Patent application number | Description | Published |
20090039263 | PATTERN MEASUREMENT APPARATUS - Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information. | 02-12-2009 |
20100202654 | PATTERN MEASUREMENT APPARATUS - Mutual compatibility is established between the measurement with a high magnification and the measurement in a wide region. A pattern measurement apparatus is proposed which adds identification information to each of fragments that constitute a pattern within an image obtained by the SEM, and which stores the identification information in a predetermined storage format. Here, the identification information is added to each fragment for distinguishing between one fragment and another fragment. According to the above-described configuration, it turns out that the identification information is added to each fragment on the SEM image which has possessed no specific identification information originally. As a result, it becomes possible to implement the SEM-image management based on the identification information. | 08-12-2010 |
20130234019 | GLOBAL ALIGNMENT USING MULTIPLE ALIGNMENT PATTERN CANDIDATES - In order to provide a technique for performing global alignment (detecting position shift and rotation of a wafer) stably and automatically using an optical microscope, as a pattern for global alignment, multiple alignment pattern candidates are calculated ( | 09-12-2013 |
Patent application number | Description | Published |
20140301916 | HOLDER FOR TRANSFERRING TEST TUBE - A test tube holder holds various types of test tubes substantially perpendicular, and is structured to be durable against extraction and insertion of the test tubes. The test tube holder includes a housing part having a hollow portion, a holding part positioned on an upper side of the housing part and having an opening portion, which accepts a test tube, and a housing portion, which houses the accepted test tube. An elastic part is formed inside the holding part so as to abut on the housed test tube. The test tube holder has a weight housed inside the hollow portion. The holding part and the elastic part may be integrally formed. Inside the hollow portion of the housing part, besides the weight, an individual identification tag, an electromagnetic wave absorbent, and a support member for a tapered test tube can be housed in accordance with usage. | 10-09-2014 |
20150357824 | SPECIMEN PROCESSING SYSTEM - In the specimen processing system in which each of a specimen input portion which inputs a specimen, a specimen processing portion which processes the specimen, a specimen recovery portion which recovers the processed specimen, and a specimen transporting line which transports the specimen between the specimen input portion, the specimen processing portion, and the specimen recovery portion, are connected to each other by a plurality of processing (analysis) units, the processing (analysis) unit is provided with a CPU that controls the operation, and provided with a mechanism control portion which receives an electric signal from the CPU and operates the mechanism parts in the processing unit, and the mechanism part control portion includes means which can supply and stop the power of one or more arbitrarily specified mechanism parts by the electric signal from the CPU. | 12-10-2015 |
Patent application number | Description | Published |
20080286162 | SAMPLE HANDLING SYSTEM - The present invention provides a sample processing system for analyzing, preprocessing, or carrying out other operations for a biological sample such as blood or urea. With the sample processing system, it is possible to store samples to be stored in the thermally insulated state or specimens required for accuracy control in the thermally insulated state for preventing evaporation of denaturing of the samples and specimens by the unit of a transfer rack. Also it is possible to carry in or out the samples rack by rack according to the necessity. | 11-20-2008 |
20120039771 | AUTOMATIC ANALYZER AND SAMPLE TREATMENT APPARATUS - A sample treatment apparatus is designed to directly monitor a pressure signal from a pressure sensor to examine pressure fluctuations resulting from a sample's sway before a discharge of the sample, so that the discharge is performed after the confirmation of the absence of pressure changes. The apparatus has a detection function that allows a discharge to be started even before a pressure fluctuation vanishes completely, by allowing the operator to set a desired number of pressure monitorings, monitoring time, or pressure amplitude. The detection function also allows an alarm to be raised when a pressure fluctuation has not fallen within a given range. The sample treatment apparatus therefore allows discharge of more accurate amounts of samples. | 02-16-2012 |
20120129673 | CENTRIFUGAL SEPARATOR - The weight difference is limited between buckets ( | 05-24-2012 |
20120133492 | ARTICLE CONVEYING SYSTEM AND SAMPLE PROCESSING SYSTEM - An object of the present invention is to provide a sample processing system, wherein writing to each RFID is equalized to eliminate unevenness in the use of sample containers. | 05-31-2012 |
20130202486 | SAMPLE PROCESSING SYSTEM - This invention provides a sample processing system in which only one sample container is rested in one holder, the system being contemplated to prevent a mix-up of samples from occurring. | 08-08-2013 |
20150285828 | SAMPLE HANDLING SYSTEM - A sample processing system is configured for analyzing, preprocessing, or carrying out other operations for a biological sample such as blood or urea. With the sample processing system, it is possible to store samples to be stored in a thermally insulated state or specimens required for accuracy control in the thermally insulated state for preventing evaporation or denaturing of the samples and specimens. Also it is possible to carry in or out the samples, rack by rack, according to necessity. Further, the sample processing system is provided with a buffer unit in a cold container having a capability for cold storage and also by accessing a sample rack at random for carrying in or out a rack with a transfer mechanism provided outside of the cold container. | 10-08-2015 |
Patent application number | Description | Published |
