Patent application number | Description | Published |
20090080107 | METHOD OF CONTROLLING MOVEMENTS OF A POSITION OF A MICROSCANNER - The invention relates to a method of controlling movements of a positioner of a micro-scanner, the method comprising: determining the vibration resonance frequency ranges of the positioner, and performing a main scan by a controlled movement of the positioner. | 03-26-2009 |
20090248773 | METHOD AND APPARATUS FOR SIGNAL TRANSFORMATION FOR POSITIONING SYSTEMS - A method and apparatus for signal transformation for positioning control in positioning systems is provided. The positioning involves performing a signal transformation by determining a transform and an inverse transform between a triangular reference signal and a model reference signal with less frequency content, for transforming the triangular reference signal into a ramp signal; and providing a controller including a double integral module, configured for tracking the model reference signal with zero steady state error, for controlling a positioning system. | 10-01-2009 |
20100077516 | PLATINUM SILICIDE TIP APICES FOR PROBE-BASED TECHNOLOGIES - Tips including a platinum silicide at an apex of a single crystal silicon tip are provided herein. Also, techniques for creating a tip are provided. The techniques include depositing an amount of platinum (Pt) on a single crystal silicon tip, annealing the platinum and single crystal silicon tip to form a platinum silicide, and selectively etching the platinum with respect to the formed platinum silicide. | 03-25-2010 |
20100085041 | MAGNETO-RESISTANCE BASED NANO-SCALE POSITION SENSOR - A position sensor and method include a magnetic component, a first magneto-resistive sensor disposed in proximity to the magnet/coil; and a second magneto-resistive sensor disposed in proximity to the magnetic component and the first magneto-resistive sensor. The first magneto-resistive sensor and second magneto-resistive sensor are configured to sense changes in a stray magnetic field created by the magnetic component in accordance with a relative positional change between the magnetic component and the first and second magneto-resistive sensors. | 04-08-2010 |
20100085056 | MAGNETO-RESISTANCE BASED TOPOGRAPHY SENSING - A topography sensor and method include a probe configured to traverse a surface to determine a topography. A stray magnetic field is disposed in proximity to the probe. A magneto-resistive sensor is configured so that the stray magnetic field passing through it changes in accordance with positional changes of the probe as the probe tip traverses the surface. | 04-08-2010 |
20100116038 | FEEDBACK- ENHANCED THERMO-ELECTRIC TOPOGRAPHY SENSING - A method is provided for determining the topography of an object. A micro-cantilever with a scanning tip is provided. The micro-cantilever includes a thermal sensor. A biased voltage is applied across the thermal sensor. A resistance change of the thermal sensor is then identified. The bias voltage is then modulated, based on the resistance change to enhance the bandwidth and the sensitivity of the thermal sensor. Responsive to the scanning tip traversing a topographical variation on an object, the thermal sensor is vertically displaced with respect to the object, which induces a temperature change of the thermal sensor. A subsequent electrical resistance change of the thermal sensor is then identified, the subsequent electrical resistance change corresponding to a subsequent temperature change. The position of the object relative to the thermal sensor is then identified based on a difference between the initial electrical resistance and the subsequent electrical resistance. The topography of the object can then be determined based on the position of the object relative to the thermal sensor. | 05-13-2010 |
20100175156 | Three-Dimensional Imaging and Manipulation - A three-dimensional imaging and manipulation tool is provided. Techniques for creating a three-dimensional imaging and manipulation tool include combining high-resolution capability of a probe with three-dimensional imaging capability of a heater sensor. Also, techniques for positioning a nano-manipulation device relative to a surface are provided. The techniques include using a heater sensor for non-contact imaging, linking the heater sensor to the nano-manipulation device, and positioning the nano-manipulation relative device to a surface. | 07-08-2010 |
20100201289 | HIGH-SPEED ELECTROSTATIC ACTUATION OF MEMS-BASED DEVICES - A micro-electro mechanical device includes a first structure, a second structure offset from the first structure by a gap. The first structure is configured to be electrostatically actuated to deflect relative to second structure. A pulse generator is configured to combine at least two different pulses to electrostatically drive at least one of the first structure and the second structure between an initial position and a final position. | 08-12-2010 |
