactor region to the drift layer. The shunt channel region has a length, thickness and doping concentration selected such that: 1) the shunt channel region is fully depleted when zero voltage is applied across the first and second terminals, 2) the shunt channel becomes conductive at a voltages less than the built-in potential of the drift layer to body region p-n junction, and/or 3) the shunt channel is not conductive for voltages that reverse bias the p-n junction between the drift region and the body region. | 03-22-2012 |
20120223330 | SEMICONDUCTOR DEVICE HAVING HIGH PERFORMANCE CHANNEL - Semiconductor devices having a high performance channel and method of fabrication thereof are disclosed. Preferably, the semiconductor devices are Metal-Oxide-Semiconductor (MOS) devices, and even more preferably the semiconductor devices are Silicon Carbide (SiC) MOS devices. In one embodiment, a semiconductor device includes a SiC substrate of a first conductivity type, a first well of a second conductivity type, a second well of the second conductivity type, and a surface diffused channel of the second conductivity type formed at the surface of semiconductor device between the first and second wells. A depth and doping concentration of the surface diffused channel are controlled to provide increased carrier mobility for the semiconductor device as compared to the same semiconductor device without the surface diffused channel region when in the on-state while retaining a turn-on, or threshold, voltage that provides normally-off behavior. | 09-06-2012 |
20120235164 | TRANSISTOR WITH A-FACE CONDUCTIVE CHANNEL AND TRENCH PROTECTING WELL REGION - A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on-state. The AMOSFET further shows high voltage blocking ability due to the addition of a highly doped well region that protects the gate corner region in a trench-gated device. The AMOSFET uses the A-face conduction along a trench sidewall in addition to a buried channel layer extending across portions of the semiconductor mesas defining the trench. A doped well extends from at least one of the mesas to a depth within the current spreading layer that is greater than the depth of the trench. A current spreading layer extends between the semiconductor mesas beneath the bottom of the trench to reduce junction resistance in the on-state. A buffer layer between the trench and the deep well further provides protection from field crowding at the trench corner. | 09-20-2012 |
20120280252 | Field Effect Transistor Devices with Low Source Resistance - A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region. | 11-08-2012 |
20120280270 | Field Effect Transistor Devices with Low Source Resistance - A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region. | 11-08-2012 |
20120292636 | SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL - A negative bevel edge termination for a Silicon Carbide (SiC) semiconductor device is disclosed. In one embodiment, the negative bevel edge termination includes multiple steps that approximate a smooth negative bevel edge termination at a desired slope. More specifically, in one embodiment, the negative bevel edge termination includes at least five steps, at least ten steps, or at least 15 steps. The desired slope is, in one embodiment, less than or equal to fifteen degrees. In one embodiment, the negative bevel edge termination results in a blocking voltage for the semiconductor device of at least 10 kilovolts (kV) or at least 12 kV. The semiconductor device is preferably, but not necessarily, a thyristor such as a power thyristor, a Bipolar Junction Transistor (BJT), an Insulated Gate Bipolar Transistor (IGBT), a U-channel Metal-Oxide-Semiconductor Field Effect Transistor (UMOSFET), or a PIN diode. | 11-22-2012 |
20120326163 | SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY AND DRY CHEMISTRY PROCESSES FOR FABRICATION THEREOF - Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device. | 12-27-2012 |
20120329216 | WET CHEMISTRY PROCESSES FOR FABRICATING A SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY - Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device. | 12-27-2012 |
20130034941 | FORMING SIC MOSFETS WITH HIGH CHANNEL MOBILITY BY TREATING THE OXIDE INTERFACE WITH CESIUM IONS - Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility. | 02-07-2013 |
20130062619 | EDGE TERMINATION STRUCTURE EMPLOYING RECESSES FOR EDGE TERMINATION ELEMENTS - Elements of an edge termination structure, such as multiple concentric guard rings, are effectively doped regions in a drift layer. To increase the depth of these doped regions, individual recesses may be formed in a surface of the drift layer where the elements of the edge termination structure are to be formed. Once the recesses are formed in the drift layer, these areas about and at the bottom of the recesses are doped to form the respective edge termination elements. | 03-14-2013 |
20130062620 | SCHOTTKY DIODE EMPLOYING RECESSES FOR ELEMENTS OF JUNCTION BARRIER ARRAY - The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the substrate. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of the junction barrier array are generally doped regions in the drift layer. To increase the depth of these doped regions, individual recesses may be formed in the surface of the drift layer where the elements of the junction barrier array are to be formed. Once the recesses are formed in the drift layer, areas about and at the bottom of the recesses are doped to form the respective elements of the junction barrier array. | 03-14-2013 |
