| Patent application number | Description | Published |
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| 20090018288 | CROSSLINKED OLEFIN POLYMERS AND PROCESS FOR PRODUCTION THEREOF - Crosslinked olefin polymers which are reduced in stickiness and improved in rigidity, heat resistance, light resistance, and water resistance while retaining the molding properties such as injection moldability, spinnability, film-forming properties and the physical properties such as toughness (including elongation and break strength) and tackiness; and a process for the production thereof. Crosslinked olefin polymers which are obtained by reacting an α-olefin polymer produced by polymerization of at least one α-olefin having 6 or more carbon atoms or polymerization of at least one α-olefin having 6 or more carbon atoms with at least one other α-olefin with a crosslinking agent and which satisfy the following requirements: (1) the content of units of α-olefins having 6 or more carbon atoms is 50 mol % or more, (2) the molecular weight distribution (Mw/Mn) as determined by gel permeation chromatography (GPC) is 7.0 or more in terms of polystyrene, (3) the content of components having weight-average molecular weights (Mw) of 10 | 01-15-2009 |
| 20100076146 | GRAFT COPOLYMER, THERMOPLASTIC RESIN COMPOSITION COMPRISING THE GRAFT COPOLYMER, AND THOSE PRODUCTION METHOD - Provided is a production process for a graft copolymer or a thermoplastic resin composition containing the above graft copolymer, which comprises graft-polymerizing 100 parts by mass of a combination of 20 to 100% by mass of a reactive polyolefin and 0 to 80% by mass of a polyolefin other than the reactive polyolefin with 0.2 to 300 parts by mass of at least one specific monomer under the presence of a radical initiator and which is useful as a sealant, a modifier for polyolefins, a surface treating agent, a primer treating agent, a coating agent component and the like. | 03-25-2010 |
| 20100324242 | HIGHLY PURE, TERMINAL-UNSATURATED OLEFIN POLYMER AND PROCESS FOR PRODUCTION THEREOF - Provided are a highly-pure, terminal-unsaturated olefin polymer which is produced through homopolymerization or copolymerization of one or more α-olefins having from 3 to 28 carbon atoms, or copolymerization of at least one α-olefin having from 3 to 28 carbon atoms and ethylene, in the presence of a catalyst, and which satisfies the following (1) to (4); and a method of efficiently producing the olefin polymer having a high degree of terminal unsaturation degree and containing little catalyst residue.
| 12-23-2010 |
| 20110015338 | POLYOLEFIN GRAFT COPOLYMER AND ADHESIVE COMPOSITION - A graft copolymer is provided that is useful as an adhesive composition that is excellent in adhesion strength between polyolefins and between a polyolefin and another member (for example, a metal, a resin, and an inorganic material, such as glass), is excellent in flowability at a low temperature and in melting property in a low temperature range, and is excellent in heat resistance after adhesion, i.e., a graft copolymer satisfying the following items (a) to (e): | 01-20-2011 |
| 20110021703 | ENGINEERING PLASTIC RESIN COMPOSITION CONTAINING GRAFT COPOLYMER - Provided is a resin composition containing a resin component prepared by blending a graft copolymer with an engineering plastic, wherein the above graft copolymer is a graft copolymer satisfying (a) to (e) shown below:
| 01-27-2011 |
| 20110104503 | AQUEOUS DISPERSION CONTAINING POLYOLEFIN GRAFT COPOLYMER - According to the present invention, an aqueous dispersion containing a graft copolymer satisfying (a) to (e) shown below and water is provided, and it is an aqueous dispersion containing a graft copolymer which shows an excellent dispersibility even in a state of reducing a surfactant and which is excellent in an affinity with a binder resin, a pigment and the like: | 05-05-2011 |
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| 20100233463 | Method for Forming Porous PTFE Layer, and Porous PTFE Layer and Molded Product That are Obtained by the Forming Method - A method forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 09-16-2010 |
| 20110139343 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |
| 20110139350 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |
| 20110139354 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |
| 20110139355 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |
| 20110139367 | Method for Forming Porous PTFE Layer - A method for forming a porous PTFE layer includes steps of: combining one or at least two unburned porous PTFE films and a support body that can withstand a heating condition in the following process (a rod or plate shaped support body made of mesh or the like is preferable) by using a predetermined means in such a manner that a slip can be prevented in a heating treatment in the following process; and heating the matter resulted from the above process at a temperature of at least 150° C. and less than the melting point of the PTFE film for the range of 5-120 minutes (preferably at a temperature in the range of the melting point of a thermoplastic resin fiber to 320° C. for the range of 10-60 minutes in the case in which the thermoplastic resin fiber or the like is used in the process). | 06-16-2011 |
