Patent application number | Description | Published |
20100144121 | Germanium FinFETs Having Dielectric Punch-Through Stoppers - A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fine. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin. | 06-10-2010 |
20100163971 | Dielectric Punch-Through Stoppers for Forming FinFETs Having Dual Fin Heights - A semiconductor structure includes a semiconductor substrate having a first portion and a second portion. A first Fin field-effect transistor (FinFET) is formed over the first portion of the semiconductor substrate, wherein the first FinFET includes a first fin having a first fin height. A second FinFET is formed over the second portion of the semiconductor substrate, wherein the second FinFET includes a second fin having a second fin height different from the first fin height. A top surface of the first fin is substantially level with a top surface of the second fin. A punch-through stopper is underlying and adjoining the first FinFET, wherein the punch-through stopper isolates the first fin from the first portion of the semiconductor substrate. | 07-01-2010 |
20100317184 | METHOD FOR REDUCING INTERFACIAL LAYER THICKNESS FOR HIGH-K AND METAL GATE STACK - A method for reducing interfacial layer (IL) thickness for high-k dielectrics and metal gate stack is provided. In one embodiment, the method includes forming an interfacial layer on a semiconductor substrate, etching back the interfacial layer, depositing a high-k dielectric material over the interfacial layer, and forming a metal gate over the high-k dielectric material. The IL can be chemical oxide, ozonated oxide, thermal oxide, or formed by ultraviolet ozone (UVO) oxidation process from chemical oxide, etc. The etching back of IL can be performed by a Diluted HF (DHF) process, a vapor HF process, or any other suitable process. The method can further include performing UV curing or low thermal budget annealing on the interfacial layer before depositing the high-k dielectric material. | 12-16-2010 |
20120025313 | Germanium FinFETs Having Dielectric Punch-Through Stoppers - A method of forming a semiconductor structure includes providing a composite substrate, which includes a bulk silicon substrate and a silicon germanium (SiGe) layer over and adjoining the bulk silicon substrate. A first condensation is performed to the SiGe layer to form a condensed SiGe layer, so that the condensed SiGe layer has a substantially uniform germanium concentration. The condensed SiGe layer and a top portion of the bulk silicon substrate are etched to form a composite fin including a silicon fin and a condensed SiGe fin over the silicon fin. The method further includes oxidizing a portion of the silicon fin; and performing a second condensation to the condensed SiGe fin. | 02-02-2012 |
20120299110 | Dielectric Punch-Through Stoppers for Forming FinFETs Having Dual Fin Heights - A semiconductor structure includes a semiconductor substrate having a first portion and a second portion. A first Fin field-effect transistor (FinFET) is formed over the first portion of the semiconductor substrate, wherein the first FinFET includes a first fin having a first fin height. A second FinFET is formed over the second portion of the semiconductor substrate, wherein the second FinFET includes a second fin having a second fin height different from the first fin height. A top surface of the first fin is substantially level with a top surface of the second fin. A punch-through stopper is underlying and adjoining the first FinFET, wherein the punch-through stopper isolates the first fin from the first portion of the semiconductor substrate. | 11-29-2012 |
20120322253 | METHOD FOR REDUCING INTERFACIAL LAYER THICKNESS FOR HIGH-K AND METAL GATE STACK - This description relates to a method including forming an interfacial layer over a semiconductor substrate. The method further includes etching back the interfacial layer. The method further includes performing an ultraviolet (UV) curing process on the interfacial layer. The UV curing process includes supplying a gas flow rate ranging from 10 standard cubic centimeters per minute (sccm) to 5 standard liters per minute (slm), wherein the gas comprises inert gas, and heating the interfacial layer at a temperature less than or equal to 700° C. The method further includes depositing a high-k dielectric material over the interfacial layer. | 12-20-2012 |
20130256812 | METHOD FOR REDUCING INTERFACIAL LAYER THICKNESS FOR HIGH-K AND METAL GATE STACK - A method of performing an ultraviolet (UV) curing process on an interfacial layer over a semiconductor substrate, the method includes supplying a gas flow rate ranging from 10 standard cubic centimeters per minute (sccm) to 5 standard liters per minute (slm), wherein the gas comprises inert gas. The method further includes heating the interfacial layer at a temperature less than or equal to 700° C. Another method of performing an annealing process on an interfacial layer over a semiconductor substrate, the second method includes supplying a gas flow rate ranging from 10 sccm to 5 slm, wherein the gas comprises inert gas. The method further includes heating the interfacial layer at a temperature less than or equal to 600° C. | 10-03-2013 |
Patent application number | Description | Published |
20090037799 | OPERATING METHOD APPLIED TO LOW DENSITY PARITY CHECK (LDPC) DECODER AND CIRCUIT THEREOF - An operating method applied to low density parity check (LDPC) decoders and the circuit thereof are proposed, in which original bit nodes are incorporated into check nodes for simultaneous operation. The bit node messages are generated according to the different between the newly generated check messages and the previously check node messages. The bit node messages can be updated immediately, and the decoder throughput can be improved. In the other way, the required memory of LDPC decoders can be effectively reduced, and the decoding speed can also be enhanced. | 02-05-2009 |