20130062723 | SCHOTTKY DIODE - The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer. | 03-14-2013 |
20140264562 | Field Effect Transistor Devices with Regrown P-Layers - A transistor device includes a drift layer having a first conductivity type, a body layer on the drift layer, the body layer having a second conductivity type opposite the first conductivity type, and a source region on the body layer, the source region having the first conductivity type. The device further includes a trench extending through the source region and the body layer and into the drift layer, a channel layer on the inner sidewall of the trench, the channel layer having the second conductivity type and having an inner sidewall opposite an inner sidewall of the trench, a gate insulator on the inner sidewall of the channel layer, and a gate contact on the gate insulator. | 09-18-2014 |
20140264563 | Field Effect Transistor Devices with Protective Regions - A transistor device includes a first conductivity type drift layer, a second conductivity type first region in the drift layer, a body layer having the second conductivity type on the drift layer including the first region, a source layer on the body layer, and a body contact region that extends through the source layer and the body layer and into the first region. The transistor device further includes a trench through the source layer and the body layer and extending into the drift layer adjacent the first region. The trench has an inner sidewall facing away from the first region. A gate insulator is on the inner sidewall of the trench, and a gate contact is on the gate insulator. | 09-18-2014 |
20140264564 | Field Effect Transistor Devices with Buried Well Protection Regions - A method of forming a transistor device includes providing a drift layer having a first conductivity type, forming a first region in the drift layer, the first region having a second conductivity type that is opposite the first conductivity type, forming a body layer on the drift layer including the first region, forming a source layer on the body layer, forming a trench in the source layer and the body layer above the first region and extending into the first region, forming a gate insulator on the inner sidewall of the trench, and forming a gate contact on the gate insulator. | 09-18-2014 |
20140264579 | Field Effect Transistor Devices with Buried Well Regions and Epitaxial Layers - A method of forming a transistor device includes providing a drift layer having a first conductivity type and an upper surface, forming first regions in the drift layer and adjacent the upper surface, the first regions having a second conductivity type that is opposite the first conductivity type and being spaced apart from one another, forming a body layer on the drift layer including the source regions, forming spaced apart source regions in the body layer above respective ones of the first regions, forming a vertical conduction region in the body layer between the source regions, the vertical conduction region having the first conductivity type and defining channel regions in the body layer between the vertical conduction region and respective ones of the source regions, forming a gate insulator on the body layer, and forming a gate contact on the gate insulator. | 09-18-2014 |
Patent application number | Description | Published |
20140213265 | METHODS, SYSTEMS, AND COMPUTER READABLE MEDIA FOR TRACKING AND COMMUNICATING LONG TERM EVOLUTION (LTE) HANDSET COMMUNICATION CAPABILITY - The subject matter described herein includes methods, systems and computer readable media for tracking and communicating LTE handset communication capability. One method includes maintaining, in a signaling message routing node, an LTE communication capability database. The database includes identifiers associated with LTE communication capable handsets. The method further includes, intercepting, at the signaling message routing node, a request for routing information. The method further includes, determining, by the signaling message routing node using the LTE communication capability database, whether a B party number associated with the request for routing information is associated with an LTE communication capable handset. In response to determining that the B party number is associated with an LTE communication capable handset, the method includes, responding, by the routing node, to the request for routing information with an identifier for a node in an LTE network for providing LTE service to the LTE capable handset. | 07-31-2014 |
20140273968 | METHODS, SYSTEMS, AND COMPUTER READABLE MEDIA FOR PROVIDING A MULTI-NETWORK EQUIPMENT IDENTITY REGISTER - Methods, systems, and computer readable media for providing a multi-network equipment identity register are disclosed. According to one aspect, the subject matter described herein includes a system for providing a multi-network equipment identity register. A node in a telecommunications network receives from a requesting entity a request to check an identity of a user equipment, the request containing the identity of the user equipment, queries an EIR using the identity of the user equipment, receives a response from the EIR, and forwards the response to the requesting entity. The node includes first and second interfaces for receiving requests to check an identity of a user equipment in a first and second protocol, respectively, such that a user equipment that is blacklisted in a network that uses the first protocol is also blacklisted in a network that uses the second protocol. | 09-18-2014 |
