Patent application number | Description | Published |
20080213656 | Battery, Charging Apparatus and Electronic Apparatus - In a battery ( | 09-04-2008 |
20100232101 | Battery, Charging Apparatus and Electronic Device - In a battery including a battery cell formed in a flattened substantially parallelepiped shape and a terminal contacting section electrically connected to the battery cell, at one end in the longitudinal direction of a face of the battery opposing to the face on which the terminal contacting section is provided, a projecting portion which projects in the longitudinal direction of the face is provided. Meanwhile, another projecting portion which projects in the longitudinal direction of the face is provided at the other end. The projecting portions may have projecting lengths different from each other or may have projecting lengths and projecting thicknesses different from each other. A charging apparatus into which the battery is to be installed includes an accommodating section for the battery which in turn includes projection accommodating portions configured to individually accommodate the projecting portions. | 09-16-2010 |
20110086263 | Battery, Charging Apparatus and Electronic Device - In a battery including a battery cell formed in a flattened substantially parallelepiped shape and a terminal contacting section electrically connected to the battery cell, at one end in the longitudinal direction of a face of the battery opposing to the face on which the terminal contacting section is provided, a projecting portion which projects in the longitudinal direction of the face is provided. Meanwhile, another projecting portion which projects in the longitudinal direction of the face is provided at the other end. The projecting portions may have projecting lengths different from each other or may have projecting lengths and projecting thicknesses different from each other. A charging apparatus into which the battery is to be installed includes an accommodating section for the battery which in turn includes projection accommodating portions configured to individually accommodate the projecting portions. | 04-14-2011 |
Patent application number | Description | Published |
20100196627 | PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM - According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance. | 08-05-2010 |
20110053381 | METHOD FOR MODIFYING INSULATING FILM WITH PLASMA - Disclosed is a method for modifying an insulating film with plasma using a plasma processing apparatus which introduces a microwave into a processing chamber through a plane antenna having a plurality of holes. Processing gas containing a noble gas and oxygen is introduced into the processing chamber and microwave is introduced into the processing chamber through the plane antenna. Plasma composed mainly of O | 03-03-2011 |
20110073931 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A plasma nitriding process is followed by a selective etching process which removes a silicon oxynitride film formed on surfaces of both an element separation film and an insulation film while leaving a silicon nitride film formed on an electrode layer. The selective etching process removes the silicon oxynitride film formed on the surfaces of the element separation film and the insulation film. | 03-31-2011 |
20110124202 | PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM - According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance. | 05-26-2011 |
Patent application number | Description | Published |
20100148275 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a first MIS transistor formed on a first active region, and a second MIS transistor formed on a second active region. The first MIS transistor includes a first gate insulating film, and a first gate electrode including a first metal film and a first silicon film. The second MIS transistor includes a second gate insulating film, and a second gate electrode including the first metal film, a second metal film, and a second silicon film. | 06-17-2010 |
20110169100 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal. | 07-14-2011 |
20120056270 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an NMIS transistor including a first gate insulating film containing a high-k dielectric and a first gate electrode provided on the first gate insulating film and containing a metal material and a PMIS transistor including a second gate insulating film containing a high-k dielectric and a second gate electrode provided on the second gate insulating film and containing a metal material. A side surface of the first gate insulating film is located at an inner side of a side surface of the first gate electrode. A ratio of a length of the first gate insulating film along a gate length direction to a length of the first gate electrode along the gate length direction is lower than a ratio of a length of the second gate insulating film along the gate length direction to a length of the second gate electrode along the gate length direction. | 03-08-2012 |
