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Aga, JP
Fumiaki Aga, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090001572 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of the present invention includes a chip which has a pad; a bump electrode formed on the pad; and a wire whose stitch bonding is made on the bump electrode. The wire satisfies a condition: (modulus-of-elasticity/breaking strength per unit area)≧400. | 01-01-2009 |
Hajime Aga, Okayama JP
| Patent application number | Description | Published |
|---|---|---|
| 20090292116 | ANHYDROUS CRYSTALLINE Beta-MALTOSE, ITS PREPARATION AND USES - Objects of the present invention are to provide a novel anhydrous crystalline β-maltose, its preparation and uses. The present invention attains the above objects by providing an anhydrous crystalline β-maltose with a melting point of 154 to 159° C.; a process for producing the same, comprising a step of keeping hydrous crystalline β-maltose in an organic solvent at an ambient temperature or higher for the dehydration; and uses of the same. | 11-26-2009 |
| 20100222569 | POROUS CRYSTALLINE SACCHARIDE, ITS PREPARATION AND USES - An object of the present invention is to provide a crystalline saccharide having novel physical properties, a preparation and uses thereof. The present invention solves the above objects by providing a porous crystalline saccharide having a number of pores, a process for producing the same, comprising the step of keeping hydrous crystalline saccharide at an ambient temperature or higher in an organic solvent for the dehydration, and the use thereof. | 09-02-2010 |
Hiroji Aga, Annaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100120223 | METHOD FOR MANUFACTURING BONDED WAFER - The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided. | 05-13-2010 |
| 20110104870 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film. | 05-05-2011 |
| 20110151643 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer by forming an ion implanted layer in a bond wafer; bonding an ion implanted surface of the bond wafer to a surface of a base wafer directly or through a silicon oxide film; and performing a delamination heat treatment. After the formation of the ion implanted layer and before the bonding, a plasma treatment is carried out with respect to a bonding surface of at least one of the bond wafer and the base wafer. The delamination heat treatment is carried out at a fixed temperature by directly putting the bonded wafer into a heat-treating furnace whose furnace temperature is set to the fixed temperature less than 475° C. without a temperature increasing step. | 06-23-2011 |
Keigo Aga, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100215073 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device formed by easily mounting a light-emitting element onto a supporting base and a method of manufacturing the light-emitting device are provided. A light-emitting device includes: a supporting base including a depression section on a top surface thereof, the depression section having an inclined surface on a side wall thereof; a first light-emitting element arranged on a bottom surface of the depression section; and a second light-emitting element arranged on the first light-emitting element and the supporting base. | 08-26-2010 |
Masafumi Aga, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100090358 | PROCESS AND APPARATUS FOR PRODUCING OPTICAL RECORDING MEDIUM - To produce an optical recording medium having a good concavo-convex shape whereby optical information recording/retrieving is stabilized. | 04-15-2010 |
Yasuhiro Aga, Yamaguchi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100249396 | BENZAZEPINONE COMPOUND - The present invention relates to a benzazepinone compound represented by the following formula (I): | 09-30-2010 |