Patent application number | Description | Published |
20080241828 | DETECTION OF DNA METHYLATION USING RAMAN SPECTROSCOPY - Epigenetic events such as DNA methylation play important roles in the regulation of gene expression. DNA methylation patterns have been found to differ between healthy and diseased tissue, such as healthy and cancerous tissue, thereby allowing DNA methylation to serve as a biomarker for disease states. Embodiments of the invention provide methods for detecting methylation patterns in DNA polymers. Methylation patterns are detected, in part, through the use of surface enhanced Raman spectroscopy (SERS). SERS provides a sensitive structure-based technique for chemical analysis. | 10-02-2008 |
20100167938 | Nucleic acid sequencing and electronic detection - Embodiments of the present invention provide devices methods for sequencing DNA using arrays of reaction regions containing sensors to monitor changes in solutions or bound molecules contained in the reaction regions. Additional embodiments provide devices and methods for sequencing DNA using arrays of reaction regions that allow for optical monitoring of solutions in the reaction regions. Chemical amplification schemes that allow DNA to be sequenced in which multiple nucleotide addition reactions are performed to detect the incorporation of a base are disclosed. By sequencing DNA using parallel reactions contained in large arrays, DNA can be rapidly sequenced. | 07-01-2010 |
20100330553 | Chemically induced optical signals and DNA sequencing - Methods for sequencing nucleic acids are presented. Sequencing is accomplished through the chemical amplification of the products of DNA synthesis and the detection of the chemically amplified products. In embodiments of the invention, a substrate is provided having a plurality of molecules of DNA to be sequenced attached and a plurality of molecules capable of chelating pyrophosphate ions attached, the DNA molecules to be sequenced are primed, and a next complementary nucleotide is incorporated and excised a plurality of times leading to the buildup of pyrophosphate ions locally around the DNA molecule to be sequenced. Pyrophosphate ions are captured by the substrate-attached chelators and optically detected to determine the identity of the next complementary nucleic acid in the DNA molecule to be sequenced. | 12-30-2010 |
20110065588 | SENSOR ARRAYS AND NUCLEIC ACID SEQUENCING APPLICATIONS - Embodiments of the present invention provide devices methods for sequencing DNA using arrays of reaction regions containing electronic sensors to monitor changes in solutions contained in the reaction regions. Test and fill reaction schemes are disclosed that allow DNA to be sequenced. By sequencing DNA using parallel reactions contained in large arrays, DNA can be rapidly sequenced. | 03-17-2011 |
20110159481 | Solid-phase chelators and electronic biosensors - Methods for sequencing nucleic acids are presented. Sequencing is accomplished through the chemical amplification of the products of DNA synthesis and the detection of the chemically amplified products. In embodiments of the invention, a substrate is provided having a plurality of molecules of DNA to be sequenced attached and a plurality of molecules capable of chelating pyrophosphate ions attached, the DNA molecules to be sequenced are primed, and a next complementary nucleotide is incorporated and excised a plurality of times leading to the buildup of pyrophosphate ions locally around the DNA molecule to be sequenced. Pyrophosphate ions are captured by the substrate-attached chelators and electronically detected to determine the identity of the next complementary nucleic acid in the DNA molecule to be sequenced. Additionally, devices and methods are provided for detecting biomolecules through the detection of pyrophosphate ions. | 06-30-2011 |
20110319276 | NUCLEOTIDES AND OLIGONUCLEOTIDES FOR NUCLEIC ACID SEQUENCING - Embodiments of the invention provide non-natural bifunctional nucleotides having both nuclease resistance and nucleic acid synthesis blocking properties and methods of sequencing nucleic acids that employ non-natural bifunctional nucleic acids. Additional embodiments provide non-natural oligonucleotides and methods for sequencing nucleic acids using the non-natural oligonucleotides. Methods according to embodiments of the invention employ electronic detection and fluorescent detection of nucleic acid sequencing reactions. | 12-29-2011 |