20140287747 | METHODS, SYSTEMS, AND COMPUTER READABLE MEDIA FOR TRIGGERLESS CENTRALIZED LOCATION SERVER - Methods, systems, and computer readable media for providing a triggerless centralized location server are disclosed. According to one aspect, a system for providing a triggerless centralized location server includes multiple signaling message routing nodes configured to operate in a telecommunications network. Each routing node is configured to receive a signaling message having an intended destination, determine whether the received signaling message includes location information related to a subscriber, and, if so, extract the location information related to the subscriber, route the signaling message to the intended destination, and store the location information related to the subscriber in a centralized location database. The centralized location database is configured to receive a request for location information associated with a subscriber, and, in response to receiving the request, retrieve the location information associated with the subscriber from the database and provide the retrieved location information in response to the request. | 09-25-2014 |
20150089003 | SYSTEMS, METHODS, AND COMPUTER READABLE MEDIA FOR CONTROLLING SOCIAL NETWORKING SERVICE ORIGINATED MESSAGE TRAFFIC - Methods, systems, and computer readable media for controlling the delivery of a social networking service originated message directed to a mobile device are disclosed. According to one example, the method performed at a routing node includes intercepting a mobility management message that includes location information associated with a mobile device, storing the location information associated with the mobile device in a location database, and receiving a social networking service originated message directed to the mobile device, wherein the message includes media content. The method further includes extracting the location information associated with the mobile device from the location database and delivering the media content to the mobile device using the extracted location information from the location database. | 03-26-2015 |
Patent application number | Description | Published |
20090144852 | AXMI-066 AND AXMI-076: DELTA-ENDOTOXIN PROTEINS AND METHODS FOR THEIR USE - Compositions and methods for conferring pesticidal activity to bacteria, plants, plant cells, tissues and seeds are provided. Compositions comprising a coding sequence for pesticidal polypeptides are provided. The coding sequences can be used in DNA constructs or expression cassettes for transformation and expression in plants and bacteria. Compositions also comprise transformed bacteria, plants, plant cells, tissues, and seeds. In particular, isolated pesticidal nucleic acid molecules are provided. Additionally, amino acid sequences corresponding to the polynucleotides are encompassed. In particular, the present invention provides for isolated nucleic acid molecules comprising nucleotide sequences encoding the amino acid sequence shown in SEQ ID NO:5, 2, or 10, the nucleotide sequence set forth in SEQ ID NO:4, 1, 3, 4, 6, 9, or 11, or the nucleotide sequence deposited in a bacterial host as Accession No. B-50045, as well as variants and fragments thereof. | 06-04-2009 |
20090181116 | AXMI-031, AXMI-039, AXMI-040 AND AXMI-049, A FAMILY OF NOVEL DELTA-ENDOTOXIN GENES AND METHODS FOR THEIR USE - Compositions and methods for conferring pesticidal activity to bacteria, plants, plant cells, tissues and seeds are provided. Compositions comprising a coding sequence for a delta-endotoxin polypeptide are provided. The coding sequences can be used in DNA constructs or expression cassettes for transformation and expression in plants and bacteria. Compositions also comprise transformed bacteria, plants, plant cells, tissues, and seeds. In particular, isolated delta-endotoxin nucleic acid molecules are provided. Additionally, amino acid sequences corresponding to the polynucleotides are encompassed, and antibodies specifically binding to those amino acid sequences. In particular, the present invention provides for isolated nucleic acid molecules comprising nucleotide sequences encoding the amino acid sequence shown in SEQ ID NO:2, 4, 6, 8, 10, 12, 15, 17, 19, 21, 23, 25, 27, 29, 31, 33, 35, or 38, or the nucleotide sequence set forth in SEQ ID NO:1, 3, 5, 7, 9, 11, 14, 16, 18, 20, 22, 24, 26, 28, 30, 32, 34, or 37, as well as variants and fragments thereof. | 07-16-2009 |
