Patent application number | Description | Published |
20090090934 | Field Effect Transistor and Method for Manufacturing the Same - A method for manufacturing a field effect transistor, includes: forming a mask of an insulating film on a semiconductor layer containing Si formed on a semiconductor substrate; forming the semiconductor layer into a mesa structure by performing etching with the use of the mask, the mesa structure extending in a direction parallel to an upper face of the semiconductor substrate; narrowing a distance between two sidewalls of the mesa structure and flattening the sidewalls by performing a heat treatment in a hydrogen atmosphere, the two sidewalls extending in the direction and facing each other; forming a gate insulating film covering the mesa structure having the sidewalls flattened; forming a gate electrode covering the gate insulating film; and forming source and drain regions at portions of the mesa structure, the portions being located on two sides of the gate electrode. | 04-09-2009 |
20100136752 | Semiconductor device and method for manufacturing the same - A semiconductor device includes a Si substrate, an insulating film formed on one part of the Si substrate, a bulk Si region grown on other part of the Si substrate other than the insulating film, Si1-xGex (006-03-2010 | |
20100219480 | Field effect transistor, integrated circuit element, and method for manufacturing the same - A field effect transistor of an embodiment of the present invention includes, a semiconductor substrate containing Si atoms; a protruding structure formed on the semiconductor substrate; a channel region formed in the protruding structure and containing Ge atoms; an under channel region formed under the channel region in the protruding structure and containing Si and Ge atoms, the Ge composition ratio among Si and Ge atoms contained in the under channel region continuously changing from the channel region side to the semiconductor substrate side; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film on the channel region. | 09-02-2010 |
20110163355 | Field effect transistor and method for manufacturing the same - A method for manufacturing a field effect transistor, includes: forming a mask of an insulating film on a semiconductor layer containing Si formed on a semiconductor substrate; forming the semiconductor layer into a mesa structure by performing etching with the use of the mask, the mesa structure extending in a direction parallel to an upper face of the semiconductor substrate; narrowing a distance between two sidewalls of the mesa structure and flattening the sidewalls by performing a heat treatment in a hydrogen atmosphere, the two sidewalls extending in the direction and facing each other; forming a gate insulating film covering the mesa structure having the sidewalls flattened; forming a gate electrode covering the gate insulating film; and forming source and drain regions at portions of the mesa structure, the portions being located on two sides of the gate electrode. | 07-07-2011 |
20110165738 | Field effect transistor and method for manufacturing the same - A method for manufacturing a field effect transistor, includes: forming a mask of an insulating film on a semiconductor layer containing Si formed on a semiconductor substrate; forming the semiconductor layer into a mesa structure by performing etching with the use of the mask, the mesa structure extending in a direction parallel to an upper face of the semiconductor substrate; narrowing a distance between two sidewalls of the mesa structure and flattening the sidewalls by performing a heat treatment in a hydrogen atmosphere, the two sidewalls extending in the direction and facing each other; forming a gate insulating film covering the mesa structure having the sidewalls flattened; forming a gate electrode covering the gate insulating film; and forming source and drain regions at portions of the mesa structure, the portions being located on two sides of the gate electrode. | 07-07-2011 |
20110180847 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - According to one embodiment, a semiconductor device having a Ge- or SiGe-fin structure includes a convex-shaped active area formed along one direction on the surface region of a Si substrate, a buffer layer of Si | 07-28-2011 |
20110210375 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device including a tunnel FET, includes a gate electrode, which is formed on a first semiconductor layer formed of Si | 09-01-2011 |
20120175705 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a MOS semiconductor device. In the method, a gate electrode is formed on a gate insulating film provided on a channel region which is a part of an Si layer and which is interposed between a source/drain region, and a film mainly includes of Ge is made to grow on the source/drain region. Then, and the film mainly includes of Ge is made to react with a metal, forming an intermetallic compound film having a depthwise junction position identical to a growth interface of the film mainly includes of Ge. | 07-12-2012 |
20120276712 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - According to one embodiment, a semiconductor device having a Ge— or SiGe-fin structure includes a convex-shaped active area formed along one direction on the surface region of a Si substrate, a buffer layer of Si | 11-01-2012 |
20130005106 | FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT ELEMENT, AND METHOD FOR MANUFACTURING THE SAME - A field effect transistor of an embodiment of the present invention includes, a semiconductor substrate containing Si atoms; a protruding structure formed on the semiconductor substrate; a channel region formed in the protruding structure and containing Ge atoms; an under channel region formed under the channel region in the protruding structure and containing Si and Ge atoms, the Ge composition ratio among Si and Ge atoms contained in the under channel region continuously changing from the channel region side to the semiconductor substrate side; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film on the channel region. | 01-03-2013 |
20130023092 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method of manufacturing a semiconductor device including forming a first SiGe layer on an insulating film, processing the first SiGe layer to have an island shape which includes a first region and a second region, the first region having a width larger than a width of the second region in a direction perpendicular to a connecting direction of the second region, subjecting the first SiGe layer having the island shape to thermal oxidation, thereby increasing Ge composition of the first and second region, and setting the Ge composition of the second region to be higher than the Ge composition of the first region, melting the second region having the increased Ge composition by heat treatment, and recrystallizing the melted second region from an interface between the first and second region. | 01-24-2013 |
Patent application number | Description | Published |
20090086063 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS USING THE SAME - Providing a solid-state imaging device having a degree of freedom capable of changing which of the pixels functions as a pixel having a photoelectric converter portion bisected in which direction. When a gate electrode | 04-02-2009 |
20100134671 | SOLID STATE IMAGING DEVICE - In a solid state imaging device according to the present application, a sampling hold part samples and holds, in accordance with sampling control signals φTVN, φTVS, a dark signal and a light signal of each of vertical signal lines provided to correspond to each column of pixels, and supplies the signals being held to horizontal signal lines in accordance with a horizontal scanning signal. During predetermined intervals T | 06-03-2010 |
20130153750 | IMAGING DEVICE - A horizontal driving control unit of an imaging device supplies dummy pulse signals to a horizontal driving unit at least at a part of period during a period from a start time point of each horizontal blanking period to a last signal sampling time point defined by a sampling control signal. | 06-20-2013 |
20150116558 | SOLID-STATE IMAGE-CAPTURING DEVICE AND ELECTRONIC CAMERA USING THE SAME - A solid-state image-capturing device includes: plurality of pixels arranged in two-dimensional manner; plurality of vertical signal lines for corresponding column of the plurality of pixels, to receive a signal of the pixels of corresponding column; plurality of signal processing units process a signal of the plurality of vertical signal lines based on a ramp signal and reference voltage; first line configured as a common line connects first input units of the plurality of signal processing units to receive the ramp signal; the ramp signal is supplied to one side of the first line along a row direction; second line configured as common line connects second input units of plurality of signal processing units to receive reference voltage, the reference voltage is supplied to one side of the second line along the row direction and reference voltage is not supplied to another side of the second line along the row direction. | 04-30-2015 |