Patent application number | Description | Published |
20080242071 | METHOD FOR PASSIVATING GATE DIELECTRIC FILMS - The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate, forming a dielectric layer over the semiconductor substrate, treating the dielectric layer with a carbon containing group, forming a conductive layer over the treated dielectric layer, and patterning and etching the dielectric layer and conductive layer to form a gate structure. The carbon containing group includes an OCH | 10-02-2008 |
20080290421 | Contact barrier structure and manufacturing methods - A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a source/drain region adjacent the gate dielectric; a silicide region on the source/drain region; a metal layer on top of, and physical contacting, the silicide region; an inter-layer dielectric (ILD) over the metal layer; and a contact opening in the ILD. The metal layer is exposed through the contact opening. The metal layer further extends under the ILD. The semiconductor structure further includes a contact in the contact opening. | 11-27-2008 |
20110062526 | METAL GATE TRANSISTOR, INTEGRATED CIRCUITS, SYSTEMS, AND FABRICATION METHODS THEREOF - A gate-last method for forming a metal gate transistor is provided. The method includes forming an opening within a dielectric material over a substrate. A gate dielectric structure is formed within the opening and over the substrate. A work function metallic layer is formed within the opening and over the gate dielectric structure. A silicide structure is formed over the work function metallic layer. | 03-17-2011 |
20110117724 | ISOLATION STRUCTURE FOR STRAINED CHANNEL TRANSISTORS - A method and system is disclosed for forming an improved isolation structure for strained channel transistors. In one example, an isolation structure is formed comprising a trench filled with a nitrogen-containing liner and a gap filler. The nitrogen-containing liner enables the isolation structure to reduce compressive strain contribution to the channel region. | 05-19-2011 |
20110263072 | FORMING CHALCOGENIDE SEMICONDUCTOR ABSORBERS - Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient. | 10-27-2011 |
20130037093 | SUPERSTRATE SOLAR CELL - A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer. | 02-14-2013 |
20130269778 | CIGS SOLAR CELL STRUCTURE AND METHOD FOR FABRICATING THE SAME - A method for manufacturing a CIGS thin film photovoltaic device includes forming a back contact layer on a substrate, forming an Se-rich layer on the back contact layer, forming a precursor layer on the Se-rich layer by depositing copper, gallium and indium resulting in a first interim structure, annealing or selenizing the first interim structure, thereby forming Cu/Se, Ga/Se or CIGS compounds along the interface between the back contact layer and the precursor layer and resulting in a second interim structure, and selenizing the second interim structure, thereby converting the precursor layer into a CIGS absorber layer on the back contact layer. | 10-17-2013 |
20130327393 | SUPERSTRATE SOLAR CELL - A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer. | 12-12-2013 |
20150050772 | METHOD OF FORMING CHALCOPYRITE THIN FILM SOLAR CELL - In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate. | 02-19-2015 |
Patent application number | Description | Published |
20100167101 | PROTON EXCHANGE MEMBRANE COMPOSITION - Proton exchange membrane compositions having high proton conductivity are provided. The proton exchange membrane composition includes a hyper-branched polymer, wherein the hyper-branched polymer has a DB (degree of branching) of more than 0.5. A polymer with high ion conductivity is distributed uniformly over the hyper-branched polymer, wherein the hyper-branched polymer has a weight ratio equal to or more than 5 wt %, based on the solid content of the proton exchange membrane composition. | 07-01-2010 |
20110216030 | SIGNAL SENSING STRUCTURE FOR TOUCH PANELS - A signal sensing structure for touch panels comprises a circuit substrate, a capacitive signal sensing unit located on the circuit substrate and an electromagnetic signal sensing unit. The capacitive signal sensing unit includes a first sensing array and a second sensing array, which are interlaced and respectively have a plurality of cascaded electrodes. The electrodes form a plurality of sensing blocks, and first gaps and second gaps are formed between the sensing blocks and vertical to each other. The electromagnetic signal sensing unit includes a first sensing line set and a second sensing line set, which are respectively arranged on the first gaps and the second gaps and vertical to each other. The circuit substrate has a capacitive signal and an electromagnetic signal sensing structures without mutual interference of different signals. Therefore, the present invention can accurately sense the variation of capacitive and electromagnetic signals. | 09-08-2011 |
20140286605 | SELF-ALIGNED CHIP CARRIER AND PACKAGE STRUCTURE THEREOF - The disclosure relates to a chip carrier, suitable for being inserted into a corresponding substrate. The light emitting/receiving chip mounted on the chip carrier is disposed within the corresponding substrate and aligned to the waveguide embedded in the corresponding substrate with an appropriate distance. | 09-25-2014 |
Patent application number | Description | Published |