20120139055 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film which is formed on a first active region of a semiconductor substrate and has a first high dielectric constant film, and a first gate electrode formed on the first gate insulating film. The second MIS transistor includes a second gate insulating film which is formed on a second active region of the semiconductor substrate and has a second high dielectric constant film, and a second gate electrode formed on the second gate insulating film. The second high dielectric constant film contains first adjusting metal. The first high dielectric constant film has a higher nitrogen concentration than the second high dielectric constant film, and does not contain the first adjusting metal. | 06-07-2012 |
20130056832 | SEMICONDUCTOR DEVICE - A first dual-gate electrode includes a gate electrode located on a first active region and having a first silicon film of a first conductivity type and a gate electrode located on a second active region and having a first silicon film of a second conductivity type. A second dual-gate electrode includes a gate electrode located on a third active region and having a second silicon film of the first conductivity type and a gate electrode located on a fourth active region and having a second silicon film of the second conductivity type. At least a portion of the first silicon film of the first conductivity type has a first-conductivity-type impurity concentration higher than that of a portion of the second silicon film of the first conductivity type located on the third active region. | 03-07-2013 |
20130087862 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor device includes: a transistor having a gate electrode formed on a semiconductor substrate and first and second source/drain regions formed in portions of the semiconductor substrate on both sides of the gate electrode; a gate interconnect formed at a position opposite to the gate electrode with respect to the first source/drain region; and a first silicon-germanium layer formed on the first source/drain region to protrude above the top surface of the semiconductor substrate. The gate interconnect and the first source/drain region are connected via a local interconnect structure that includes the first silicon-germanium layer. | 04-11-2013 |
Patent application number | Description | Published |
20100067352 | OBJECTIVE LENS ACTUATOR AND AN OPTICAL PICKUP - An objective lens actuator comprises, two objective lenses, each for focusing lights upon an optical disc, an objective lens holder member for holding the objective lenses thereon, and lens protectors for preventing the objective lenses from being contacted on the optical disc, wherein the lens protectors include first and second lens protectors, which are provided on both end portions of the objective lens holder member in a tracking direction, and a third lens protector, which is provided in a middle of the two objective lenses, wherein the first and second lens protectors, which are provided on both end portions of the objective lens holder member in the tracking direction, are provided the objective lenses and end portion of the objective lens holder member in the tracking direction, and the third lens protector, which is provided between the objective lenses, has a height closer to that of the optical disc than the protectors, which are provided on both end portions of the objective lens holder member in the tracking direction. | 03-18-2010 |
20100067354 | OPTICAL PICKUP AND AN OPTICAL DISC APPARATUS MOUNTING THE SAME THEREON - An optical pickup, mounting a lens actuator | 03-18-2010 |
20100149954 | OBJECTIVE LENS ACTUATOR, OPTICAL PICKUP AND OPTICAL DISC DRIVE - An objective lens actuator | 06-17-2010 |
Patent application number | Description | Published |
20110149713 | OBJECTIVE LENS DRIVE DEVICE AND OPTICAL PICKUP - In an optical pickup equipped with a semiconductor laser, electro-optical components such as a lens, and an objective lens drive device, the objective lens drive device includes objective lenses, a holder holding the objective lenses, a focusing coil, and tracking coils. The focusing coil is wound in parallel to the optical surface of the objective lens, and formed in a parallelogram shape having inclined portions provided near the tracking coils. The two tracking coils are placed on diagonal portions of the lens holder. | 06-23-2011 |
20110182163 | OPTICAL PICKUP DEVICE - The following problem associated with optical pickup devices is solved: the temperature of a laser element is increased by excessive temperature rise in a laser driver circuit and this degrades the quality of writing and reading information to and from an optical disc. In an optical pickup enclosure, there is formed a groove recessed into a U shape, extended from the upper surface thereof opposed to an optical disc to the lower surface of the optical pickup enclosure. An air guide passage through which an air flow is passed is formed of this groove recessed into a U shape and a circuit board fastened to the outer circumferential side of the optical pickup enclosure with a screw. At this time, the laser driver circuit element is attached to the side of the circuit board opposed to the air guide passage. In a radiation cover attached to the upper surface of the optical pickup enclosure and in thermal contact with the laser element, an opening is formed. This opening is substantially identical in shape with the aperture area in the air guide passage and is located in a position corresponding to the opening of the air guide passage in the upper surface of the optical pickup enclosure. Thus the air guide passage continues from the opening in the lower surface of the optical pickup enclosure to the surface opposed to the optical disc. | 07-28-2011 |