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| 20080260502 | Substrate processing apparatus and semiconductor device manufacturing method - A substrate processing apparatus comprises a storage container for storing multiple substrates and whose substrate loading and unloading opening is sealed by a lid, a load port for placing the storage container, an attaching and detaching device for attaching and detaching the lid on the substrate loading and unloading opening in the load port, a first placement unit for mounting the storage container in the load port and moving away from and near the attaching and detaching device, and a second placement unit provided separately from the first placement unit, for mounting the storage container in the load port and moving up and down relative to the attaching and detaching device. | 10-23-2008 |
| 20090003977 | Substrate processing apparatus and manufacturing method of a semiconductor device - A substrate processing apparatus is equipped with a processing furnace for processing wafers, a loading port which is used for carrying a pod containing substrates into and out of a case, a pod transport mechanism for transporting the container at least from the entrance and exit place, and a top storage which is disposed above the processing furnace in such a manner that at least part of the top storage overlaps with the processing furnace in the direction of gravity. | 01-01-2009 |
| 20090185892 | Substrate processing apparatus and manufacturing method for semiconductor devices - A substrate processing apparatus comprises a storage container for storing multiple substrates and whose substrate loading and unloading opening is shut by a lid, a loading and unloading port for carrying the storage container into and out of the case, a placement unit for placing the storage container in the loading and unloading port, a storage chamber provided adjacent to the loading and unloading port for storing the storage container, an opening and closing device for opening and closing the substrate loading and unloading opening of the storage container placed in the placement unit, a transfer device containing a holding mechanism for supporting the bottom of the storage container and transferring the storage container supported in the holding mechanism, over the opening and closing device between the inside and outside of the storage chamber, and an elevator mechanism for raising and lowering the placement unit between the placement unit height position where the opening and closing device opens and closes the storage container, and a height position where the transfer device gives and receives the storage container. | 07-23-2009 |
| 20090191718 | Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel - A method of manufacturing a semiconductor device includes the steps of: conveying a plurality of substrates disposed in a direction perpendicular to a substrate processing surface into a processing chamber provided inside of a reaction tube, with an outer periphery surrounded by a heating device; and processing the substrates by introducing gas to a gas inlet tube provided on a side face of the reaction tube in a region for processing the substrates inside the reaction tube, so as to reach at least an outside of the heating device, and spouting the gas into the processing chamber from a slit-shaped gas spouting port disposed in a form so as to straddle at least a plurality of the substrates in a direction perpendicular to the substrate processing surface. | 07-30-2009 |
| 20090269937 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device. The apparatus comprises a substrate processing region, a container carrying region, a housing, first and second openings, an exhaust port, a door body, and a control unit. The substrate processing region comprises a process furnace. The container carrying region comprises a carrying device. In the housing, the substrate processing region and the container carrying region are provided. The first opening is formed at the housing for carrying the container between the container carrying region and an outside region of the housing. The second opening is formed at the housing for sucking gas. The exhaust port is configured to exhaust gas from the container carrying region. The door body closes the first and second openings. The control unit controls the door body to open one of the first and second openings and close the other. | 10-29-2009 |
| 20100229416 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus that can decrease the time necessary for cooling a processed wafer for improving the throughput. The substrate processing apparatus comprises: a process chamber configured to process a substrate; a substrate supporter configured to support the substrate and load the substrate into the process chamber; a transfer mechanism configured to carry the substrate to the substrate supporter; and a non-sealing type shield part installed between the substrate supporter and the transfer mechanism. | 09-16-2010 |
