Patent application number | Description | Published |
20080250383 | Method for designing mask pattern and method for manufacturing semiconductor device - A mask pattern designing method capable of achieving the reduction in the increasing OPC processing time, shortening the manufacture TAT of a semiconductor device, and achieving the cost reduction is provided. An OPC (optical proximity correction) process at the time when a cell is singularly arranged is performed to a cell library pattern which forms a basic structure of a semiconductor circuit pattern in advance, and a semiconductor chip is produced using the cell library pattern to which the OPC process has been performed. At this time, since the cell library pattern which has been OPC-processed in advance is influenced by the cell library patterns around it, the correction process thereof is performed to the end portions of the patterns near the cell boundary. As particularly effective OPC correction means, the genetic algorithm is used. | 10-09-2008 |
20090091752 | APPARATUS AND A METHOD FOR INSPECTION OF A MASK BLANK, A METHOD FOR MANUFACTURING A REFLECTIVE EXPOSURE MASK, A METHOD FOR REFLECTIVE EXPOSURE, AND A METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUITS - The mask blank inspection apparatus is constituted of a stage for mounting a reflective mask blank thereon, a light source for generating inspection light, a mirror serving as an illuminating optics, an imaging optical system, a beam splitter, two two-dimensional array sensors, signal storage units, an image processing unit, a main control unit for controlling operation of the whole apparatus, the first sensor being located at a position which is displaced by a predetermined distance from the focal plane of a first light beam, the second sensor being located at a position which is displaced by a predetermined distance from the focal plane of a second light beam along a opposite direction, whereby accurately and conveniently inspecting presence/absence and types of defects in reflective mask blank. | 04-09-2009 |
20090297988 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A manufacturing technique of a semiconductor integrated circuit device utilizing a defect correction technique of a reflection-type mask using extreme ultraviolet (EUV) light with a wavelength of about 13.5 nm as an exposure light source is provided. An auxiliary pattern having an opening diameter finer than that of an opening pattern in which a phase defect is generated is formed in an absorption layer in the vicinity of the opening pattern. The auxiliary pattern is a pattern for adjusting the exposure light amount at the time when the opening pattern is transferred to a photoresist film on a wafer. | 12-03-2009 |
20100208978 | METHOD OF INSPECTING MASK PATTERN AND MASK PATTERN INSPECTION APPARATUS - A inspection image data of the chip A is captured and the data representing the amount of correction of flare corresponded to the chip A is appropriately loaded from the map storage block. Next, a inspection image of the chip A′ is captured, and the data representing the amount of correction of flare corresponded to the chip A′ is loaded from the flare map storage block as the amount of shifting of the edge of the contour of the pattern. The amount of correction is converted, by a correction data generation block which is a correction data generator, into the amount of geometrical correction of pattern which provides correction data. In the comparison block, the images of the geometry of two chips are compared and corrected on the amount of correction of flare generated by a correction data generation block, to thereby judge whether defect is found or not. | 08-19-2010 |
20110043811 | MASK DEFECT MEASUREMENT METHOD, MASK QUALITY DETERMINATION METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method for measuring a shape of a phase defect existing on an exposure mask includes making inspection light incident on the mask, measuring the intensity of light scattered in an angular range in which the width of an scattering area on the phase defect can be predicted, calculating a radius of the phase defect based on the measured scattered light intensity, changing the angular range of scattered light to be measured, remeasuring scattered light intensity in the thus changed angular range, and calculating a scattering cross-sectional area based on the scattered light intensity obtained by remeasurement. A process of remeasuring the scattered light intensity and calculating the scattering cross-sectional area is repeatedly performed until the remeasured scattered light intensity is saturated and the shape of the phase defect is determined by using the calculated radius of the phase defect and each of the calculated scattering cross-sectional areas. | 02-24-2011 |
20140347317 | TOUCH DETECTION DEVICE, DISPLAY DEVICE WITH TOUCH DETECTION FUNCTION, AND ELECTRONIC APPARATUS - According to an aspect, a display device with a touch detection function, during a touch detection operation, derives a signal value based on the touch detection signal at coordinates at which the pointer is in contact with or in proximity to the device and in the vicinity of the coordinates; derives a three-dimensional waveform which employs a magnitude of the signal value as a height direction; derives a straight line in the three-dimensional waveform, the straight line connecting between a barycenter based on a volume of a three-dimensional waveform portion equal to or greater than a first threshold value in the height direction and a barycenter based on a volume of a three-dimensional waveform portion equal to or greater than a second threshold value in the height direction; and detects based on the straight line whether the pointer is in contact with or in proximity to the device. | 11-27-2014 |
