Patent application number | Description | Published |
20080217628 | LIGHT EMITTING DEVICE - The present invention relates to a light emitting device having a light emitting diode package with a plurality of light emitting cells and an integrated electronic element formed on the same substrate. The light emitting device comprises a substrate, a light emitting cell block having a first array with a plurality of light emitting cells formed on one region of the substrate arranged therein, a second array formed on the same region as the first array, and electrodes for AC power connecting the first and second arrays in reverse parallel; and at least one integrated electronic element formed on another region of the same substrate as the light emitting cell block. | 09-11-2008 |
20080217637 | Light Emitting Diode and Method of Fabricating the Same - The present invention relates to a light emitting diode and a method of fabricating the same, wherein the distance between a fluorescent substance and a light emitting diode chip is uniformly maintained to enhance luminous efficiency. To this end, there is provided a light emitting diode comprising at least one light emitting diode chip, lead terminals for use in applying electric power to the light emitting diode chip, and a frame that is used for mounting the light emitting diode chip thereon and is formed to have a predetermined height and a shape corresponding to that of the light emitting diode chip. | 09-11-2008 |
20090065762 | LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE - A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure. | 03-12-2009 |
20090085048 | AC LIGHT EMITTING DIODE - Disclosed is a light emitting diode (LED) operated by being directly connected to an AC power source. An AC LED according to the present invention comprises a plurality of light emitting cells two-dimensionally arranged on a single substrate; and wires electrically connecting the light emitting cells; wherein the light emitting cells are connected in series by the wires to form a serial array, the single substrate is a non-polar substrate, and the light emitting cells have non-polar GaN-based semiconductor layers grown on the non-polar substrate. | 04-02-2009 |
20100002454 | LIGHT EMITTING DEVICE - A light emitting device is disclosed. The light emitting device may include a light emitting diode (LED) for emitting light and phosphor adjacent to the LED. The phosphor may be excitable by light emitted by the LED and may include a first compound having a host lattice comprising first ions and oxygen. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and first compound may have an Olivin crystal structure, a β-K2SO4 crystal structure, a trigonal Glaserite (K | 01-07-2010 |
20100096977 | AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME - Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated. | 04-22-2010 |
20100102336 | LIGHT EMITTING DIODE FOR AC OPERATION - The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit. | 04-29-2010 |
20100102337 | LIGHT EMITTING DIODE FOR AC OPERATION - The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit. | 04-29-2010 |
20100141109 | LIGHT EMITTING DEVICE - According to the present invention, there is provided a light emitting device, which comprises at least one laser diode configured to emit light in at least one first wavelength region selected from spectrum regions including ultraviolet ray, blue light and green light; and a light emitting material for emitting light in a second wavelength region by the light in the first wavelength region emitted from the laser diode, the second wavelength region being different from the first wavelength region, wherein a color-mixed light is made by the light in the first wavelength region and the light in the second wavelength region. Since the laser diode having strong straightness is used as a light emission source, the color-mixed light implemented by the light emitting device of the present invention has strong straightness, so that it may be effectively used for long-distance illumination and flash. | 06-10-2010 |
20100165645 | LIGHT EMITTING DEVICE - A light emitting device is disclosed. The light emitting device may include a light emitting diode (LED) for emitting light and phosphor adjacent to the LED. The phosphor may be excitable by light emitted by the LED and may include a first compound having a host lattice comprising first ions and oxygen. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and first compound may have an Olivin crystal structure, a β-K2SO4 crystal structure, a trigonal Glaserite (K | 07-01-2010 |
20100202131 | LED PACKAGE AND BACK LIGHT UNIT USING THE SAME - Disclosed is a light emitting diode (LED) package. The LED package comprises a package body having a cavity and a stepped portion positioned on a top portion of the cavity; an LED chip mounted on a bottom surface of the cavity; an encapsulant formed in the cavity to cover the LED chip; and a lens having a pattern and attached to the stepped portion on the encapsulant. | 08-12-2010 |
