Naot
Dorit Naot, Green Bay NZ
Patent application number | Description | Published |
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20100196399 | LDL Receptor-Related Proteins 1 and 2 and Treatment of Bone or Cartilage Conditions - LDL receptor-related proteins 1 and 2 (LRP-1 and LRP-2) and interaction between lactoferrin and LRP-1, LRP-2, or p42/44 MAP kinase in diagnosis and treatment of disorders such as bone or cartilage disorders. Also disclosed are methods of screening for related therapeutic compounds. | 08-05-2010 |
Ira Naot, Zichron Yaakov IL
Patent application number | Description | Published |
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20110096339 | Optical Metrology On Textured Samples - One or more parameters of a sample that includes a textured substrate and one or more overlying films is determined using, e.g., an optical metrology device to direct light to be incident on the sample and detecting light after the incident light interacts with the sample. The acquired data is normalized using reference data that is produced using a textured reference sample. The normalized data is then fit to simulated data that is associated with a model having an untextured substrate and one or more variable parameters. The value(s) of the one or more variable parameters from the model associated with the simulated data having the best fit is reported as measurement result. | 04-28-2011 |
Ira Naot, Migdal Haemek IL
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20080242033 | Self-Aligned LDMOS Fabrication Method Integrated Deep-Sub-Micron VLSI Process, Using A Self-Aligned Lithography Etches And Implant Process - An integrated circuit includes both LDMOS devices and one or more low-power CMOS devices that are concurrently formed on a substrate using a deep sub-micron VLSI fabrication process. The LDMOS polycrystalline silicon (polysilicon) gate structure is patterned using a two-mask etching process. The first etch mask is used to define a first edge of the gate structure located away from the deep body/drain implant. The second etch mask is then used to define a second edge of the gate structure, and the second etch mask is then retained on the gate structure during subsequent formation of the deep body/drain implant. After the deep implant, shallow implants and metallization are formed to complete the LDMOS device. | 10-02-2008 |
20090011576 | Ultra-Violet Protected Tamper Resistant Embedded EEPROM - A pre-metal dielectric structure of a single-poly EEPROM structure includes a UV light-absorbing film, which prevents the charge on a floating gate of the EEPROM structure from being changed in response to UV radiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer, an amorphous silicon layer located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the amorphous silicon layer. | 01-08-2009 |