20110185375 | OBJECTIVE LENS DRIVING APPARATUS, OPTICAL PICKUP - High-performance and reliable objective lens driving apparatus and optical pickup wherein the tilt of an objective lens relative to an optical disc is suppressed are provided. The optical pickup is equipped with a semiconductor laser, an electro-optic component, and the objective lens driving apparatus. In this optical pickup, the objective lens driving apparatus is comprised of: a moving part including an objective lens, a holder that holds the objective lens, a focusing coil, and a tracking coil; a holding member for elastic support members that couples together multiple elastic support members providing elastic support on a fixed part and the moving part and is mounted on the moving part; the elastic support members that elastically support the moving part from the fixed part; and the fixed part. The holding member for elastic support members mounted on the moving part and the holder that holds the objective lens are joined together by fitting together a concavity and a convexity. | 07-28-2011 |
Patent application number | Description | Published |
20120268102 | SWITCHING APPARATUS AND TEST APPARATUS - To restrict a bowing amount of a piezoelectric actuator, provided is a switching apparatus comprising a contact point section including a first contact point; and an actuator that moves a second contact point to contact or move away from the first contact point. The actuator includes a first piezoelectric film that expands and contracts according to a drive voltage to change a bowing amount of the actuator, and a second piezoelectric film that is provided in parallel with the first piezoelectric film and restricts bowing of the actuator when the drive voltage is not being supplied to the first piezoelectric film. | 10-25-2012 |
20120286801 | MANUFACTURING METHOD, SWITCHING APPARATUS, TRANSMISSION LINE SWITCHING APPARATUS, AND TEST APPARATUS - An actuator is manufactured that includes piezoelectric film that does not suffer physical damage. Provided is a manufacturing method comprising first insulating layer deposition of depositing a first insulating layer on a substrate using an insulating material; first annealing of annealing the first insulating layer; first electrode layer deposition of depositing a first electrode layer on the first insulating layer using a conductive material; first piezoelectric film deposition of depositing a first piezoelectric film on the first electrode layer by applying a sol-gel material on the first electrode layer and annealing the sol-gel material; second electrode layer deposition of depositing a second electrode layer on the first piezoelectric film using a conductive material; second insulating layer deposition of depositing a second insulating layer on the second electrode layer using an insulating material; and second annealing of annealing the second insulating layer. | 11-15-2012 |
20130026021 | ACTUATOR MANUFACTURING METHOD, SWITCHING APPARATUS, TRANSMISSION LINE SWITCHING APPARATUS, AND TEST APPARATUS - To manufacture a switching apparatus that includes a piezoelectric actuator with increased lifespan, provided is a method for manufacturing a bimorph actuator, comprising first piezoelectric element layer formation of forming a first piezoelectric element layer on a substrate; support layer formation of forming a support layer made of an insulator on the first piezoelectric element layer; second piezoelectric element layer formation of forming a second piezoelectric element layer on the support layer; and removal of removing a portion of the substrate to form an actuator that includes the first piezoelectric element layer, the support layer, and the second piezoelectric element layer. | 01-31-2013 |
20130027057 | SWITCHING APPARATUS, SWITCHING APPARATUS MANUFACTURING METHOD, TRANSMISSION LINE SWITCHING APPARATUS, AND TEST APPARATUS - A package of a switching apparatus that houses an actuator having a movable contact point and in which a fixed contact point, which is electrically connected to or disconnected form the movable contact point, is accurately formed. Provided is a switching apparatus comprising a first substrate provided with a via that electrically connects a top surface thereof and a bottom surface thereof, while maintaining an air-tight state between the top surface and the bottom surface; a second substrate provided on the first substrate and in which is formed a through-hole that houses an actuator; and a third substrate provided on the second substrate and supporting the actuator, which has a moveable contact point. | 01-31-2013 |