20100207132 | LIGHT EMITTING DEVICE EMPLOYING NON-STOICHIOMETRIC TETRAGONAL ALKALINE EARTH SILICATE PHOSPHORS - Disclosed is a light emitting device employing non-stoichiometric tetragonal Alkaline Earth Silicate phosphors. The light emitting device comprises a light emitting diode emitting light of ultraviolet or visible light, and non-stoichiometric luminescent material disposed around the light emitting diode. The luminescent material adsorbs at least a portion of the light emitted from the light emitting diode and emits light having a different wavelength from the absorbed light. The non-stoichiometric luminescent material has tetragonal crystal structure, and contains more silicon in the crystal lattice than that in the crystal lattice of silicate phosphors having stoichiometric crystal structure. The luminescent material is represented as the formula (Ba | 08-19-2010 |
20100301371 | LIGHT EMITTING DEVICE - A light emitting device can be characterized as including a light emitting diode configured to emit light and a phosphor configured to change a wavelength of the light. The phosphor substantially covers at least a portion of the light emitting diode. The phosphor includes a compound having a host material. Divalent copper ions and oxygen are components of the host material. | 12-02-2010 |
20100327229 | LUMINESCENT SUBSTANCES HAVING Eu2+-DOPED SILICATE LUMINOPHORES - Exemplary embodiments of the present invention disclose inorganic luminescent substances with Eu | 12-30-2010 |
20110050090 | LIGHT EMITTING DEVICE EMPLOYING LUMINESCENT SUBSTANCES WITH OXYORTHOSILICATE LUMINOPHORES - A light emitting device having oxyorthosilicate luminophores is disclosed. The light emitting device includes a light emitting diode and luminescent substances disposed around the light emitting diode, to adsorb at least a portion of light emitted from the light emitting diode and emitting light having different wavelength from that of the absorbed light. The luminescent substances have Eu | 03-03-2011 |
20110108866 | LED PACKAGE AND METHOD FOR FABRICATING THE SAME - An LED package is disclosed herein. The disclosed LED package comprises a base having an LED chip mounted thereon, an encapsulation member formed by a light-transmittable resin to encapsulate the LED chip, and a housing formed to expose a top portion of the encapsulation member and to encompass a side surface of the encapsulation member, wherein the encapsulation member is formed by a transfer molding process using a mold to have a predetermined shape. Further, the housing may be light-transmittable. | 05-12-2011 |
20110114969 | LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR, METHOD OF FABRICATING THE SAME, AND LIGHT EMITTING DIODE PACKAGE HAVING DISTRIBUTED BRAGG REFLECTOR - An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. | 05-19-2011 |
20110147662 | STRONTIUM OXYORTHOSILICATE PHOSPHORS HAVING IMPROVED STABILITY UNDER A RADIATION LOAD AND RESISTANCE TO ATMOSPHERIC HUMIDITY - Exemplary embodiments of the present invention relate to inorganic phosphors based on silicate compounds having improved stability under a resulting radiation load and resistance to atmospheric humidity, which are capable of converting higher-energy excitation radiation, i.e. ultraviolet (UV) or blue light, with high efficiency into a longer-wavelength radiation which may be in the visible spectral range. A calcium molar fraction x having a value between 0 and 0.05 is added to a silicate phosphor having the general formula Sr | 06-23-2011 |
20110284884 | LIGHT EMITTING DIODE CHIP FOR HIGH VOLTAGE OPERATION AND LIGHT EMITTING DIODE PACKAGE INCLUDING THE SAME - A light emitting diode (LED) chip for high voltage operation and an LED package including the same arc disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m≦n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V. | 11-24-2011 |
20120001205 | LIGHT EMITTING DEVICE HAVING STRONTIUM OXYORTHOSILICATE TYPE PHOSPHORS - Exemplary embodiments of the present invention relate to light emitting devices including strontium oxyorthosilicate-type phosphors. The light emitting device includes a light emitting diode, which emits light in the UV or visible range, and phosphors disposed around the light emitting diode to absorb light emitted from the light emitting diode and emit light having a different wavelength from the absorbed light. The phosphors include an oxyorthosilicate phosphor having a general formula of Sr | 01-05-2012 |
20120037850 | SURFACE-MODIFIED SILICATE LUMINOPHORES - A surface-modified silicate luminophore includes a silicate luminophore and a coating includes at least one of (a) a fluorinated coating including a fluorinated inorganic agent, a fluorinated organic agent, or a combination of fluorinated inorganic and organic agents, the fluorinated coating generating hydrophobic surface sites and (b) a combination of the fluorinated coating and at least one moisture barrier layer. The moisture barrier layer includes MgO, Al | 02-16-2012 |
