Adekore, MA
Bunmi Adekore, Medford, MA US
Patent application number | Description | Published |
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20090042344 | InP-Based Transistor Fabrication - Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP. | 02-12-2009 |
20130040431 | InP-Based Transistor Fabrication - Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP. | 02-14-2013 |
Bunmi T. Adekore, Arlington, MA US
Patent application number | Description | Published |
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20090240299 | DEVICE AND METHOD FOR REFLEX CARDIAC PACING - Solid state piezoelectric or Lorentzian components are utilized to generate electrical energy in an implanted device. The energy generated from tissue displacement is stored and made available for use as a cardiac pacing charge to be delivered by the device when a triggering condition, such as an arrhythmia is detected. A plurality of implanted devices can be used to collectively provide one or more pacing charges. | 09-24-2009 |
20090269879 | Metalorganic Chemical Vapor Deposition of Zinc Oxide - A method of metalorganic chemical vapor deposition includes converting a condensed matter source to provide a first gas, the source including at least one element selected from the group consisting of gold, silver and potassium. The method further includes providing a second gas comprising zinc and a third gas comprising oxygen, transporting the first gas, the second gas, and the third gas to a substrate, and forming a p-type zinc-oxide based semiconductor layer on the substrate. | 10-29-2009 |
20100032008 | ZINC OXIDE MULTI-JUNCTION PHOTOVOLTAIC CELLS AND OPTOELECTRONIC DEVICES - Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices include p-type, n-type, and undoped materials of Zn | 02-11-2010 |
20100117070 | TEXTURED SEMICONDUCTOR LIGHT-EMITTING DEVICES - A light-emitting device, such as a light-emitting diode (LED), includes a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device further includes at least one textured light emission surface arranged to extract at least some light generated within the device. | 05-13-2010 |
20100133529 | THIN LIGHT-EMITTING DEVICES AND FABRICATION METHODS - A light-emitting device, such as a light-emitting diode (LED), is grown on a substrate including a ZnO-based material. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device is removed from the substrate or the substrate is substantially thinned to improve light emission efficiency of the device. | 06-03-2010 |
20110062440 | Zinc-Oxide Based Epitaxial Layers and Devices - Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided. | 03-17-2011 |
Bunmi T. Adekore, Boston, MA US
Patent application number | Description | Published |
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20130043468 | VERTICAL FIELD EFFECT TRANSISTOR ON OXIDE SEMICONDUCTOR SUBSTRATE - A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials. | 02-21-2013 |
20130181215 | ROTATED CHANNEL SEMICONDUCTOR FIELD EFFECT TRANSISTOR - A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an Al | 07-18-2013 |
Bunmi T. Adekore, Medford, MA US
Patent application number | Description | Published |
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20150021621 | SELF-ALIGNED GATE BURIED CHANNEL FIELD EFFECT TRANSISTOR - This disclosure provides a transistor device formed on a wide band gap substrate. The transistor device includes a channel layer and a gate structure physically coupled to the channel layer. The gate structure can be formed on the channel layer using an epitaxial process instead of a lithographic process, thereby providing a mechanism to build small semiconductor features that are smaller than a resolution of the state-of-the-art lithographic process and reducing the amount of impurities between the channel layer and the gate structure. | 01-22-2015 |