20130037395 | SWITCHING APPARATUS AND TEST APPARATUS - A switching apparatus comprising a contact point section including a first contact point; an actuator including a first piezoelectric film that expands and contracts according to a first drive voltage and a second piezoelectric film provided in parallel with the first piezoelectric film and expands and contracts according to a second drive voltage, and a control section that controls the first drive voltage and the second drive voltage is provided. The actuator moves a second contact point to contact or move away from the first contact point according to the contraction and expansion of the first piezoelectric film and the second piezoelectric film. When switching from a contact state to a separated state, the control section stops supplying the first drive voltage and applies the second drive voltage causing the second piezoelectric film to contract to the second piezoelectric film, such that the actuator is biased to return. | 02-14-2013 |
20130038335 | SWITCHING APPARATUS AND TEST APPARATUS - Provided is a switching apparatus comprising a contact point section that includes a first contact point; an actuator that includes a second contact point and moves the second contact point to contact or move away from the first contact point; and a control section that controls a first drive voltage. The actuator includes a first piezoelectric film that expands and contracts according to the first drive voltage and a support layer disposed on the first piezoelectric film. The control section causes the first piezoelectric film to contract by causing a change from a voltage that applies an electric field that is less than a first coercive electric field to a voltage that applies an electric field that exceeds the first coercive electric field, and causes the first piezoelectric film to expand by outputting a voltage that applies an electric field that is less than a second coercive electric field. | 02-14-2013 |
20130285505 | ACTUATOR APPARATUS, TEST APPARATUS, AND TEST METHOD - Provided is an actuator apparatus including: an actuator that is provided with a driving voltage at one end and a reference potential at the other end to enable driving; a first setting section that is connected to the one end of the actuator and sets an operating speed of the actuator; a second setting section that is provided between the one end of the actuator and the reference potential, and sets the driving voltage of the actuator. | 10-31-2013 |
Patent application number | Description | Published |
20140346610 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film which is formed on a first active region of a semiconductor substrate and has a first high dielectric constant film, and a first gate electrode formed on the first gate insulating film. The second MIS transistor includes a second gate insulating film which is formed on a second active region of the semiconductor substrate and has a second high dielectric constant film, and a second gate electrode formed on the second gate insulating film. The second high dielectric constant film contains first adjusting metal. The first high dielectric constant film has a higher nitrogen concentration than the second high dielectric constant film, and does not contain the first adjusting metal. | 11-27-2014 |
20150090998 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE DEVICE - Each unit pixel includes a photoelectric converter formed above a semiconductor region, an amplifier transistor formed in the semiconductor region, and including a gate electrode connected to the photoelectric converter, a reset transistor configured to reset a potential of the gate electrode, and an isolation region formed in the semiconductor region between the amplifier transistor and the reset transistor to electrically isolate the amplifier transistor from the reset transistor. The amplifier transistor includes a source/drain region. The source/drain region has a single source/drain structure. | 04-02-2015 |
20150109503 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor. | 04-23-2015 |
20150123180 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE DEVICE - Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region. | 05-07-2015 |
20150137199 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line. | 05-21-2015 |
20150195466 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device has a plurality of imaging-purpose pixels and a plurality of focus detection-purpose pixels. Each of the imaging-purpose pixels are provided with a first lower electrode, a photoelectric conversion film formed on the first lower electrode, and an upper electrode formed on the photoelectric conversion film. Each of the focus detection-purpose pixels is provided with a second lower electrode, the photoelectric conversion film formed on the second lower electrode, and the upper electrode formed on the photoelectric conversion film. The area of the second lower electrode is smaller than the area of the first lower electrodes. The second lower electrode is provided on a position deviating from a pixel center of a corresponding focus detection-pixel, and two second lower electrodes corresponding to two focus detection purpose pixels included in the plurality of focus detection purpose pixels is arranged in mutually opposite directions. | 07-09-2015 |