20120126174 | NON STOICHIOMETRIC TETRAGONAL COPPER ALKALINE EARTH SILICATE PHOSPHORS AND METHOD OF PREPARING THE SAME - Disclosed are non stoichiometric Copper Alkaline Earth Silicate phosphors activated by divalent europium for using them as high temperature stable luminescent materials for ultraviolet or daylight excitation. The phosphors are represented as the formula (Ba | 05-24-2012 |
20120132939 | LIGHT EMITTING DEVICE EMPLOYING NON-STOICHIOMETRIC TETRAGONAL ALKALINE EARTH SILICATE PHOSPHORS - Disclosed is a light emitting device employing non-stoichiometric tetragonal Alkaline Earth Silicate phosphors. The light emitting device comprises a light emitting diode emitting light of ultraviolet or visible light, and non-stoichiometric luminescent material disposed around the light emitting diode. The luminescent material adsorbs at least a portion of the light emitted from the light emitting diode and emits light having a different wavelength from the absorbed light. The non-stoichiometric luminescent material has tetragonal crystal structure, and contains more silicon in the crystal lattice than that in the crystal lattice of silicate phosphors having stoichiometric crystal structure. The luminescent material is represented as the formula (Ba | 05-31-2012 |
20120153259 | LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE - A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure. | 06-21-2012 |
20120181481 | STRONTIUM OXYORTHOSILICATE PHOSPHORS HAVING IMPROVED STABILITY UNDER A RADIATION LOAD AND RESISTANCE TO ATMOSPHERIC HUMIDITY - Exemplary embodiments of the present invention relate to inorganic phosphors based on silicate compounds having improved stability under a resulting radiation load and resistance to atmospheric humidity, which are capable of converting higher-energy excitation radiation, i.e. ultraviolet (UV) or blue light, with high efficiency into a longer-wavelength radiation which may be in the visible spectral range. A calcium molar fraction x having a value between 0 and 0.05 is added to a silicate phosphor having the general formula Sr | 07-19-2012 |
20120205674 | LIGHT EMITTING DEVICE HAVING SURFACE-MODIFIED SILICATE LUMINOPHORES - Exemplary embodiments of the present invention relate to a light emitting device including a light emitting diode and a surface-modified luminophore. The surface-modified luminophore includes a silicate luminophore and a fluorinated coating arranged on the silicate luminophore. | 08-16-2012 |
20130009553 | ILLUMINATION SYSTEM - An illumination system includes multiple light emitting devices arranged in an area so as to be spaced apart from each other. Each light emitting device includes multiple light emitting diode arrays each of which has one light emitting diode or a plurality of light emitting diodes connected in series. The numbers of the light emitting diodes included in each light emitting diode arrays differs from each other. A controller is configured to establish one or more groups each including one or more light emitting devices and adjust an illumination state of each light emitting device by controlling the driving state of the one or more light emitting diode arrays included in each light emitting device. The controller may select the number of light emitting devices included in each group based on an external condition. | 01-10-2013 |
20130026498 | SUBSTRATE ASSEMBLY FOR CRYSTAL GROWTH AND FABRICATING METHOD FOR LIGHT EMITTING DEVICE USING THE SAME - A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates. | 01-31-2013 |
20130026518 | WAFER LEVEL LED PACKAGE AND METHOD OF FABRICATING THE SAME - Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided. | 01-31-2013 |
20130049574 | LIGHT EMITTING DEVICE - A light emitting device is disclosed. The light emitting device may include a light emitting diode (LED) for emitting light and phosphor adjacent to the LED. The phosphor may be excitable by light emitted by the LED and may include a first compound having a host lattice comprising first ions and oxygen. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and first compound may have an Olivin crystal structure, a β-K2SO4 crystal structure, a trigonal Glaserite (K | 02-28-2013 |
20130264600 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING GANG BONDING AND SEMICONDUCTOR DEVICE FABRICATED BY THE SAME - A method of fabricating a semiconductor device using gang bonding and a semiconductor device fabricated by the same, the method comprising preparing a support substrate having a plurality of semiconductor stack structures aligned on a top thereof. Each of the semiconductor stack structures comprises a first conductive semiconductor layer, a second conductive semiconductor layer and an active region interposed between the first and second conductive semiconductor layers. A member having first lead electrodes and second lead electrodes is prepared to correspond to the plurality of semiconductor stack structures. Then, the semiconductor stack structures are bonded to the member while maintaining the semiconductor stack structures on the support substrate. After the semiconductor stack structures are bonded to the member, the member is divided. | 10-10-2013 |
