Patent application number | Description | Published |
20100148369 | Wire bonding method and semiconductor device - Wire bonding method for reducing height of a wire loop in a semiconductor device, including a first bonding step of bonding an initial ball formed at a tip end of a wire onto a first bonding point using a capillary, thereby forming a pressure-bonded ball; a wire pushing step of pushing the wire obliquely downward toward the second bonding point at a plurality of positions by repeating a sequential movement for a plurality of times, the sequential movement including moving of the capillary substantially vertically upward and then obliquely downward toward the second bonding point by a distance shorter than a rising distance that the capillary has moved upward; and a second bonding step of moving the capillary upward and then toward the second bonding point, and bonding the wire onto the second bonding point by pressure-bonding. | 06-17-2010 |
20100155455 | Wire bonding method - A wire bonding method for bonding a ball which is formed at a tip end of a bonding wire to a pad that is a first bonding point to form a first bonding part and bonding the wire to an interconnect wiring that is a second bonding point to form a second bonding part, thus connecting the pad and the interconnect wiring with the wire, wherein after the ball is bonded to the first bonding point and a capillary is ascended, examination is performed to find any bonding failure of the first bonding part; and when the bonding failure at the first bonding point is found, then the capillary is caused to descend to execute rebonding to bond the first bonding part to the first bonding point with applying greater energy comprising a longer period of bonding time than last first bonding while pressing the capillary to the first bonding point. | 06-24-2010 |
20100207280 | Wire bonding method and semiconductor device - After forming a pressure-bonded ball and a ball neck by bonding an initial ball to a pad, a capillary is moved upward, away from a lead, and then downward, thereby the ball neck is trodden on by a face portion that is on the lead side of the capillary. Subsequently, the capillary is moved upward and then toward the lead until the face portion of the capillary is positioned above the ball neck, thereby a wire is folded back toward the lead. Then, the capillary is moved downward such that a side of the wire is pressed by the capillary against the ball neck that has been trodden on. After the capillary is moved obliquely upward toward the lead and then looped toward the lead, the wire is pressure-bonded to the lead. | 08-19-2010 |
20110079904 | Semiconductor device - Wire bonding method for reducing height of a wire loop in a semiconductor device, including a first bonding step of bonding an initial ball formed at a tip end of a wire onto a first bonding point using a capillary, thereby forming a pressure-bonded ball; a wire pushing step of pushing the wire obliquely downward toward the second bonding point at a plurality of positions by repeating a sequential movement for a plurality of times, the sequential movement including moving of the capillary substantially vertically upward and then obliquely downward toward the second bonding point by a distance shorter than a rising distance that the capillary has moved upward; and a second bonding step of moving the capillary upward and then toward the second bonding point, and bonding the wire onto the second bonding point by pressure-bonding. | 04-07-2011 |
20120139129 | WIRE BONDING METHOD AND SEMICONDUCTOR DEVICE - After forming a pressure-bonded ball and a ball neck by bonding an initial ball to a pad, a capillary is moved upward, away from a lead, and then downward, thereby the ball neck is trodden on by a face portion that is on the lead side of the capillary. Subsequently, the capillary is moved upward and then toward the lead until the face portion of the capillary is positioned above the ball neck, thereby a wire is folded back toward the lead. Then, the capillary is moved downward such that a side of the wire is pressed by the capillary against the ball neck that has been trodden on. After the capillary is moved obliquely upward toward the lead and then looped toward the lead, the wire is pressure-bonded to the lead. | 06-07-2012 |
Patent application number | Description | Published |
20080197510 | Semiconductor device and wire bonding method - A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion. | 08-21-2008 |
20090001608 | Semiconductor device and wire bonding method - After bonding a wire to a pad on a surface of a semiconductor chip, a capillary is moved toward a lead and toward a direction opposite to the lead as the wire is fed out, and a first kink that is convex in a direction opposite to the lead, a second kink that is convex toward the lead, and a straight portion that continues from the second kink are formed in the wire. Then, the capillary is moved to form a loop and bonds the wire to the lead. During this bonding, the straight portion is formed into a linear portion in a direction along the surface of the lead, and the linear portion is pressed to the surface of the lead. | 01-01-2009 |
20090194577 | Wire bonding method - A wire bonding method with the process of performing a first bonding to a pad of a die that is a first bond point, and the process of performing a second bonding to an interconnect wiring (or a lead) that is a second bond point, thus connecting the pad and the interconnect wiring with a wire. A bump is first formed on a pad, and, in a wire cutting step performed during the step of forming the bump, the wire protruding from the tip end of a capillary is bent in the lateral direction to form a bent part, and then the bent part is bonded to the bump, thus completing the first bonding process; after which the wire is bonded to the interconnect wiring, thus completing the second bonding process. | 08-06-2009 |
20090308914 | WIRE BONDING METHOD - A wire bonding method that connects a first bonding point and a second bonding point by a wire, the method including a step that press-bonds a ball formed on a tip end of a wire to a first bonding point, thus forming a press-bonded ball; a step that slightly raises a capillary, moves the capillary toward a second bonding point and then lowers the capillary by an amount that is smaller than an amount in which the capillary was raised, and a step that raises the capillary to allow the wire to be paid out of the capillary and moves the capillary toward a second bonding point, thus connecting the wire to the second bonding point. | 12-17-2009 |
20100248470 | Method of manufacturing semiconductor device - A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion. | 09-30-2010 |