Toshio Nakanishi
Toshio Nakanishi, Nirasaki-Shi JP
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20110086485 | METHOD FOR MANUFACTURING A MOS SEMICONDUCTOR MEMORY DEVICE, AND PLASMA CVD DEVICE - To manufacture a MOS semiconductor memory device having an insulating film laminate in which adjacent insulating films have band-gaps of different sizes, a plasma processing device which transmits microwaves to a chamber by means of a planar antenna having a plurality of holes is used to perform plasma CVD under pressure conditions that differ from at least pressure conditions used when forming the adjacent insulating films, and the insulating films are sequentially formed by altering the band-gaps of the adjacent insulating films that constitute the insulating film laminate. | 04-14-2011 |
Toshio Nakanishi, Hyogo-Ken JP
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20100052040 | METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PLASMA APPARATUS - A Plasma processing apparatus ( | 03-04-2010 |
20100140683 | SILICON NITRIDE FILM AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - Provided is a silicon nitride film which has an excellent charge storage capacity and thus is useful as a charge storage layer of a semiconductor memory device. The silicon nitride film having substantially uniform trap density in the film thickness direction has high charge storage performance. The silicon nitride film is formed by plasma CVD by using a plasma processing apparatus ( | 06-10-2010 |
20100307684 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus ( | 12-09-2010 |
Toshio Nakanishi, Amagasaki-Shi JP
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20080214017 | Forming Method and Forming System for Insulation Film - A gate insulation film ( | 09-04-2008 |
20080274370 | Method for Forming Insulation Film - In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency. | 11-06-2008 |
20090035950 | NITRIDING METHOD OF GATE OXIDE FILM - A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna. | 02-05-2009 |
20100096707 | Method for Forming Insulation Film - In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency. | 04-22-2010 |
20100105215 | METHOD OF MODIFYING INSULATING FILM - An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film. | 04-29-2010 |
20100196627 | PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM - According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance. | 08-05-2010 |
20110124202 | PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM - According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance. | 05-26-2011 |
20120126376 | SILICON DIOXIDE FILM AND PROCESS FOR PRODUCTION THEREOF, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - To produce a silicon dioxide film having concentration of hydrogen atoms below or equal to 9.9×10 | 05-24-2012 |
20120178268 | PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas. | 07-12-2012 |
20130072033 | PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas. | 03-21-2013 |
Toshio Nakanishi, Amagasaki City JP
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20100130023 | METHOD OF FORMING GATE INSULATION FILM, SEMICONDUCTOR DEVICE, AND COMPUTER RECORDING MEDIUM - In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large number of through holes. Nitrogen concentration in the gate insulation film formed by the plasma nitridation is 5 to 20% in atomic percentage. Even without subsequent annealing, it is possible to effectively prevent a boron penetration phenomenon in the DRAM and to reduce traps in the film causing deterioration in driving capability of the device. | 05-27-2010 |
Toshio Nakanishi, Takarazuka JP
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20090241310 | RLSA CVD DEPOSITION CONTROL USING HALOGEN GAS FOR HYDROGEN SCAVENGING - Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si | 10-01-2009 |
Toshio Nakanishi, Nirasaki City JP
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20120208376 | METHOD OF FORMING SILICON NITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A method of forming a silicon nitride film by using a plasma CVD method, where the silicon nitride film has abundant traps and is useful as a charge accumulation layer of a nonvolatile semiconductor memory device. A silicon nitride film having a lot of traps is formed by performing plasma CVD by using processing gases including a nitrogen gas and a gas of a compound formed of silicon atoms and chlorine atoms, and by setting a pressure in a processing container within a range between more than or equal to 0.1 Pa and less than or equal to 8 Pa, in a plasma CVD apparatus that performs film-formation by introducing microwaves in the processing container by using a planar antenna having a plurality of holes to generate plasma. | 08-16-2012 |
Toshio Nakanishi, Nirasaki JP
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20120315745 | CRYSTALLINE SILICON FILM FORMING METHOD AND PLASMA CVD APPARATUS - A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as Si | 12-13-2012 |
Toshio Nakanishi, Osaka JP
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20150082772 | ENGINE - An engine includes an engine body, a DPF case therein, high pressure and low pressure EGR paths, and a supercharger. The high pressure EGR path is between exhaust and intake manifolds. An exhaust gas discharge path extends from the DPF case. An intake pipe extends from the supercharger air compressor. The low pressure EGR path is between the exhaust gas discharge path of the DPF case and the intake pipe. The low pressure EGR path includes a low pressure EGR cooler. An extending direction of a crankshaft defines a longitudinal direction. A flywheel exists on a rear side. A width direction of the engine body defines a lateral direction. The low pressure EGR path includes a rear path portion extending along a rear side of the engine body, and a side path portion extending along a lateral side of the engine body on a side close to the exhaust manifold. | 03-26-2015 |
Toshio Nakanishi, Yamanashi JP
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20150093886 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method of one embodiment of the present invention is disclosed for growing a polycrystalline silicon layer on a base material to be processed. The plasma processing method includes: (a) a step for preparing, in a processing container, the base material to be processed; and (b) a step for growing the polycrystalline silicon layer on the base material by introducing microwaves for plasma excitation into the processing container, and introducing a silicon-containing raw material gas into the processing container. | 04-02-2015 |
20150162193 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals. | 06-11-2015 |
Toshio Nakanishi, Niwa-Gun JP
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20160139098 | MEASUREMENT APPARATUS - A measurement apparatus includes a plurality of modules and a main unit for collecting measurement data output from the modules. The housing of the main unit can be carried by a user of the measurement apparatus, and the plurality of modules are removably accommodated in the housing. A CAN I/F circuit of the main unit collects the measurement data output from the module accommodated in the housing. A main CPU of the main unit outputs the collected measurement data to, for example, a personal computer connected to the main unit. An internal memory and a USB memory connected to a USB memory module store the collected measurement data. | 05-19-2016 |