Hideto Matsuyama
Hideto Matsuyama, Kobe Hyogo JP
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20120219718 | CO2-FACILITATED TRANSPORT MEMBRANE AND METHOD FOR PRODUCING THE SAME | 08-30-2012 |
20130160650 | CO2-FACILITATED TRANSPORT MEMBRANE AND METHOD FOR PRODUCING THE SAME | 06-27-2013 |
Hideto Matsuyama, Kobe-Shi JP
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20100294713 | Separation Membrane Comprising Polyethersulfone, Process for Producing Thereof, and Dope Solution for Membrane Production - [Problem] A dope solution for membrane production comprising polyethersulfone having high strength, high water permeability, a high rejecting ability and excellent contamination resistance, a separation membrane, and a process for producing the separation membrane are provided. | 11-25-2010 |
20130098832 | SEMI-PERMEABLE COMPOSITE MEMBRANE - Provided is a semi-permeable composite membrane which exhibits both high durability and high solute-removal and water-permeation performances. The semi-permeable composite membrane is formed from a porous support membrane and a polymer membrane. The polymer membrane is formed of at least one type of polymer (a) with a positive charge in the repeating unit and at least one type of polymer (b) with a negative charge in the repeating unit and has a crosslinked structure formed by siloxane bonds between the polymer (a) and the polymer (a), between the polymer (a) and the polymer (b), and/or between the polymer (b) and the polymer (b). | 04-25-2013 |
20140377156 | Selectively CO2-Permeable Membrane, Method for Separating CO2 from Mixed Gas, and Membrane Separation Equipment - Disclosed is a CO | 12-25-2014 |
Hideto Matsuyama, Harrison, NY US
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20100144133 | METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A method for manufacturing a semiconductor memory device, includes: forming a stacked unit above a semiconductor substrate, the stacked unit including a plurality of insulating layers alternately stacked with a plurality of electrode layers, the electrode layers being formed of a semiconductor; making a hole in the stacked unit to pass through the electrode layers and the insulating layers; forming an insulating film on a side wall of the hole, the insulating film including a charge storage layer; forming a semiconductor layer in an interior of the hole to align in a stacking direction of the electrode layers and the insulating layers to form a memory string by multiply connecting memory cells in the stacking direction, the memory cell including the electrode layer, the charge storage layer opposing the electrode layer, and the semiconductor layer opposing the charge storage layer; making a trench in a portion of the stacked unit proximal to the memory string to pass through the electrode layers and the insulating layers; forming a metal film on a side wall of the trench; forming a cap film to cover the metal film and fill into the trench; performing heat treatment in the state where the cap film is filled into the trench to cause the metal film to react with the semiconductor of the electrode layers and form a compound between the semiconductor and the metal film at portions of the electrode layers contacting the metal film; removing the cap film and an unreacted excess portion of the metal film; and providing a dielectric substance in the trench after the cap film and the unreacted excess portion are removed. | 06-10-2010 |
Hideto Matsuyama, Yokohama-Shi JP
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20080318408 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion. | 12-25-2008 |
20100003816 | Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed - An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting layer to dry-clean a damage layer produced in the connection hole. A product produced in the connection hole as a result of the dry cleaning is removed by a wet process. An oxide film formed in the connection hole as a result of the wet process is etched by a chemical dry process using a gas including either NF | 01-07-2010 |
Hideto Matsuyama, Kanagawa JP
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20090020883 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes a first contact plug arranged above a semiconductor substrate and using aluminum (Al) as a material; a second contact plug arranged on and in contact with the first contact plug and using a refractory metal material; a first dielectric film arranged on a flank side of the first and second contact plugs; a wire arranged above the second contact plug and using copper (Cu) as a material; a second dielectric film arranged on a flank side of the wire; and a barrier film arranged at least between the wire and the first dielectric film and between the wire and the second dielectric film. | 01-22-2009 |
20090026626 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a dielectric film on a semiconductor substrate; forming an opening in the dielectric film; forming a refractory metal film in the opening; performing a nitriding process to the refractory metal film; removing a nitride of the refractory metal film formed on a side wall of the opening; and depositing tungsten (W) in the opening from which the nitride is removed. | 01-29-2009 |
20090236746 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug. | 09-24-2009 |
Hideto Matsuyama, Kyoto-Shi JP
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20110108478 | Hydrophilic Polyethersulfone Filtration Membrane, Process for Producing the Same, and Dope Solution - A hydrophilic filtration membrane having high chemical resistance, high strength, high water permeability and high blocking performance, and being superior in fouling resistance is provided. A hydrophilic filtration membrane containing a hydrophilic polyethersulfone having a contact angle of 65 to 74 degree, a molecular weight of 10,000 to 100,000, and the number of hydroxy groups of 0.6 to 1.4 per 100 polymerization repeating units. The hydrophilic filtration membrane may additionally contain a polyvinylpyrrolidone having a molecular weight of 10,000 to 1,300,000. | 05-12-2011 |
Hideto Matsuyama, Hyogo JP
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20110168628 | POLYAMIDE HOLLOW FIBER MEMBRANE, AND PRODUCTION METHOD THEREOF - A hollow fiber membrane is produced through a thermally induced phase separation process by dissolving a highly hydrophilic polyamide resin in a high-boiling-point solvent such as an aprotic polar solvent at a temperature of not lower than 100° C. The hollow fiber membrane has a membrane surface having a water contact angle of not greater than 80 degrees, and has a water permeability of not less than 100 L/m | 07-14-2011 |
20120125850 | DEFORMED POROUS HOLLOW FIBER MEMBRANE, PRODUCTION METHOD OF DEFORMED POROUS HOLLOW FIBER MEMBRANE, AND MODULE, FILTRATION DEVICE, AND WATER TREATMENT METHOD IN WHICH DEFORMED POROUS HOLLOW FIBER MEMBRANE IS USED - A porous hollow fiber membrane that is suitable for treatment of liquid containing an inorganic substance and/or an organic substance, is obtained at a low cost performance, and has high water permeability performance, fretting resistance, and drying resistance. A deformed porous hollow fiber membrane according to the present invention is composed of a thermoplastic resin and includes a continuous asperity provided on the periphery in the longitudinal direction of the membrane, in which the periphery of the hollow fiber membrane in the circumferential direction includes continuous projected and depressed parts. | 05-24-2012 |
Hideto Matsuyama, Mie-Ken JP
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20130224965 | SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor manufacturing apparatus, which forms a metal film, and which has the following parts: a processing chamber that carries out the processing of a substrate set inside it, a gas feeding part that feeds the feed gas of the metal film and a plasma generating gas into the processing chamber, a plasma generating part that generates the plasma of the plasma generating gas, and a bias generating part that causes the ions generated by the plasma generating part to impact on the substrate. | 08-29-2013 |
Hideto Matsuyama, Kyoto JP
Patent application number | Description | Published |
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20140352540 | CO2-FACILITATED TRANSPORT MEMBRANE AND PRODUCTION METHOD OF SAME | 12-04-2014 |