Patent application number | Description | Published |
20100133476 | POLYMERIC ADSORPTION FILMS AND PROCESSES FOR PRODUCING THESE - The present invention provides a polymeric adsorption film comprising a polymer containing two or more charge-transport blocks and a substrate, wherein any of the charge-transport blocks is preferentially adhered to a surface of the substrate; a polymeric adsorption film comprising a polymer containing two or more charge-transport blocks and a substrate, wherein any of the charge-transport blocks different from the charge-transport block preferentially adhered to a surface of the substrate is preferentially exposed; or a polymeric adsorption film comprising a polymer and a substrate, wherein the polymer contains two or more charge-transport blocks and any charge-transport block selected from the charge-transport blocks is adhered to a surface of the substrate more preferentially than the other charge-transport blocks. | 06-03-2010 |
20100178584 | ELECTRODE CATALYST COMPOSITION, METHOD FOR PRODUCTION THEREOF, ELECTRODE, AND FUEL CELL AND MEMBRANE-ELECTRODE ASSEMBLY EACH COMPRISING THE ELECTRODE - It is an object of the present invention to provide an electrode catalyst composition capable of forming an electrode to enhance the power generation efficiency in a fuel cell, in particular a single-chamber solid electrolyte fuel cell. The electrode catalyst composition of the present invention comprises gold and platinum, wherein the number of gold atoms is exceeding 0 and not more than 3 when the number of platinum atoms is 100. | 07-15-2010 |
20100216049 | ELECTRODE CATALYST COMPOSITION, ELECTRODE, AND FUEL CELL AND MEMBRANE-ELECTRODE ASSEMBLY EACH COMPRISING THE ELECTRODE - Provided are an electrode to enhance the power generation efficiency in a fuel cell, in particular a single-chamber solid electrolyte fuel cell, and such an electrode. The electrode of the present invention comprises ΔEh, represented by the following formula ( | 08-26-2010 |
20110001905 | TRANSPARENT THIN-FILM ELECTRODE - Provided is a transparent thin-film electrode characterized in that light transmitted through the transparent thin-film electrode is polarized. The transparent thin-film electrode comprises a conductive polymer or the transparent thin-film electrode comprises a carbon nanotube. Consequently, the transparent thin-film electrode and a liquid crystal display device or a light-emitting element using the same which has industrially satisfactory performance can be provided without using indium that has a problem in terms of stable supply and cost because the amount of indium as a resource is small and the price thereof rises sharply due to stringent demand. | 01-06-2011 |
Patent application number | Description | Published |
20080276215 | Mask Pattern Designing Method Using Optical Proximity Correction in Optical Lithography, Designing Device, and Semiconductor Device Manufacturing Method Using the Same - A method for designing a mask pattern realizes shortening the ever-growing time for the OPC treatment, decreases the fabrication TAT of a semiconductor device and cuts cost. A method for fabricating a semiconductor device uses the mask pattern designed. This invention performs the OPC treatment in advance on a cell library constituting the basic configuration of a semiconductor circuit pattern and prepares a semiconductor chip using the cell library that has undergone the OPC treatment. The method for designing a mask pattern includes the steps of designing a cell library pattern by executing for each of the cell libraries a treatment for correcting proximity effect directed to correcting the change of shape taking place during the formation of a pattern by the exposure of a mask pattern, designing a mask pattern by laying out the cell libraries and changing the amount of correction of proximity effect applied to the cell libraries in consideration of the influence of the cell library patterns disposed peripherally. This treatment for correction is executed by the degree of influence exerted by surrounding patterns collected in advance and the genetic algorithm. | 11-06-2008 |
20090297912 | METAL PHOSPHATE - Provided is a metal phosphate showing high proton conductivity, which is useful for a fuel cell having higher output and produced at lower cost. The proton-conductive metal phosphate is a compound containing M, P and O,
| 12-03-2009 |
20100009235 | METAL PHOSPHATE AND METHOD FOR PRODUCING THE SAME - A metal phosphate having high proton conductivity which is useful for a fuel cell having higher output, and a method for producing such a metal phosphate are provided. The method for producing a metal phosphate is a metal phosphate production method using a compound containing M, a compound containing J | 01-14-2010 |