20090146849 | MULTI-MODE MULTI-PARALLELISM DATA EXCHANGE METHOD AND DEVICE THEREOF - A multi-mode multi-parallelism data exchange method and the device thereof are proposed to apply to a check node operator or a bit node operator. The proposed method comprises the steps of: duplicating part or all of an original shift data as a duplicated shift data; combining the original shift data and the duplicated shift data to form a data block; and using a data block as the unit to shift this data block so as to conveniently retrieve shift data from the shifted data block. With a maximum z factor circuit and duplication of part of data, specifications of different shift sizes can be supported. The functions of shifters of several sizes can therefore be accomplished with the minimum complexity. | 06-11-2009 |
20100017452 | MEMORY-BASED FFT/IFFT PROCESSOR AND DESIGN METHOD FOR GENERAL SIZED MEMORY-BASED FFT PROCESSOR - For a large size FFT computation, this invention decomposes it into several smaller sizes FFT by decomposition equation and then transform the original index from one dimension into multi-dimension vector. By controlling the index vector, this invention could distribute the input data into different memory banks such that both the in-place policy for computation and the multi-bank memory for high-radix structure could be supported simultaneously without memory conflict. Besides, in order to keep memory conflict-free when the in-place policy is also adopted for I/O data, this invention reverses the decompose order of FFT to satisfy the vector reverse behavior. This invention can minimize the area and reduce the necessary clock rate effectively for general sized memory-based FFT processor design. | 01-21-2010 |
20100169402 | FAST FOURIER TRANSFORM PROCESSOR - An FFT processor is disclosed, which includes a first multi-pipelined MDC unit, a second multi-pipelined MDC unit and a switching network. The first multi-pipelined MDC unit and the second multi-pipelined MDC unit respectively employ a plurality of MDC circuits to change the positions of the delayers thereof in parallel way. By changing the operation time sequence of the signals in the first multi-pipelined MDC unit and the second multi-pipelined MDC unit, the first multi-pipelined MDC unit is able to directly send the operation results to the second multi-pipelined MDC unit through the switching network. | 07-01-2010 |
20110302045 | AUTOMATIC PATENT TRANSACTION SYSTEM - The invention discloses an automatic patent transaction system. The invention comprises a patent database, a member database, a match computing device, a share computing device, a non-member database, and a licensing and transacting computing device. The operation method of the invention also comprises a method for the participation of member and non-member, and a method for the participation of member only. Thus, the invention is able to increase the trade efficiency of the patent and reduce the trade cost of the patent. | 12-08-2011 |
20120159187 | ELECTRONIC DEVICE AND METHOD FOR PROTECTING AGAINST DIFFERENTIAL POWER ANALYSIS ATTACK - An electronic device and a method for protecting against a differential power analysis attack are disclosed herein. The electronic device includes an encryption/decryption unit, a random number generator and a countermeasure circuit. The encryption/decryption unit can provide an enable signal when encrypting or decrypting more bits of data. The random number generator can generate random data. When receiving the enable signal, the countermeasure circuit can operate according to the bits of data and the random data. | 06-21-2012 |
20130038369 | Delay Cell and Digitally Controlled Oscillator - A delay cell includes a first inverted transistor pair, a second inverted transistor pair and a plurality of delay units. The first inverted transistor pair is used to receive an input signal. The second inverted transistor pair is electrically cross-coupled to the first inverted transistor pair and cross-controlled by the first inverted transistor pair. The delay units are cascaded between the first inverted transistor pair and between the second inverted transistor pair, thereby providing a plurality of signal propagation delays sequentially, wherein the input signal is delayed for a pre-determined time by the first inverted transistor pair, the second inverted transistor pair and the delay units which are operated sequentially, thereby creating an output signal corresponding to the pre-determined time. A digitally controlled oscillator including the aforementioned delay cells is provided. | 02-14-2013 |
20130111304 | CYCLIC CODE DECODING METHOD AND CYCLIC CODE DECODER | 05-02-2013 |
20130249615 | DIGITAL SENSING APPARATUS AND DIGITAL READOUT MODULE THEREOF - A digital sensing apparatus includes a sensing unit capable of providing a sensing response associated with an environmental parameter, and a digital readout module including a reading unit for generating a pulse signal having a pulse width as sociated with the sensing response, and a converting unit. The converting unit includes a clock signal generator for generating a variable-frequency clock signal, and a counter operable to count a width value of the pulse width of the pulse signal using the clock signal, so as to generate a digital sensing code. The frequency of the clock signal from the clock signal generator is adjustable to adjust resolution of the width value of the pulse width of the pulse signal. | 09-26-2013 |
20140152363 | PULSE-BASED FLIP FLOP - A pulse-based flip-flop that latches a data input signal to convert the data input signal into a data output signal in response to a first clock signal and the second clock signal. The pulse-based flip-flop includes a pulse generator and a data latch. The pulse generator includes a first inverter and a signal delay circuit to receive the first clock signal and generate the second clock signal; the data latch includes a delivery circuit, a latch circuit and a control circuit. The data latch is used to latch the data input signal and output the data output signal in response to the first and the second clock signals. | 06-05-2014 |