20080264675 | PRINTED CIRCUIT BOARD AND METHOD FOR MANUFACTURING THE SAME - An exemplary method for manufacturing a printed circuit board is provided. In the method, firstly, a circuit substrate having a substrate and a number of soldering pads is provided. Secondly, a protective layer is formed onto the circuit substrate in a manner such that the soldering pads are entirely covered by the protective layer. Fourthly, a laser beam is applied onto portions of the protective layer spatially corresponding to the soldering pads in a manner such that the portions of the protective layer is removed, thereby exposing the soldering pads to an exterior. A printed circuit board having a protective layer with high precision of resolution is also provided. | 10-30-2008 |
20090050354 | PRINTED CIRCUIT BOARD SUBSTRATE AND PRINTED CIRCUIT BOARD HAVING THE SAME - A printed circuit board substrate includes an insulation matrix and a waterproof layer. The insulation matrix includes a first surface and a second surface at an opposite side thereof to the first surface. The waterproof layer is formed in the insulation matrix and is arranged between the first surface and the second surface for blocking water from passing therethrough in a thicknesswise direction of the insulation matrix. | 02-26-2009 |
20090050602 | METHOD FOR FORMING HOLES IN MAKING PRINTED CIRCUIT BOARD - A method for forming holes in making a printed circuit board includes the step of: providing a copper clad laminate including an insulation layer and a copper layer laminated on the insulation layer; forming a carbon nano-material on the copper layer of the copper clad laminate; and applying a laser beam onto a portion of the carbon nano-material to define a hole in the copper clad laminate beneath the portion of the carbon nano-material. | 02-26-2009 |
20090107706 | MULTILAYER PRINTED CIRCUIT BOARD - A multilayer printed circuit board includes a first printed circuit board, a second printed circuit board, an adhesive film, and a function layer. The adhesive film is sandwiched between the first printed circuit board and the second printed circuit board. The function layer is disposed between the first printed circuit board and the second printed circuit board for blocking water from passing therethrough and for screening electromagnetic interference between the first printed circuit board and the second printed circuit board. | 04-30-2009 |
20090241333 | METHOD FOR MANUFACTURING PRINTED CIRCUIT BOARD HAVING DIFFERENT THICKNESSES IN DIFFERENT AREAS - A method for manufacturing a printed circuit board (PCB) having different thicknesses in different areas includes: providing a first substrate having two lateral unwanted portions bounded two imaginary boundary lines, a binder layer having a through opening and a second substrate having a mounting area for mounting electronic elements; forming two slots bounded the imaginary boundary lines in an intermediated unwanted portion of the first substrate corresponding to the mounting area; laminating the first and second substrates, and the binder layer with the mounting area exposed via the through opening; filling the two slots and the through opening with a filling material, thereby obtaining a semifinished PCB board; cutting the semifinished PCB board along the imaginary boundary lines to remove the two lateral unwanted portions and a portion of the second substrate corresponding to the two lateral unwanted portions; and removing the intermediate unwanted portion and the filling material. | 10-01-2009 |
20090277680 | INSULATING FILM, PRINTED CIRCUIT BOARD SUBSTRATE AND PRINTED CIRCUIT BOARD INCLUDING SAME - An insulating film includes a first polymer layer, a second polymer layer and an electromagnetic shielding layer sandwiched between the first polymer layer and the second polymer layer. The electromagnetic shielding layer includes a number of carbon nanotube films that are substantially parallel to the first and second polymer layer. Each of the carbon nanotube films includes a number of carbon nanotubes that are substantially parallel to each other. The insulating film can provide anti-EMI effect in printed circuit boards without employing additional electromagnetic shielding layers. | 11-12-2009 |
20090314739 | WET PROCESSING SYSTEM AND WET PROCESSING METHOD - An exemplary system for processing a workpiece comprises a conveyor, a first liquid spraying device, a second liquid spraying device, and a substrate positioning device. The conveyor is configured for conveying the workpiece along a conveying direction. The first and second liquid spraying devices for spraying liquid onto the workpiece transported on the conveyor face the conveyor and are arranged along the conveying direction. The substrate positioning device for reorienting the workpiece on the conveyor is installed between the first and second liquid spraying devices and faces the conveyor. | 12-24-2009 |
Patent application number | Description | Published |
20130075247 | METHOD AND SYSTEM FOR FORMING CHALCOGENIDE SEMICONDUCTOR MATERIALS USING SPUTTERING AND EVAPORATION FUNCTIONS - A method and system for forming a chalcogenide or chalcopyrite-based semiconductor material provide for the simultaneous deposition of metal precursor materials from a target and Se radials from a Se radical generation system. The Se radical generation system includes an evaporator that produces an Se vapor and a plasma chamber that uses a plasma to generate a flux of Se radicals. Multiple such deposition operations may take place in sequence, each having the deposition temperature accurately controlled. The deposited material may include a compositional concentration gradient or may be a composite material, and may be used as an absorber layer in a solar cell. | 03-28-2013 |
