Patent application number | Description | Published |
20100091384 | MINIATURE IMAGE CAPTURE LENS - A miniature image capture lens is disclosed comprising an aperture diaphragm having an aperture through which an image is captured and a wafer-level lens system, including a first surface disposed on a first substrate, a second substrate with a first side bonded to the first substrate, a second surface disposed on a second side of the second substrate, and a third surface disposed on a third substrate, wherein the first surface, the second surface and the third surface are aspherical and the following conditions are satisfied: | 04-15-2010 |
20100091386 | MINIATURE IMAGE CAPTURE LENS - A miniature image capture lens is disclosed, comprising an aperture diaphragm having an aperture through which an image is captured and a wafer-level lens system, comprising a first lens group including a first substrate, a first lens disposed on a first side of the first substrate and a second lens disposed on a second side of the first substrate, and a second lens group including a second substrate, a third lens disposed on a first side of the second substrate and a fourth lens disposed on a second side of the second substrate. The first lens, the second lens, the third lens and the fourth lens are aspherical and the miniature image capture lens meets the following condition: | 04-15-2010 |
20100118420 | IMAGE CAPTURE LENS - An image capture lens is disclosed. The image capture lens includes a glass substrate having a first side and an opposing second side, a first lens material with a first refractive index, and a second lens material with a second refractive index higher than the first refractive index. The first lens material is formed on the first side of the first glass substrate and has a curved top surface. The second lens material covers the first lens material and the first glass substrate and has a curved top surface. | 05-13-2010 |
20100123817 | OPTICAL ELEMENT AND MANUFACTURE METHOD THEREOF - An optical element and image capture lens structure. The optical element includes a substrate and an optical component with at least one effective area and non-effective area, formed on the substrate, wherein the non-effective area has a rough surface. The image capture lens structure includes a substrate, an optical component formed on the substrate, and a spacer with a micro structure, attached to the substrate by an adhesive, wherein the micro structure is located between the adhesive and the optical component to prevent the overflow of the adhesive. | 05-20-2010 |
Patent application number | Description | Published |
20100133495 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides. | 06-03-2010 |
20100213432 | PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF - A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer. | 08-26-2010 |
20110312150 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides. | 12-22-2011 |
20120068147 | PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF - A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer. | 03-22-2012 |