20110242884 | Programming at Least One Multi-Level Phase Change Memory Cell - A method of applying at least one programming pulse to the a PCM cell for programming the PCM cell to have a respective definite cell state, the definite cell state being defined by a definite resistance level using an annealing pulse or a melting pulse. The respective definite cell state represents two information entities, a step of applying a first reading pulse to the respective programmed PCM cell to provide a first resistance value, a step of applying at least a second reading pulse to the respective programmed PCM cell to provide a second resistance value, the first reading pulse and the second reading pulse being different pulses; and a step of determining the respective definite cell state of the respective programmed PCM cell dependent on the respective provided first resistance value and the respective provided second resistance value. | 10-06-2011 |
20110321202 | DYNAMIC MODE NANO-SCALE IMAGING AND POSITION CONTROL USING DEFLECTION SIGNAL DIRECT SAMPLING OF HIGHER MODE-ACTUATED MICROCANTILEVERS - An apparatus is provided and includes a cantilever having a tip at a distal end thereof disposed with the tip positioned an initial distance from a sample and a circuit electrically coupled to a substrate on which the sample is layered and the cantilever to simultaneously apply direct and alternating currents to deflect the cantilever and to cause the tip to oscillate about a point at a second distance from the sample, which is shorter than the initial distance, between first positions, at which the tip contacts the sample, and second positions, at which the tip is displaced from the sample. | 12-29-2011 |
20140090964 | Nanoelectromechanical Switch With Localized Nanoscale Conductive Pathway - The present invention is directed to a nanoelectromechanical (NEM) switch comprising two electrodes ( | 04-03-2014 |
20140211540 | METHOD AND APPARATUS FOR READ MEASUREMENT OF A PLURALITY OF RESISTIVE MEMORY CELLS - A method for read measurement of a plurality N of resistive memory cells having a plurality K of programmable levels. The method includes a step of applying a first read voltage to each of the plurality N of resistive memory cells and, at each of the plurality N of resistive memory cells, measuring a first read current due to the applied first read voltage, determining a respective second read voltage based on the first read current measured at the plurality N of resistive memory cells and a target read current determined for the plurality N of resistive memory cells for each of the plurality N of resistive memory cells, and applying the respective determined second read voltage to the plurality N of resistive memory cells for obtaining a second read current for each of the plurality N of resistive memory cells. | 07-31-2014 |
20140211541 | READ MEASUREMENT OF A PLURALITY OF RESISTIVE MEMORY CELLS - A method for read measurement of a plurality N of resistive memory cells having a plurality M of programmable levels is suggested. The method includes a step of reading back from a number of reference cells to obtain a reading back parameter, a step of determining an actual read voltage for the N memory cells based on the obtained reading back parameter for obtaining a target read current at a following read measurement, and, a step of applying the determined actual read voltage to the N memory cells at the following read measurement. | 07-31-2014 |
20140369113 | PHASE-CHANGE MEMORY CELLS - A phase-change memory cell for storing information in a plurality of programmable cell states. The memory cell includes: a phase-change material located between a first electrode and a second electrode for applying a read voltage to the phase-change material to read a programmed cell state; and an electrically-conductive component extending in a direction between the first and second electrodes in contact with the phase-change material and arranged to present, to a cell current produced by the read voltage, a lower-resistance current path than an amorphous phase of the phase-change material in any of the plurality of programmable cell states, said current path having a length dependent on a size of said amorphous phase, wherein a volume of the electrically-conductive component is greater than about half that of said phase-change material. | 12-18-2014 |
20150036413 | RESISTIVE MEMORY ELEMENT BASED ON OXYGEN-DOPED AMORPHOUS CARBON - The present invention is notably directed to a resistive memory element comprising a resistively switchable material coupled to two conductive electrodes, wherein the resistively switchable material is an amorphous compound comprising carbon and oxygen. Moreover, the carbon and oxygen stoichiometric ratio can be within a range of 1:0.30 to 1:0.80. | 02-05-2015 |