20120035084 | DEVICE AND METHOD FOR PARTICLE COMPLEX HANDLING - An embodiment of the invention relates to a device for detecting an analyte in a sample. The device comprises a fluidic network and an integrated circuitry component. The fluidic network comprises a sample zone, a cleaning zone and a detection zone. The fluidic network contains a magnetic particle and/or a signal particle. A sample containing an analyte is introduced, and the analyte interacts with the magnetic particle and/or the signal particle through affinity agents. A microcoil array or a mechanically movable permanent magnet is functionally coupled to the fluidic network, which are activatable to generate a magnetic field within a portion of the fluidic network, and move the magnetic particle from the sample zone to the detection zone. A detection element is present which detects optical or electrical signals from the signal particle, thus indicating the presence of the analyte. | 02-09-2012 |
20120046176 | NUCLEIC ACID SEQUENCING - Nucleic acid sequencing using concatemers of DNA is provided. Optionally, amplified reaction products from the repeated incorporation and excision of a nucleoside complementary to a nucleoside of the DNA to be sequenced onto primer molecules hybridized to the concatemers of DNA are detected. Nucleic acid sequencing using concatemers of DNA and non-natural oligonucleotides is also provided. Nucleic acid sequencing reactions are detected electronically and or optically using arrays of detectors. | 02-23-2012 |
20120208716 | DEVICE AND METHOD FOR PARTICLE COMPLEX HANDLING - An embodiment of the invention relates to a device for detecting an analyte in a sample. The device comprises a fluidic network and an integrated circuitry component. The fluidic network comprises a sample zone, a cleaning zone and a detection zone. The fluidic network contains a magnetic particle and/or a signal particle. A sample containing an analyte is introduced, and the analyte interacts with the magnetic particle and/or the signal particle through affinity agents. A microcoil array or a mechanically movable permanent magnet is functionally coupled to the fluidic network, which are activatable to generate a magnetic field within a portion of the fluidic network, and move the magnetic particle from the sample zone to the detection zone. A detection element is present which detects optical or electrical signals from the signal particle, thus indicating the presence of the analyte. | 08-16-2012 |
20120322683 | ENZYMATIC SIGNAL GENERATION AND DETECTION OF BINDING COMPLEXES IN STATIONARY FLUIDIC CHIP - An embodiment of the invention relates to a device for detecting an analyte in a sample. The device comprises a fluidic network and an integrated circuitry component. The fluidic network comprises a sample zone, a cleaning zone and a detection zone. The fluidic network contains a magnetic particle and/or a signal particle. A sample containing an analyte is introduced, and the analyte interacts with the magnetic particle and/or the signal particle through affinity agents. A microcoil array or a mechanically movable permanent magnet is functionally coupled to the fluidic network, which are activatable to generate a magnetic field within a portion of the fluidic network, and move the magnetic particle from the sample zone to the detection zone. A detection element is present which detects optical or electrical signals from the signal particle, thus indicating the presence of the analyte. | 12-20-2012 |
20140001055 | HIGH THROUGHPUT BIOCHEMICAL DETECTION USING SINGLE MOLECULE FINGERPRINTING ARRAYS | 01-02-2014 |
20140141526 | METHOD AND DEVICE FOR BIOMOLECULE PREPARATION AND DETECTION USING MAGNETIC ARRAY - An embodiment of the invention relates to a device for detecting an analyte in a sample. The device comprises a fluidic network and an integrated circuitry component. The fluidic network comprises multiple zones such as a sample zone, a cleaning zone and a detection zone. The fluidic network contains a magnetic particle and/or a signal particle. A sample containing an analyte is introduced, and the analyte interacts with the magnetic particle and/or the signal particle through affinity agents. A microcoil array or a mechanically movable permanent magnet is functionally coupled to the fluidic network, which are activatable to generate a magnetic field within a portion of the fluidic network, and move the magnetic particle from the sample zone to the detection zone. A detection element is present which detects optical or electrical signals from the signal particle, thus indicating the presence of the analyte. | 05-22-2014 |
20140274730 | NUCLEIC ACID SEQUENCING AND ELECTRONIC DETECTION - Embodiments of the present invention provide devices methods for sequencing DNA using arrays of reaction regions containing sensors to monitor changes in solutions or bound molecules contained in the reaction regions. Additional embodiments provide devices and methods for sequencing DNA using arrays of reaction regions that allow for optical monitoring of solutions in the reaction regions. Chemical amplification schemes that allow DNA to be sequenced in which multiple nucleotide addition reactions are performed to detect the incorporation of a base are disclosed. By sequencing DNA using parallel reactions contained in large arrays, DNA can be rapidly sequenced. | 09-18-2014 |
