Patent application number | Description | Published |
20100141097 | THIN FILM PIEZOELECTRIC ACTUATORS - A MEMS device with a thin piezoelectric actuator is described. A substrate with a first surface has a crystalline orientation prompting layer on the first surface. A piezoelectric portion contacts the crystalline orientation prompting layer and has an orientation corresponding to the orientation of the crystalline orientation prompting layer. A dielectric material surrounds the piezoelectric portion. The dielectric material is formed of an inorganic material. | 06-10-2010 |
20100147680 | SHAPED ANODE AND ANODE-SHIELD CONNECTION FOR VACUUM PHYSICAL VAPOR DEPOSITION - A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, a shield, and an anode. The cathode is inside the vacuum chamber, and the cathode includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The anode includes an annular body and an annular flange projecting inwardly from the annular body, and the annular flange is positioned to define a volume below the target for the generation of plasma. | 06-17-2010 |
20100147681 | CHAMBER SHIELD FOR VACUUM PHYSICAL VAPOR DEPOSITION - A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, and anode, and a shield. The cathode is inside the vacuum chamber and includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber and includes an annular body and a plurality of concentric annular projections extending from the annular body. | 06-17-2010 |
20100206713 | PZT Depositing Using Vapor Deposition - Methods and apparatus for sputtering a target material, such as PZT, can include positioning a conductive grid between a target and a substrate. The target, the substrate, and a sputtering gas can be contained in a chamber, and power of a first RF source can be applied so as to maintain a plasma in the chamber. Power of a second RF source can be applied to the conductive grid. Target material can be sputtered from the target onto the substrate. Positioning of the conductive grid and application of power by the second RF source can affect properties of sputter deposition of the target material. For example, the second RF source and the conductive grid can be part of a capacitive circuit configured such that voltage change in the capacitive circuit affects properties of the sputtering gas and, in turn, properties of a sputter deposition process. | 08-19-2010 |
20100206714 | PHYSICAL VAPOR DEPOSITION WITH PHASE SHIFT - A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate. | 08-19-2010 |
20100206718 | PHYSICAL VAPOR DEPOSITION WITH IMPEDANCE MATCHING NETWORK - A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate. | 08-19-2010 |
20100213795 | Sputtered Piezoelectric Material - Piezoelectric actuators having a composition of Pb | 08-26-2010 |
20110117311 | ETCHING PIEZOELECTRIC MATERIAL - Piezoelectric material is shaped by plasma etching to form deep features with high aspect ratios, and desired geometries. | 05-19-2011 |
20110209984 | Physical Vapor Deposition With Multi-Point Clamp - A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and a plurality of conductive electrodes attached to the clamp, each electrode configured to compress when contacted by the substrate. | 09-01-2011 |
20110209985 | Physical Vapor Deposition With Heat Diffuser - A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, and a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, and a heater to heat the substrate supported on the chuck. The chuck includes a body and a graphite heat diffuser supported on the body and configured to contact the substrate. | 09-01-2011 |
20110209989 | PHYSICAL VAPOR DEPOSITION WITH INSULATED CLAMP - A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, the cathode configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and an insulator configured to electrically isolate the substrate from the clamp. | 09-01-2011 |
20120177815 | Sputtered Piezoelectric Material - Piezoelectric actuators having a composition of Pb | 07-12-2012 |
20130284589 | RADIO FREQUENCY TUNED SUBSTRATE BIASED PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD OF OPERATION - A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate. | 10-31-2013 |
20140240404 | PASSIVATION OF RING ELECTRODES - An inkjet device includes a pumping chamber bounded by a wall, a piezoelectric layer disposed above the pumping chamber, a ring electrode having an annular lower portion disposed on the piezoelectric layer. A moisture barrier layer covers a remainder of the piezoelectric layer over the pumping chamber that is not covered by the annular lower portion of the ring electrode. | 08-28-2014 |
20150054387 | MULTI-LAYERED THIN FILM PIEZOELECTRIC DEVICES & METHODS OF MAKING THE SAME - Multi-layered thin film piezoelectric material stacks and devices incorporating such stacks. In embodiments, an intervening material layer is disposed between two successive piezoelectric material layers in at least a portion of the area of a substrate over which the multi-layered piezoelectric material stack is disposed. The intervening material may serve one or more function within the stack including, but not limited to, inducing an electric field across one or both of the successive piezoelectric material layers, inducing a discontinuity in the microstructure between the two successive piezoelectric materials, modulating a cumulative stress of the piezoelectric material stack, and serving as a basis for varying the strength of an electric field as a function of location over the substrate. | 02-26-2015 |