20100323275 | ION CONDUCTIVE COMPOSITION, ION CONDUCTIVE FILM CONTAINING THE SAME, ELECTRODE CATALYST MATERIAL, AND FUEL CELL - An object of the present invention is to provide an ion-conductive composition that has proton conductivity over a wide temperature range, including the intermediate and high temperature range of 100° C. and higher, and an ion-conductive composite material such as ion-conductive membrane prepared from the composition. The composite ion-conductive material comprises the ion-conductive composition of the present invention, and the ion-conductive composition includes an ion-conductive polymer and ion-conductive inorganic solid material. | 12-23-2010 |
20120040107 | GAS-BARRIER MULTILAYER FILM - A gas-barrier multilayer film including:
| 02-16-2012 |
Patent application number | Description | Published |
20100285409 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A reverse pattern is formed once by combining a negative exposure mask having a wiring pattern with a positive resist, and then a positive wiring pattern is formed by use of the reverse pattern. That is, a positive resist applied on a semiconductor substrate is exposed by use of the exposure mask having an opening part in a region corresponding to the wiring pattern, and then the exposed part is removed by development to form a resist pattern, thereby forming the wiring pattern in the region corresponding to the opening part of the resist pattern. Consequently, it is hardly affected by flare during EUV exposure, thereby fabricating a fine wiring pattern with higher exposure latitude. | 11-11-2010 |
20120154416 | Display device, control method of display device and electronic apparatus - A display device includes: a display unit in which pixels including memories are arranged; a memory unit holding data; and a control unit rewriting the contents held by memories concerning pixels belonging to a partial area of the display unit based on data held by the memory unit in accordance with instructions given from the outside. | 06-21-2012 |
20130063499 | DISPLAY DEVICE, DRIVING METHOD OF DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A display device having a memory function within pixels, includes: a drive unit that divides image generation for one frame into plural sub-frames and performs display drive by time-division drive in units of sub-frames, wherein the drive unit performs drive of bringing centers of pixels of gray scale representation into coincidence with centers of display images among the plural sub-frames. | 03-14-2013 |
20130065163 | METHOD OF MANUFACTURING EUV MASK - Techniques for easily fabricating defect-free EUV masks with good yield are provided. A method of manufacturing an EUV mask according to the present invention includes the steps of: carrying out a defect inspection after depositing a multilayer film on a substrate; if a defect is found in the defect inspection, determining whether the defect is a recessed defect, a protruded defect, or defects in which the recessed defect and the protruded defect are mixed, and if the defects are the mixed defects of the recessed defect and the protruded defect, determining the relation in size between the defects; and depositing an additional multilayer film on the multilayer film while changing a film forming method in accordance with the results of the determination. | 03-14-2013 |
20130229444 | DISPLAY DEVICE, METHOD OF DRIVING DISPLAY DEVICE, AND ELECTRONIC APPLIANCE - A display device in which pixels having a memory function are arranged includes a driving unit that performs display driving in a driving method that obtains a middle gradation by temporally changing gradation of each of the pixels in one period in which a plurality of frames are assumed, wherein the driving unit is configured to discontinuously write lower bits and higher bits of gradation data with respect to the pixels in a scanning direction in a unit of one line or a plurality of lines. | 09-05-2013 |
20130249853 | DETECTION DEVICE, DETECTION METHOD, PROGRAM AND DISPLAY APPARATUS - A detection device that detects the approach of a conductor includes: a sensor section including transmission and reception electrodes, and detecting the approach of the conductor to an intersection point where the transmission and reception electrodes intersect with each other; a voltage generating section generating an alternating voltage in which a rise and a fall of a voltage value according to first and second slopes are alternately repeated; a current generating section applying the alternating voltage to the transmission electrode to generate, in the reception electrode, an alternating current having a uniform current value according to the first or second slope while the voltage value of the alternating voltage is rising or falling; a signal generating section generating a detection signal vibrating with an amplitude according to a distance between the intersection point and the conductor; and a detecting section detecting the approach of the conductor to the intersection point. | 09-26-2013 |
20130323928 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND MASK - An improvement is achieved in the performance of a semiconductor device. A method of manufacturing the semiconductor device includes an exposure step of subjecting a resist film formed over a substrate to pattern exposure using EUV light reflected by the top surface of an EUV mask which is a reflection-type mask. In the exposure step, the EUV mask is held with the cleaned back surface thereof being in contact with a mask stage. In the EUV mask, the water repellency of the side surface thereof is higher than the water repellency of the top surface thereof. After the exposure step, the resist film subjected to the pattern exposure is developed to form a resist pattern. | 12-05-2013 |
