Patent application number | Description | Published |
20090038538 | METHOD FOR PRODUCING SINGLE CRYSTAL SILICON CARBIDE - Single crystal SiC, having no fine grain boundaries, a micropipe defect density of 1/cm | 02-12-2009 |
20100284895 | TANTALUM CARBIDE, METHOD FOR PRODUCING TANTALUM CARBIDE, TANTALUM CARBIDE WIRING AND TANTALUM CARBIDE ELECTRODE - It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide. | 11-11-2010 |
20120175639 | TANTALUM CARBIDE, METHOD FOR PRODUCING TANTALUM CARBIDE, TANTALUM CARBIDE WIRING AND TANTALUM CARBIDE ELECTRODE - It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide. | 07-12-2012 |
Patent application number | Description | Published |
20080277794 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device. | 11-13-2008 |
20100007024 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor IC device which includes a circuit region and a peripheral region on a main surface of a semiconductor substrate, a first insulating film formed over the main surface, external terminals arranged in the peripheral region and formed over the first insulating film, a conductive guard ring formed over the first insulating film and provided around the external terminals, and second insulating films formed in the internal region and the peripheral region, the second insulating film in the peripheral region is formed over the first insulating film and over the guard ring and is contacting the external terminals, the second insulating films of the circuit region and that of the peripheral region are separately formed and are isolated from each other. Separate second insulating film may be formed over the wirings of one or more of existing wiring levels of the semiconductor device. | 01-14-2010 |