20140162561 | BODY CHANNEL COMMUNICATION METHOD AND DEVICE - A body channel communication method is disclosed including the following steps. Whether or not a body channel is established is detected. When that a body channel is established is detected, a check packet is received from an electrical device, which is at another end of the body channel, through the body channel. A current interference power of the body channel is estimated according to the received check packet. A current transmission mode for the body channel is obtained according to the current interference power. Data is transmitted through the body channel, which is set to the current transmission mode. Further, a body channel communication device is also disclosed. | 06-12-2014 |
Patent application number | Description | Published |
20090160686 | APPARATUS OF MULTI-STAGE NETWORK FOR ITERATIVE DECODING AND METHOD THEREOF - An apparatus and method of multi-stage network for iterative network are disclosed. The apparatus has M stages, and each stage uses N multiplexers to transmit N codeword partitions simultaneously. Every starting terminal, either the output port of memories, soft-in soft-out decoders, or multiplexers, has two paths to couple with two different multiplexers at next stage. One path connects the source to the first data port of one multiplexer; the other connects the source to the second data port of another multiplexer. The two multiplexers will be controlled with the same 1-bit signal, so each source has only one valid path to next stage. The invention can guarantee that the transmission of N data blocks is free from contention. | 06-25-2009 |
20090278617 | Crystal-less Communications Device and Self-Calibrated Embedded Virtual Crystal Clock Generation Method - This invention discloses a crystal-less communication device and self-calibrated embedded virtual crystal clock generation method. In communication systems, the invention proposes a crystal-less scheme in the device for wireless or wired-line communications. The operation concepts are that the transmitter Device- | 11-12-2009 |
20100013533 | DIGITAL DELAY LINE AND APPLICATION THEREOF - A digital delay line includes a plurality of hysteresis-based delay cells electrically connected in series. These hystersis delay units in the hysteresis-based delay cells may be similar or different. All of the hysteresis delay units respectively have an inverter mode and a hesteresis mode. The delay and resolution of the hysteresis delay unit may be derived from the time difference in the inverter mode and hysteresis mode. Such a digital delay line applied to a digital phase locked loop may reduce consumption of area and power. | 01-21-2010 |
20100013536 | Absolute time delay generating device - An absolute time delay generating device includes a PVT (process-voltage-temperature) detection device and a delay-timing generator. The PVT detection device includes at least a delay module and a signal phase/frequency control module. The delay module includes a control unit and a reference unit. The control unit differs from the reference unit in sensitivity of delay property to PVT. The delay module compares phase or frequency differences generated when origin signals pass through the control unit and reference unit respectively, and produce delay parameters of the delay module. The signal phase/frequency control module receives and compares the delay parameters to determine an ambient PVT condition for the absolute time delay generating device, so as to control and correct the delay-timing generator and thereby generate accurate absolute time delay. Under various PVT influences, the absolute time delay generating device is capable of generating accurate, absolute time signals. | 01-21-2010 |
20100090769 | Digital Loop Filter for All-Digital Phase-Locked Loop Design - A digital loop filter installed in an all-digital phase-locked loop (PLL) receives a digitally controlled oscillator (DCO) control code transmitted from a PLL controller in the all-digital PLL, and calculate an average value, such that the PLL controller can produce another DCO control code by the average value for controlling and adjusting an output signal of a digitally controlled oscillator (DCO) in the neighborhood of the average value to maintain compensating a phase/frequency difference with an input signal, so as to minimize the jitter effect of the input signal on the all-digital PLL, reduce the jitter effect of the output signal, and keep tracking and locking the frequency and the phase of the input signal. | 04-15-2010 |
20110273239 | Dual positive-feedbacks voltage controlled oscillator - A dual positive-feedbacks voltage controlled oscillator includes an oscillation circuit and a cross coupled pair circuit. The oscillation circuit includes a first transistor, a second transistor, an inductor and a plurality of capacitors. The gates of the first and second transistors are opposite to each other and coupled to two points of the inductor. The inductor and the capacitors are formed as a LC tank. The cross coupled pair circuit includes a third transistor and a fourth transistor. The gates of the third and fourth transistors are cross coupled to two points of the inductor. Thereby, the gate of the third transistor is coupled to the gate of the second transistor; the gate of the fourth transistor is coupled to the gate of the first transistor; the drain of the third transistor is coupled to the source of the first transistor; and the drain of the fourth transistor is coupled to the source of the second transistor. | 11-10-2011 |
20110296281 | APPARATUS AND METHOD OF PROCESSING CYCLIC CODES - An apparatus and a method of processing cyclic codes are disclosed herein, where the apparatus includes at least one reconfigurable module and an encoder controller. The reconfigurable module includes a plurality of linear feedback shift registers. The encoder controller can control the reconfigurable module to factor a generator polynomial into a factorial polynomial. In the reconfigurable module, the linear feedback shift registers can register a plurality of factors of the factorial polynomial respectively. | 12-01-2011 |