20100004176 | AXMI-115, AXMI-113, AXMI-005, AXMI-163 AND AXMI-184: INSECTICIDAL PROTEINS AND METHODS FOR THEIR USE - Compositions and methods for conferring insecticidal activity to host cells are provided. Compositions comprising a coding sequence for a delta-endotoxin polypeptide are provided. The coding sequences can be used in DNA constructs or expression cassettes for transformation and expression in host cells. Compositions also comprise transformed host cells. In particular, isolated delta-endotoxin nucleic acid molecules are provided. Additionally, amino acid sequences corresponding to the polynucleotides are encompassed, and antibodies specifically binding to those amino acid sequences. In particular, the present invention provides for isolated nucleic acid molecules comprising nucleotide sequences encoding the amino acid sequence shown in SEQ ID NO:4, 5, 6, 13, or 14, or the nucleotide sequence set forth in SEQ ID NO:1, 2, 3, 11, or 12, as well as variants and fragments thereof. | 01-07-2010 |
20100005543 | TOXIN GENES AND METHODS FOR THEIR USE - Compositions and methods for conferring pesticidal activity to bacteria, plants, plant cells, tissues and seeds are provided. Compositions comprising a coding sequence for a delta-endotoxin polypeptide are provided. The coding sequences can be used in DNA constructs or expression cassettes for transformation and expression in plants and bacteria. Compositions also comprise transformed bacteria, plants, plant cells, tissues, and seeds. In particular, isolated delta-endotoxin nucleic acid molecules are provided. Additionally, amino acid sequences corresponding to the polynucleotides are encompassed, and antibodies specifically binding to those amino acid sequences. In particular, the present invention provides for isolated nucleic acid molecules comprising nucleotide sequences encoding the amino acid sequence shown in SEQ ID NO:61-121 and 133-141, or the nucleotide sequence set forth in SEQ ID NO:1-60, 124-132, and 142-283, as well as variants and fragments thereof. | 01-07-2010 |
20120167251 | AXMI-031, AXMI-039, AXMI-040 AND AXMI-049, A FAMILY OF NOVEL DELTA-ENDOTOXIN GENES AND METHODS FOR THEIR USE - Compositions and methods for conferring pesticidal activity to bacteria, plants, plant cells, tissues and seeds are provided. Compositions comprising a coding sequence for a delta-endotoxin polypeptide are provided. The coding sequences can be used in DNA constructs or expression cassettes for transformation and expression in plants and bacteria. Compositions also comprise transformed bacteria, plants, plant cells, tissues, and seeds. In particular, isolated delta-endotoxin nucleic acid molecules are provided. Additionally, amino acid sequences corresponding to the polynucleotides are encompassed, and antibodies specifically binding to those amino acid sequences. | 06-28-2012 |
20130104259 | AXMI-115, AXMI-113, AXMI-005, AXMI-163 AND AXMI-184: INSECTICIDAL PROTEINS AND METHODS FOR THEIR USE - Compositions and methods for conferring insecticidal activity to host cells are provided. Compositions comprising a coding sequence for a delta-endotoxin polypeptide are provided. The coding sequences can be used in DNA constructs or expression cassettes for transformation and expression in host cells. Compositions also comprise transformed host cells. In particular, isolated delta-endotoxin nucleic acid molecules are provided. Additionally, amino acid sequences corresponding to the polynucleotides are encompassed, and antibodies specifically binding to those amino acid sequences. In particular, the present invention provides for isolated nucleic acid molecules comprising nucleotide sequences encoding the amino acid sequence shown in SEQ ID NO:4, 5, 6, 13, or 14, or the nucleotide sequence set forth in SEQ ID NO:1, 2, 3, 11, or 12, as well as variants and fragments thereof. | 04-25-2013 |
20130310543 | TOXIN GENES AND METHODS FOR THEIR USE - Compositions and methods for conferring pesticidal activity to bacteria, plants, plant cells, tissues and seeds are provided. Compositions comprising a coding sequence for a delta-endotoxin polypeptide are provided. The coding sequences can be used in DNA constructs or expression cassettes for transformation and expression in plants and bacteria. Compositions also comprise transformed bacteria, plants, plant cells, tissues, and seeds. In particular, isolated delta-endotoxin nucleic acid molecules are provided. Additionally, amino acid sequences corresponding to the polynucleotides are encompassed, and antibodies specifically binding to those amino acid sequences. In particular, the present invention provides for isolated nucleic acid molecules comprising nucleotide sequences encoding the amino acid sequence shown in SEQ ID NO:61-121 and 133-141, or the nucleotide sequence set forth in SEQ ID NO:1-60, 124-132, and 142-283, as well as variants and fragments thereof. | 11-21-2013 |
Patent application number | Description | Published |
20110131096 | TARGETED ENROLLMENT - Embodiments of the invention relate to apparatuses and methods for providing targeted product offers to customers. For example, in one embodiment, a first entity sends a targeted offer to certain customers. The first entity uses a second entity to perform a service related to the offer, such as an enrollment service. The first entity sends a candidate file to the second entity, where the candidate file includes a list of customers that qualify for the offer. The first entity authenticates the customer and, when the customer expresses interest in the targeted offer, the first entity forwards the customer to the second entity along with customer identifying information so that the second entity can perform the related service. The second entity then verifies whether the transferred customer qualifies for the offer by comparing the customer information to the candidate file. If verified, the second entity can perform the service related to the offer for the customer. | 06-02-2011 |