20140206111 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - To improve the performance of a semiconductor device, a semiconductor device manufacturing method includes an exposing process of performing pattern exposure of a resist film formed on a substrate by using EUV light reflected from a front surface of an EUV mask as a reflective mask. In this exposing process, the resist film is subjected to pattern exposure by repeating a process of irradiating the resist film with the EUV light by changing a focal position of the EUV light with which the resist film is irradiated, along a film thickness direction of the resist film. After this exposing process, the resist film subjected to pattern exposure is developed to form a resist pattern. | 07-24-2014 |
Patent application number | Description | Published |
20090031704 | OTHER-TYPE FUEL CONTAMINATION DETERMINATION APPARATUS FOR INTERNAL COMBUSTION ENGINE - A other-type fuel contamination determination apparatus for an internal combustion engine includes an exhaust gas sensor. The exhaust gas sensor is configured for obtaining one of (a) an air-fuel ratio and (b) a combustion state for the internal combustion engine based on exhaust gas. The other-type fuel contamination determination apparatus determines whether other-type fuel contaminates fuel that is supplied to the internal combustion engine based on an output by the exhaust gas sensor. | 02-05-2009 |
20090031987 | IMPROPER FUEL MIXING DETERMINING APPARATUS FOR INTERNAL COMBUSTION ENGINE - If improper fuel (light oil or kerosene) is mixed into fuel (gasoline) supplied to the engine, a knock limit of an ignition timing is retarded. Based on such a characteristic, every when knocking is detected based on a detection signal from a knock sensor, the ignition timing is stored as the knock occurring ignition timing and the ignition timing is retarded by a predetermined amount. After repeating the above processes, it is determined whether the knock occurring ignition timing is retarded more than a determination value (for example, a retarded limit value of the knock occurring ignition timing in a case that proper gasoline is served). When the knock occurring ignition timing is retarded more than the determination value, it is determined that the improper fuel is mixed in the fuel. | 02-05-2009 |
20090055079 | ABNORMALITY DIAGNOSIS APPARATUS FOR INTERNAL COMBUSTION ENGINE - An abnormality diagnosis apparatus for an internal combustion engine includes an abnormality diagnosis unit, an other fuel contamination determination unit, and a misdiagnosis prohibition unit. The abnormality diagnosis unit determines whether there is an abnormality in a fuel system based on an output from an exhaust gas sensor mounted on an exhaust duct of the internal combustion engine. The other fuel contamination determination unit determines whether an other fuel contaminates a supply fuel supplied to the internal combustion engine. The misdiagnosis prohibition unit conducts one of (a) changing an abnormality determination condition for the abnormality diagnosis in the fuel system and (b) prohibiting the abnormality diagnosis in the fuel system, when the other fuel contamination determination unit determines that the other fuel contaminates the supply fuel. | 02-26-2009 |
20090198434 | ABNORMALITY DIAGNOSIS DEVICE OF INTERNAL COMBUSTION ENGINE - A cylinder causing an abnormal air-fuel ratio is specified. Injection ratio changing control for gradually changing a ratio between command injection quantities of two injectors of the abnormal cylinder while keeping the sum of the command injection quantities of the two injectors constant is performed on the abnormal cylinder. If the injection ratio changing control is performed under the same condition, a changing behavior of the actual sum injection quantity of the two injectors varies and a changing behavior of the air-fuel ratio varies depending on which one of the two injectors is abnormal. Therefore, the abnormal injector out of the two injectors is specified using a learning value of an air-fuel ratio feedback correction value based on an output of an exhaust gas sensor. | 08-06-2009 |
20110219861 | ABNORMALITY DIAGNOSTIC DEVICE OF INTERNAL COMBUSTION ENGINE WITH TURBOCHARGER - When a wastegate valve, which opens and closes an exhaust bypass passage bypassing an exhaust turbine, is open, exhaust gases of respective cylinders bypass the exhaust turbine and pass a sensing point of an air-fuel ratio sensor downstream of the exhaust turbine. Accordingly, the exhaust gases of the respective cylinders can be avoided from being mixed by the exhaust turbine, so an influence of an inter-cylinder variation in an air-fuel ratio due to an inter-cylinder imbalance abnormality becomes apt to appear in an output waveform of the air-fuel ratio sensor. Therefore, existence or nonexistence of the inter-cylinder imbalance abnormality is determined based on the output of the air-fuel ratio sensor when the wastegate valve is open. Eventually, the existence or nonexistence of the inter-cylinder imbalance abnormality can be determined accurately, thereby improving detection accuracy of the inter-cylinder imbalance abnormality. | 09-15-2011 |