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Aderhold
Dirk Aderhold, Schwabsberg DE
Harry Aderhold, Oberlunkhofen CH
| Patent application number | Description | Published |
|---|---|---|
| 20080289516 | Method and Device for Strapping Goods - In a method to seal/lock a strap ( | 11-27-2008 |
James L. Aderhold, Wheaton, IL US
| Patent application number | Description | Published |
|---|---|---|
| 20080260611 | Method for direct oxidation of hydrogen sulfide to elemental sulfur at low temperatures - A method for removal of hydrogen sulfide and mercury from a gaseous stream containing hydrogen sulfide and mercury in which a hydrogen sulfide conversion catalyst is contacted with the gaseous stream at a temperature less than or equal to the dewpoint of elemental sulfur, and the hydrogen sulfide is oxidized, forming elemental sulfur. | 10-23-2008 |
Jochen Aderhold, Hannover DE
| Patent application number | Description | Published |
|---|---|---|
| 20100164132 | METHOD FOR THE DETECTION OF PROCESS PARAMETERS, AND WOOD PRODUCT - The invention relates to a method for detecting process parameters when making wood products ( | 07-01-2010 |
Jochen Aderhold, Bundesrepublik DE
| Patent application number | Description | Published |
|---|---|---|
| 20100303624 | METHOD FOR TESTING A ROTOR BLADE OF A WIND POWER PLANT AND TEST DEVICE - The invention relates to a method for testing a rotor blade ( | 12-02-2010 |
Wolfgang Aderhold, Cupertino, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090041443 | Backside Rapid Thermal Processing of Patterned Wafers - Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector. | 02-12-2009 |
| 20100008656 | RAPID THERMAL PROCESSING CHAMBER WITH SHOWER HEAD - Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly. | 01-14-2010 |
| 20100124249 | TEMPERATURE UNIFORMITY MEASUREMENT DURING THERMAL PROCESSING - Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber. | 05-20-2010 |
| 20100133257 | Rapid Thermal Processing Chamber With Micro-Positioning System - Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support. | 06-03-2010 |
| 20110123178 | Apparatus and Method for Enhancing the Cool Down of Radiatively Heated Substrates - The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a dynamic heat sink that is substantially transparent to light from a radiant heat source, the dynamic heat sink being positioned near the substrate so the two are coupled. Additional embodiments of the invention are directed to methods of processing a substrate using the apparatuses described. | 05-26-2011 |
Wolfgang R. Aderhold, Cupertino, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090274454 | SYSTEM FOR NON RADIAL TEMPERATURE CONTROL FOR ROTATING SUBSTRATES - Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume. | 11-05-2009 |
| 20100193154 | RAPID COOLING OF A SUBSTRATE BY MOTION - Methods for cooling a substrate are provided herein. In some embodiments, a method for cooling a substrate includes heating a substrate in a process chamber from an introductory temperature to a peak temperature of greater than about 900 degrees Celsius; and cooling the substrate from within about 50 degrees Celsius of the peak temperature by moving the substrate at a rate of at least about 3 millimeters/second in a direction normal to an upper surface of the substrate. In some embodiments, cooling the substrate by moving the substrate further comprises moving the substrate to a first position having a first distance from an upper surface of the process chamber; and subsequently moving the substrate to a second position having a second distance that is further away from the upper surface than the first distance. In some embodiments, a residence time proximate the peak temperature is about 0.6 seconds or less. | 08-05-2010 |