20160049375 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate which includes a first face. The device also includes a buffer layer, a semiconductor layer, source and drain electrodes, and a gate electrode. A trench is formed on the semiconductor layer so that the trench surrounds the source electrode, the drain electrode, and the gate electrode in a plan view, the trench passes through the semiconductor layer and the buffer layer, and a bottom of the trench reaches at least an inside of the substrate. A distance from the first face of the substrate to the bottom of the trench is 100 nm or more in a thickness direction of the substrate. | 02-18-2016 |
20160086939 | SEMICONDUCTOR DEVICE - A first contact, a second impurity region, and a second low-concentration impurity region form a Schottky barrier diode. The second impurity region has the same impurity concentration as those of first impurity regions, and thus can be formed in the same process as forming the first impurity regions. In addition, the second low-concentration impurity region has the same impurity concentration as those of first low-concentration impurity regions, and thus can be formed in the same process as forming the first low-concentration impurity regions. | 03-24-2016 |
Patent application number | Description | Published |
20090311840 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming, over a substrate, a gate insulating film containing a high-k insulating film which is composed of a material having a dielectric constant larger than that of silicon dioxide film; forming a gate electrode containing a metal over the gate insulating film; forming extension regions by implanting an dopant into the substrate using the gate electrode as a mask; and annealing the substrate, having the dopant implanted therein, by flash lamp annealing or laser annealing; wherein the annealing further includes: a first step irradiating a substrate with a light pulse having a predetermined peak intensity; and a second step irradiating a substrate with light pulses having peak intensities lower than that of the light pulse used in the first step. | 12-17-2009 |
20130168690 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A first nitride semiconductor layer contains Ga. The first nitride semiconductor layer is, for example, a GaN layer, an AlGaN layer, or an AlInGaN layer. Then, an aluminum oxide layer has tetra-coordinated Al atoms each surrounded by four O atoms and hexa-coordinated Al atoms each surrounded by six O atoms as Al atoms in the interface region with respect to the first nitride semiconductor layer. The interface region is a region apart, for example, by 1.5 nm or less from the interface with respect to the first nitride semiconductor layer. Then, in the interface region, the tetra-coordinated Al atoms are present by 30 at % or more and less than 50 at % based on the total number of Al atoms. | 07-04-2013 |
20130264576 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device, in which the generation of interface states in the interface region between a nitride semiconductor layer and an aluminum oxide layer is suppressed, includes a first nitride semiconductor layer and an aluminum oxide layer. The first nitride semiconductor layer includes Ga. The aluminum oxide layer directly contacts the upper surface of the first nitride semiconductor layer, and includes H (hydrogen) atoms at least within a defined region from the interface with the first nitride semiconductor layer. In addition, the peak value of an H atom concentration in the above region is in a range of 1×10 | 10-10-2013 |
20140084386 | SEMICONDUCTOR DEVICE - A first contact, a second impurity region, and a second low-concentration impurity region form a Schottky barrier diode. The second impurity region has the same impurity concentration as those of first impurity regions, and thus can be formed in the same process as forming the first impurity regions. In addition, the second low-concentration impurity region has the same impurity concentration as those of first low-concentration impurity regions, and thus can be formed in the same process as forming the first low-concentration impurity regions. | 03-27-2014 |
20140363982 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A first nitride semiconductor layer contains Ga. The first nitride semiconductor layer is, for example, a GaN layer, an AlGaN layer, or an AlInGaN layer. Then, an aluminum oxide layer has tetra-coordinated Al atoms each surrounded by four ◯ atoms and hexa-coordinated Al atoms each surrounded by six ◯ atoms as Al atoms in the interface region with respect to the first nitride semiconductor layer. The interface region is a region apart, for example, by 1.5 nm or less from the interface with respect to the first nitride semiconductor layer. Then, in the interface region, the tetra-coordinated Al atoms are present by 30 at % or more and less than 50 at % based on the total number of Al atoms. | 12-11-2014 |
Patent application number | Description | Published |
20100021822 | MICROPOROUS POLYOLEFIN MEMBRANE - The present invention provides a microporous polyolefin membrane having a porosity of 45% to 85% wherein the microporous polyolefin membrane easily absorbs the strain produced when the membrane undergoes compression, and retains excellent permeability and excellent electrical insulation performance even after compression by setting the maximum pore diameter at 0.1 μm to 0.23 μm, the MD elastic modulus at 400 to 2,000 MPa, and the ratio MD elastic modulus/TD elastic modulus at 1.5 to 9. | 01-28-2010 |
20110020692 | SEPARATOR FOR METAL HALIDE BATTERY - It is an object of the present invention to provide a separator for a metal halide battery which can maintain a low bromine permeability for a long duration and can maintain battery performance for a long duration. The present invention provides a separator for a metal halide battery having a bromine diffusion coefficient after 240 hours of less than 4.2×10 | 01-27-2011 |
20140335396 | Microporous Membrane - A microporous membrane having a polyolefin microporous membrane and a surfactant adhering to the polyolefin microporous membrane, wherein the surfactant includes a surfactant (A) having a solubility in 100 g of water of 5 g or more and a surfactant (B) having a solubility in 100 g of water of less than 0.1 g, the surfactants (A) and (B) are adhered in an amount of 1 to 40% by mass in total based on 100% by mass of the polyolefin microporous membrane, and the polyolefin microporous membrane has a tortuosity factor of more than 2.0. | 11-13-2014 |