20130277682 | LIGHT EMITTING ELEMENT WITH A PLURALITY OF CELLS BONDED, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE USING THE SAME - The present invention relates to a light emitting device, including a conductive substrate, vertical light emitting cells arranged on the conductive substrate, an insulating layer interposed between the conductive substrate and the vertical light emitting cells, and a wire electrically connecting the vertical light emitting cells. | 10-24-2013 |
20130307016 | LED MODULE AND LIGHTING ASSEMBLY - Disclosed are a light emitting diode (LED) module and a lighting assembly. The lighting assembly comprises a light emitting device, a driver integrated circuit device for driving the light emitting device, a heat sink for dissipating heat generated from the light emitting device, and a heat shielding portion for blocking thermal interference between the driver integrated circuit device and the light emitting device. In the LED module, the driver integrated circuit device is disposed on the heat shielding portion. Accordingly, it is possible to block thermal interference between the light emitting device and the driver integrated circuit device and to decrease the size of the lighting assembly. | 11-21-2013 |
20140028204 | LIGHT EMITTING DEVICE FOR AC POWER OPERATION - Exemplary embodiments of the present invention disclose a light-emitting device including a first power source connection terminal and a second power source connection terminal, the first and second power source connection terminals configured to be connected to an external power source, and a plurality of light emitting cell arrays, each of the plurality of light emitting cell arrays being connected in parallel to one another between the first and the second power source connection terminals, each of the plurality of light emitting cell arrays comprising serially connected light emitting cells. Each of the light emitting cells includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an electrode pad disposed on the second conductivity-type semiconductor layer. | 01-30-2014 |
20140061503 | SURFACE-MODIFIED QUANTUM DOT LUMINOPHORES - A surface-modified quantum dot luminophore includes a quantum dot luminophore and a coating includes a fluorinated coating including a fluorinated inorganic agent, a fluorinated organic agent, or a combination of fluorinated inorganic and organic agents, the fluorinated coating generating hydrophobic surface sites and the coating is disposed on the surface of the silicate luminophore. | 03-06-2014 |
20140061709 | WAFER LEVEL LED PACKAGE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting diode (LED) package and a method of fabricating the same. The LED package includes a first substrate, a semiconductor stack disposed on a front surface of the first substrate, a second substrate including a first lead electrode and a second lead electrode, a plurality of connectors electrically connecting the semiconductor stack to the first and second lead electrodes, and a wavelength converter covering a rear surface of the first substrate. The semiconductor stack includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. | 03-06-2014 |
20140110739 | LED PACKAGE AND METHOD FOR FABRICATING THE SAME - A light emitting diode (LED) package according to an exemplary embodiment of the present invention includes a base including a first lead terminal and a second lead terminal, an LED chip disposed on the base, a housing disposed on the base, the housing having a cavity in which the LED chip is disposed, and an encapsulation member having a side surface contacting the housing. The first lead terminal and the second lead terminal each have a first surface and a second surface opposite the first surface, and have an unbent form, respectively. The second surface is exposed to the outside of the LED package. | 04-24-2014 |
20140240975 | LIGHT EMITTING DEVICE - A light emitting device includes a first light emitting diode chip comprising a red wavelength, a second light emitting diode chip comprising a different red wavelength from the wavelength of the first light emitting diode chip, and a plurality of third light emitting diode chips disposed around the first and second light emitting diode chips. The light emitting device emits light in a wavelength region similar to that of solar light, thereby improving color rendition. | 08-28-2014 |
20140306257 | LED PACKAGE AND METHOD FOR FABRICATING THE SAME - A light emitting diode (LED) package according to an exemplary embodiment of the present invention includes a base including a first lead terminal and a second lead terminal, an LED chip disposed on the base, a housing disposed on the base, the housing having a cavity in which the LED chip is disposed, and an encapsulation member having a side surface contacting the housing. The first lead terminal and the second lead terminal each have a first surface and a second surface opposite the first surface, and have an unbent form, respectively. The second surface is exposed to the outside of the LED package. | 10-16-2014 |
