Patent application number | Description | Published |
20120210873 | EXHAUST GAS PROCESSING APPARATUS AND METHOD FOR PROCESSING EXHAUST GAS - An exhaust gas processing apparatus for processing a mixed gas discharged from a semiconductor manufacturing apparatus is provided with: an adsorption separation unit for separating a monosilane gas that requires abatement and a hydrogen gas that does not require abatement by allowing the mixed gas to pass through and then by mainly adsorbing the monosilane gas among a plurality of types of gases contained in the mixed gas; a heating unit for desorbing the monosilane adsorbed onto the adsorption separation unit; a silane gas abatement unit for abating a monosilane gas desorbed from the adsorption separation unit; and a hydrogen gas discharge unit for discharging a hydrogen gas separated from the mixed gas by the adsorption separation unit. | 08-23-2012 |
20130008311 | EXHAUST GAS TREATMENT SYSTEM - An exhaust gas treatment system treats a mixed gas containing at least hydrogen and monosilane discharged from a semiconductor fabrication equipment. The exhaust gas treatment system includes a pump unit which emits the mixed gas discharged from the semiconductor fabrication equipment, a compressor which compresses the mixed gas emitted by the pump unit and sends the mixed gas to a rear stage, a gas accommodation unit which collects and accommodates the compressed mixed gas, a flow rate control unit which controls a flow rate of the mixed gas supplied from the gas accommodation unit, and a membrane separation unit which causes the hydrogen to selectively permeate therethrough and separates the monosilane and the hydrogen from the mixed gas. Accordingly, the exhaust gas treatment system may be stably operated in a state where a change in pressure of the mixed gas discharged from the semiconductor fabrication equipment is alleviated. | 01-10-2013 |
20130139690 | EXHAUST GAS TREATMENT SYSTEM - A mixed gas containing monosilane is released from a semiconductor fabrication equipment. A pump unit suctions the mixed gas discharged from the semiconductor fabrication equipment and sends it out to a silane gas treatment unit provided at a stage subsequent to the pump unit. Argon gas is used as a purge gas of the pump unit. The silane gas treatment unit processes the mixed gas, containing at least hydrogen and monosilane, discharged from the semiconductor fabrication equipment via the pump unit. And the silane gas treatment unit separates and recover monosilane from the mixed gas so as to be recycled. Argon recovered by a noble gas treatment unit is used as the purge gas of the pump unit. | 06-06-2013 |
20130174902 | PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element comprising: a photoelectric conversion layer; and a plurality of metal nanoparticles arranged in the form of a two-dimensional array on the photoelectric conversion layer on its principal face side that is opposite to its light receiving face, wherein the plurality of metal nanoparticles are arranged with a particle density that is equal to or greater than 5.0×10 | 07-11-2013 |
20140000716 | POLYMER AND PHOTOELECTRIC CONVERSION ELEMENT | 01-02-2014 |
20140114078 | ORGANIC SEMICONDUCTOR - An organic semiconductor represented by the following formula (1). | 04-24-2014 |
20140150868 | PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD THEREOF - A photoelectric conversion element comprising: a photoelectric conversion layer; an electron extraction electrode; a hole extraction electrode; and an electron transport layer, wherein the electron transport layer contains a substance represented by the following chemical formula and a reactant thereof: | 06-05-2014 |
20140238482 | PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD THEREOF - A photoelectric conversion element comprising: at least a photoelectric conversion layer; an electron extraction electrode provided on one major surface side of the photoelectric conversion layer; a hole extraction electrode provided on the other major surface side of the photoelectric conversion layer; and an electron extraction layer that is provided between the photoelectric conversion layer and the electron extraction electrode and includes at least an electron transport layer, wherein the photoelectric conversion element further comprises, between the photoelectric conversion layer and the electron transport layer, a conduction band bottom energy adjustment layer configured to reduce conduction band bottom energy of the electron extraction layer to energy lower than conduction band bottom energy of the electron transport layer. | 08-28-2014 |