20140342470 | DEVICE AND METHOD FOR PARTICLE COMPLEX HANDLING - An embodiment of the invention relates to a device for detecting an analyte in a sample. The device comprises a fluidic network and an integrated circuitry component. The fluidic network comprises a sample zone, a cleaning zone and a detection zone. The fluidic network contains a magnetic particle and/or a signal particle. A sample containing an analyte is introduced, and the analyte interacts with the magnetic particle and/or the signal particle through affinity agents. A microcoil array or a mechanically movable permanent magnet is functionally coupled to the fluidic network, which are activatable to generate a magnetic field within a portion of the fluidic network, and move the magnetic particle from the sample zone to the detection zone. A detection element is present which detects optical or electrical signals from the signal particle, thus indicating the presence of the analyte. | 11-20-2014 |
Patent application number | Description | Published |
20080268635 | PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS - Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process. | 10-30-2008 |
20090053893 | ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS - Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane. | 02-26-2009 |
20090081866 | VAPOR DEPOSITION OF TUNGSTEN MATERIALS - Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer. | 03-26-2009 |
20100167527 | METHOD OF DEPOSITING TUNGSTEN FILM WITH REDUCED RESISTIVITY AND IMPROVED SURFACE MORPHOLOGY - A method of controlling the resistivity and morphology of a tungsten film is provided, comprising depositing a first film of a bulk tungsten layer on a substrate during a first deposition stage by (i) introducing a continuous flow of a reducing gas and a pulsed flow of a tungsten-containing compound to a process chamber to deposit tungsten on a surface of the substrate, (ii) flowing the reducing gas without flowing the tungsten-containing compound into the chamber to purge the chamber, and repeating steps (i) through (ii) until the first film fills vias in the substrate surface, increasing the pressure in the process chamber, and during a second deposition stage after the first deposition stage, depositing a second film of the bulk tungsten layer by providing a flow of reducing gas and tungsten-containing compound to the process chamber until a second desired thickness is deposited. | 07-01-2010 |
20110244682 | ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS - Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm. | 10-06-2011 |
20120003388 | METHODS AND APPARATUS FOR THERMAL BASED SUBSTRATE PROCESSING WITH VARIABLE TEMPERATURE CAPABILITY - A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap. | 01-05-2012 |
20120003833 | METHODS FOR FORMING TUNGSTEN-CONTAINING LAYERS - Methods for forming tungsten-containing layers on substrates are provided herein. In some embodiments, a method for forming a tungsten-containing layer on a substrate disposed in a process chamber may include mixing hydrogen and a hydride to form a first process gas; introducing the first process gas to the process chamber; exposing the substrate in the process chamber to the first process gas for a first period of time to form a conditioned substrate surface; subsequently purging the process chamber of the first process gas; exposing the substrate to a second process gas comprising a tungsten precursor for a second period of time to form a tungsten-containing nucleation layer atop the conditioned substrate surface; and subsequently purging the process chamber of the second process gas. | 01-05-2012 |
20120231626 | FORMATION OF LINER AND BARRIER FOR TUNGSTEN AS GATE ELECTRODE AND AS CONTACT PLUG TO REDUCE RESISTANCE AND ENHANCE DEVICE PERFORMANCE - The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting with the silicon containing layer to form a tungsten silicide layer on the substrate, depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer. | 09-13-2012 |
20120244699 | ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS - Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm. | 09-27-2012 |
20130109172 | HIGH TEMPERATURE TUNGSTEN METALLIZATION PROCESS | 05-02-2013 |
20130247826 | APPARATUS FOR VARIABLE SUBSTRATE TEMPERATURE CONTROL - In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater. | 09-26-2013 |
20140106083 | TUNGSTEN GROWTH MODULATION BY CONTROLLING SURFACE COMPOSITION - A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer. | 04-17-2014 |
20140187038 | HIGH TEMPERATURE TUNGSTEN METALLIZATION PROCESS - Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer. | 07-03-2014 |
20140326276 | COBALT REMOVAL FOR CHAMBER CLEAN OR PRE-CLEAN PROCESS - Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber. | 11-06-2014 |