20140328056 | AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME - An AC light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. A first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip, and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence period of the second long-persistent phosphor is different from that of the first long-persistent phosphor. | 11-06-2014 |
20140334148 | BACKLIGHT MODULE, METHOD FOR DRIVING SAME AND DISPLAY DEVICE USING SAME - An LED lighting apparatus is provided. The LED lighting apparatus comprises: an LED module; a heat dissipation member; and a connection member for connecting the LED module and the heat dissipation member mechanically and heat-conductively. The heat dissipation member comprises a reflective surface for reflecting light from the LED module. | 11-13-2014 |
20140339566 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate. | 11-20-2014 |
20140353679 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency. | 12-04-2014 |
20140355293 | INDIRECT LIGHTING APPARATUS - An indirect lighting apparatus includes a light-emitting device, a reflector disposed above the light-emitting device, and a wavelength conversion layer disposed on a surface of the reflector facing the light-emitting device and spaced apart from the light-emitting device. The wavelength conversion layer includes phosphors configured to change the wavelength of light emitted from the light-emitting device. The reflector is configured to reflect light emitted from the wavelength conversion layer, back towards the wavelength conversion layer. | 12-04-2014 |
20140362603 | LIGHT SOURCE MODULE AND BACKLIGHT UNIT HAVING THE SAME - Disclosed is a light source module capable of realizing a slim structure and providing excellent luminous efficiency. The light source module includes a circuit board, a light emitting diode chip mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a wavelength conversion layer disposed on the light emitting diode chip, and a reflector covering an upper surface and at least one of side surfaces of the light emitting diode chip. | 12-11-2014 |
20150034979 | LIGHT EMITTING DIODE ASSEMBLY - Disclosed is a light emitting diode assembly. The light emitting diode assembly comprised: a red light emitting diode chip; a short-wavelength light emitting diode chip emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member for dispersing most of the heat generated in the short wavelength light emitting diode chip; and a second heat-dispersion member for dispersing most of the heat generated in the red light emitting diode chip. Further, the second heat-dispersion member has heat dispersion performance relatively superior to that of the first heat dispersion member. Thus, spectrum movement in the red light emitted from the red light emitting diode chip may be prevented so as to prevent a color-coordinate transformation during the operation time of same. | 02-05-2015 |
20150062966 | LIGHT SOURCE MODULE AND BACKLIGHT UNIT HAVING THE SAME - A light source module includes a circuit board, board pads disposed on the circuit board, and a light emitting diode chip disposed on the board pads. The light emitting diode chip includes a substrate and a semiconductor stacking part disposed between the substrate and the circuit board, and the substrate includes an inclined part disposed at an upper portion thereof and a discharging part disposed at one side surface thereof. | 03-05-2015 |
20150064064 | MOBILE DISINFECTOR USING UV LED - A mobile disinfector using UV LEDs can include: a case forming an exterior structure of the disinfector; a cover including two parts coupled to respective sides of the case and including openings formed on the cover; and LED units exposed to outside through the openings formed on the cover. Since the cover is coupled to the case such that an angle between the cover and the case is adjusted, an irradiation angle of light emitted to the outside from the LED units is controlled. | 03-05-2015 |
20150084085 | LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND METHOD OF FABRICATING THE SAME - A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed. | 03-26-2015 |
20150085225 | LED BACKLIGHT UNIT AND LED DISPLAY DEVICE INCLUDING THE SAME - A light emitting diode (LED) backlight unit includes: a top cover; a bottom cover connected to the top cover to constitute a housing and spaced apart under a liquid crystal panel; LEDs disposed on a first surface defined by an inner top surface of the bottom cover; and electrode patterns arranged on the first surface. | 03-26-2015 |
20150085527 | LIGHT SOURCE MODULE, FABRICATION METHOD THEREFOR, AND BACKLIGHT UNIT INCLUDING THE SAME - A light source module, a fabrication method therefore, and a slim backlight unit including the same. The light source module includes a light emitting diode (LED) chip electrically connected to a substrate through a lower surface thereof, a wavelength conversion layer formed on the LED chip and enclosing at least the light exit face of the LED chip, and a reflector formed on a region of the LED chip excluding the light exit face. | 03-26-2015 |