20120030104 | PROCESSING IMAGES ASSOCIATED WITH THE REMOTE CAPTURE OF MULTIPLE DEPOSIT ITEMS - Embodiments of the present invention relate to methods and apparatuses for processing an image that shows multiple deposit items, where the image was captured by a remote capture device. For example, some embodiments provide a method that includes: (a) receiving an image that shows multiple deposit items, where the image was captured by a remote capture device; (b) determining that a first portion of the image is satisfactory for identifying deposit item information therein; (c) determining that a second portion of the image is unsatisfactory for identifying deposit item information therein; and (d) performing a function based at least partially on the determining that the second portion of the image is unsatisfactory for identifying deposit item information therein. In some embodiments, the function includes enhancing the second portion of the image. In other embodiments, the function includes prompting a user of the remote capture device to capture a second image to replace the second portion of the image. | 02-02-2012 |
20120030105 | ONLINE CHECK REGISTER USING CHECK IMAGING - Embodiments of the invention relate to systems, methods, and computer program products for maintaining an updated check register in connection with an online banking account of a payor that tracks pending check payments using check imaging technology. Some embodiments of the present invention provide a computer-implemented method including the following steps: receiving an image of at least a portion of a paper check, wherein the portion comprises an indication of an amount of money to be drawn on a financial account, processing the image to determine the amount, identifying the financial account, and recording the amount in connection with the financial account, wherein the recording step occurs prior to receiving any indication that the check has been presented for payment. In addition, the method may also include making the financial account with an indication of the pending payment available to be viewed by the payor. | 02-02-2012 |
20120030117 | REMOTE CAPTURE OF MULTIPLE DEPOSIT ITEMS - Embodiments of the present invention relate to methods and apparatuses for processing an image that shows multiple deposit items, where the image was captured by a remote capture device. For example, some embodiments provide a method that includes: (a) receiving an image that shows multiple deposit items, where the image was captured by a remote capture device; (b) identifying, based at least partially on the image, deposit item information associated with the multiple deposit items; and/or (c) crediting an account based at least partially on the deposit item information. | 02-02-2012 |
20120030118 | REMOTE CAPTURE OF MULTIPLE DEPOSIT ITEMS USING A GRID - Embodiments of the present invention relate to methods and apparatuses for processing an image that shows multiple deposit items, where the image was captured by a remote capture device. For example, some embodiments provide a method that includes: (a) displaying a grid on a display associated with a remote capture device, where the remote capture device is configured to capture an image that shows multiple deposit items, and where the grid comprises a plurality of grid portions; and (b) prompting a user of the remote capture device to arrange the multiple deposit items, or to position or operate the remote capture device, such that each of the deposit items in the multiple deposit items appears in a single grid portion of the display before the image is captured. | 02-02-2012 |
20120179609 | AUTOMATIC IMAGE ANALYSIS AND CAPTURE - In general terms, some embodiments of the present invention relate to methods and apparatuses for automatically analyzing and/or capturing an image of a deposit item for use in a deposit transaction. In some embodiments, a method is provided that includes: (a) generating, by a remote capture device, an image of a deposit item, where the generating the image is based at least partially on the deposit item being exposed to the remote capture device; (b) determining, automatically by the remote capture device, that the image is satisfactory for reading deposit item information from the image, where the deposit item information is associated with the deposit item; and (c) performing, automatically by the remote capture device, a predetermined action, where the performing the predetermined action is based at least partially on the determining that the image is satisfactory for reading deposit item information from the image. In some embodiments, the performing the predetermined action includes capturing, automatically by the remote capture device, the image of the deposit item. In other embodiments, the performing the predetermined action includes prompting, automatically by the remote capture device, a user of the remote capture device to capture the image. In some embodiments, the method occurs in substantially real-time and/or while the deposit item is being exposed to the remote capture device. | 07-12-2012 |