20150050807 | TUNGSTEN DEPOSITION WITH TUNGSTEN HEXAFLUORIDE (WF6) ETCHBACK - Implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method comprises positioning a substrate having a feature formed therein in a substrate processing chamber, depositing a first film of a bulk tungsten layer by introducing a continuous flow of a hydrogen containing gas and a tungsten halide compound to the processing chamber to deposit the first tungsten film over the feature, etching the first film of the bulk tungsten layer using a plasma treatment to remove a portion of the first film by exposing the first film to a continuous flow of the tungsten halide compound and an activated treatment gas and depositing a second film of the bulk tungsten layer by introducing a continuous flow of the hydrogen containing gas and the tungsten halide compound to the processing chamber to deposit the second tungsten film over the first tungsten film. | 02-19-2015 |
20150076110 | BORON IONIZATION FOR ALUMINUM OXIDE ETCH ENHANCEMENT - Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally. | 03-19-2015 |
20150294906 | METHODS FOR FORMING METAL ORGANIC TUNGSTEN FOR MIDDLE OF THE LINE (MOL) APPLICATIONS - Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface. | 10-15-2015 |
Patent application number | Description | Published |
20140038001 | POWER BATTERY SAFETY COVER - The invention pertains to the technical field of a power battery, in particular to a power battery safety cover, comprising a cover plate, and a first terminal, a second terminal, a pressure release valve, a filling hole and a safety turning valve which are arranged on the cover plate, wherein the safety turning valve is electrically connected to the cover plate, on the cover plate is provided with a conducting plate for short-circuit protection which is electrically connected to the second terminal; the conducting plate for short-circuit protection, positioned above the safety turning valve, comprises a conducting plate main body and a first groove arranged on the conducting plate main body, and thickness of bottom of the first groove is less than that of the safety turning valve. | 02-06-2014 |
20140113183 | LITHIUM-ION BATTERY WITH SAFETY PROTECTION BRACKET - A lithium-ion battery includes a safety protection bracket. The battery includes an electrode assembly and an aluminum housing for receiving the electrode assembly, wherein the electrode assembly comprises a cathode, an anode, and a separator film, a cathode tab is positioned on the cathode, an anode tab is positioned on the anode, a safety bracket is positioned on the top of the electrode assembly, and the safety bracket is located between the aluminum housing and the electrode assembly, and an aluminum top cover fixedly connected to the aluminum housing is positioned on the aluminum housing. The battery provides a safety protection unit deployed on the bracket can fix the electrode assembly, and in addition, when the battery is punctured or crushed or otherwise misused, release energy of a faulty cell through an outer short-circuit to avoid greater accidents and ensure safety performance of the battery. | 04-24-2014 |
20140154540 | POWER BATTERY COVER PLATE EQUIPPED WITH A CURRENT INTERRUPTION DEVICE - The invention pertains to the field of battery technology, in particular to a power battery cover plate equipped with a current interruption device, comprising a cover plate, a positive Terminal, a vent and a negative teminal, wherein, the positive Terminal, the vent and the negative teminal are installed on the cover plate; the negative teminal comprises an upper part of the negative teminal and a lower part of the negative teminal, in which, the lower part of the negative teminal is assembled with the upper part of the negative teminal in an insulated and sealed way, the upper part of the negative teminal is connected with the lower part of the negative teminal via an elastic connector, the lower part of the negative teminal is provided with a notch to which the elastic connector is corresponding to. | 06-05-2014 |
20140170445 | POWER BATTERY COVER - A power battery cover, which comprises a cover plate, a burst vent, a first terminal, a second terminal and a conducting strip; wherein, the burst vent, the first terminal and the second terminal are arranged on the cover plate, the second terminal is electrically connected to the cover plate, and the first terminal is subject to an insulated assembly with the cover plate and is electrically connected to the conducting strip; the power battery cover also comprises a tensile shrapnel which is welded to the cover plate; the tensile shrapnel is arranged under and close to the conducting strip; under the condition of overcharge of a battery, air pressure in the battery cell rises due to decomposition of the electrolyte. | 06-19-2014 |