20130118569 | METHOD FOR FORMING THIN FILM SOLAR CELL WITH BUFFER-FREE FABRICATION PROCESS - A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode layer, a light absorbing semiconductor layer, and top electrode layer. The absorber layer includes a p-type interior region and an n-type exterior region formed around the perimeter of the layer from a modified native portion of the p-type interior region, thereby forming an active n-p junction that is an intrinsic part of the absorber layer. The top electrode layer is electrically connected to the bottom electrode layer via a scribe line formed in the absorber layer that defines sidewalls. The n-type exterior region of the absorber layer extends along both the horizontal top of the absorber layer, and onto the vertical sidewalls of the scribe line to increase the area of available n-p junction in the solar cell thereby improving solar conversion efficiency. | 05-16-2013 |
20130133732 | METHOD FOR FORMING INTERCONNECT IN SOLAR CELL - A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode, semiconductor light absorbing layer, and top electrode. Interconnects may be formed between the top and bottom electrodes by electrochemical plating of conductive materials in recessed regions formed between the electrodes. In some embodiments, the conductive materials may be optically opaque metals having non-light transmissive properties. The interconnects are highly conductive and minimize the thickness of the top electrode layer, thereby enhancing light transmission and cell energy conversion performance. | 05-30-2013 |
20130153015 | METHOD FOR FORMING SOLAR CELLS - A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode layer, semiconductor light absorbing layer, top electrode layer, and a protective moisture barrier layer. In some embodiments, the barrier layer is formed of a water-insoluble material. The barrier layer helps protect the top electrode layer from exposure and damage caused by water and oxygen. | 06-20-2013 |
20130167916 | THIN FILM PHOTOVOLTAIC CELLS AND METHODS OF FORMING THE SAME - A thin film photovoltaic cell and method for forming the same. The thin film photovoltaic cell includes a first electrode layer formed on a substrate. An absorber layer of a first dopant-type is formed on the first electrode layer. The absorber layer has an opening extending partially into the absorber layer from a top surface of the absorber layer. The opening has side walls and a bottom surface. A buffer layer of a second dopant type is formed on the top surface of the absorber layer, the side walls of the opening and the bottom surface of the opening A second electrode layer is formed on the buffer layer. | 07-04-2013 |
20140109958 | METHOD OF IN-SITU FABRICATING INTRINSIC ZINC OXIDE LAYER AND THE PHOTOVOLTAIC DEVICE THEREOF - A method of fabricating a photovoltaic device includes forming an absorber layer for photon absorption over a substrate, forming a buffer layer above the absorber layer, wherein both the absorber layer and the buffer layer are semiconductors, and forming a layer of intrinsic zinc oxide above the buffer layer through a hydrothermal reaction in a solution of a zinc-containing salt and an alkaline chemical. | 04-24-2014 |
20140130856 | MOLYBDENUM SELENIDE SUBLAYERS WITH CONTROLLED THICKNESS IN SOLAR CELLS AND METHODS FOR FORMING THE SAME - A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer. | 05-15-2014 |
20140206132 | METHOD FOR INDIUM SPUTTERING AND FOR FORMING CHALCOPYRITE-BASED SOLAR CELL ABSORBER LAYERS - A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a | 07-24-2014 |
20140261691 | THIN FILM SOLAR CELL AND FABRICATION METHOD THEREFOR - A method is disclosed for manufacturing an absorber layer, such as a CIS-based absorber layer, in a thin film solar cell, such as a CIS-based thin film solar cell. One method includes a selenization step, an annealing step, and a sulfuration step. Another method includes an annealing step and a sulfuration step. Additionally, a disclosed CIS-based absorber layer has a surface-to-bottom ratio of gallium which is greater than that for a conventional absorber layer and the ratio of sulfur to sulfur-plus-selenium is less than that for a conventional absorber layer. Also provided is a process for producing an absorber layer, such as a CIS-based absorber layer, over a large area where the layer is capable of achieving both a high open circuit voltage and a high fill factor by preferable depth composition profile through controllable gallium-diffusion/sulfur-incorporation and the enlarged grain size. | 09-18-2014 |
20140360864 | APPARATUS AND METHODS FOR FORMING CHALCOPYRITE LAYERS ONTO A SUBSTRATE - A method generally comprises providing heat to a substrate in at least one buffer chamber and transferring the substrate to at least one deposition chamber that is coupled to the buffer chamber via an conveyor. The method also includes depositing a first set of a plurality of elements, using sputtering, and a second set of a plurality of elements, using evaporation, onto at least a portion of the substrate in the deposition chamber. | 12-11-2014 |
20150021163 | APPARATUS AND METHOD FOR PRODUCING SOLAR CELLS WITH A HEATER APPARATUS - A method and apparatus for forming a solar cell can include a heater apparatus having one or more heater elements in a deposition processing system, a front cover covering the one or more heater elements from a front side, and a back metal reflector mating with the front cover on a back side and enclosing the one or more heater elements. The method can include disposing a plurality of substrates about a plurality of surfaces of a substrate apparatus that is operatively coupled to sequentially feed a substrate within a vacuum chamber, forming an absorber layer over a surface of each one of the plurality of substrates and heating the surface of each one of the plurality of substrates with the heater apparatus as described above. | 01-22-2015 |