Patent application number | Description | Published |
20100291484 | Negative resist composition, patterning process, and testing process and preparation process of negative resist composition - There is disclosed a negative resist composition comprising at least (A) a base resin that is alkaline-soluble and is made alkaline-insoluble by action of an acid, and/or a combination of a base resin that is alkaline-soluble and is made alkaline-insoluble by reaction with a crosslinker by action of an acid, with a crosslinker, (B) an acid generator, and (C) a compound containing a nitrogen as a basic component, and forming a resist film having the film thickness X (nm) of 50 to 100 nm, wherein, in the case that the resist film is formed from the negative resist composition under the film-forming conditions for the pattern formation, a dissolution rate of the resist film into the alkaline developer used in the development treatment for the pattern formation is 0.0333X−1.0 (nm/second) or more and 0.0667X−1.6 (nm/second) or less. There can be a negative resist composition having excellent etching resistance and resolution and giving a good pattern profile even at the substrate's interface, a patterning process using the same, and a testing process and a preparation process of this negative resist composition. | 11-18-2010 |
20100304301 | Negative resist composition and patterning process using the same - There is disclosed a negative resist composition comprising (A) a base polymer which is soluble in alkali and which is insolubilized in alkali by an action of an acid; and/or a combination of a crosslinking agent and a base polymer which is soluble in alkali and which is reacted with the crosslinking agent by an action of an acid to thereby be insolubilized in alkali, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component; wherein the polymer to be used as the base polymer is: a polymer, which is obtained by polymerizing two or more kinds of monomers represented by the following general formula (1), or which is obtained by polymerizing a monomer mixture containing one or more kinds of monomers represented by the general formula (1) and one or more kinds of styrene monomers represented by the following general formula (2). | 12-02-2010 |
20110003251 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - The present invention relates to a positive resist composition and to a pattern forming process using the same. The present invention provides: a positive resist composition having an enhanced etching resistance and an excellent resolution and being capable of providing an excellent pattern profile even at a substrate-side boundary face of resist, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like; and a pattern forming process utilizing the positive resist composition. | 01-06-2011 |
20110129765 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - There is disclosed a negative resist composition wherein a base resin contains at least repeating units represented by the following general formula (1) and general formula (2) and has a weight average molecular weight of 1,000 to 10,000, and the compound containing a nitrogen atom as a basic component contains one or more kinds of amine compounds having a carboxyl group and not having a hydrogen atom covalently bonded to a base-center nitrogen atom. There can be a negative resist composition in which a bridge hardly occurs, substrate dependence is low and a pattern with a high sensitivity and a high resolution can be formed, and a patterning process using the same. | 06-02-2011 |
20110143266 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same. | 06-16-2011 |
20120308920 | SULFONIUM SALT, POLYMER, CHEMICALLY AMPLIFIED RESIST COMPOSITION USING SAID POLYMER, AND RESIST PATTERNING PROCESS - There is disclosed a sulfonium salt shown by the following general formula (1). There can be a sulfonium salt capable of introducing an acid-generating unit generating an acid having an appropriate acid strength and not impairing adhesion with a substrate into a base polymer; a polymer using the said sulfonium salt; a chemically amplified resist composition using the said polymer as a base polymer; and a patterning process using the said chemically amplified resist composition. | 12-06-2012 |
20140051025 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - There is disclosed a negative resist composition comprising at least: (A) a base polymer that is alkaline-soluble and is made alkaline-insoluble by action of an acid; (B) an acid generator; and (C) a basic component, wherein the base polymer at least contains a polymer including repeating units represented by the following general formula (1) and general formula (2) and having a weight average molecular weight of 1,000 to 10,000. There can be a negative resist composition hardly causing a bridge in forming a pattern and providing a high resolution and a patterning process using the same. | 02-20-2014 |
20150198876 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS - The present invention provides the onium salt comprises the material represented by the following general formula (0-1), | 07-16-2015 |
20150253664 | CHEMICALLY-AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERNING PROCESS USING THE SAME - The present invention provides a chemically-amplified positive resist composition including a sulfonium salt capable of providing a pattern having an extremely high resolution with low line edge roughness, and also provides a resist patterning process using the same. | 09-10-2015 |
20150268556 | CHEMICALLY-AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERNING PROCESS USING THE SAME - The present invention provides a chemically-amplified negative resist composition including a sulfonium salt capable of providing a pattern having an extremely high resolution with reduced line edge roughness, and also provides a resist patterning process using the same. | 09-24-2015 |
Patent application number | Description | Published |
20100129738 | POSITIVE RESIST COMPOSITION AND PATTERING PROCESS - A positive resist composition comprises a polymer comprising repeat units having formula (1) or (2). | 05-27-2010 |
20100304302 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS - A chemically amplified resist composition comprises a polymer comprising units having polarity to impart adhesion and acid labile units adapted to turn alkali soluble under the action of acid. The polymer comprises recurring units having formula (1) wherein R | 12-02-2010 |
20100316955 | CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING PROCESS - A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents. | 12-16-2010 |
20110086986 | DEPROTECTION METHOD OF PROTECTED POLYMER - Provided is a method of deprotecting a protected polymer, the method being capable of, in the deprotection reaction of a polymer comprising a unit structure having a phenolic hydroxyl group protected with an acyl group, deacylating the polymer in a short period of time while maintaining the other structure, and being capable of taking out the deacylated polymer while highly suppressing contamination of the deacylated polymer with a substance other than the polymer taking part in the reaction. More specifically, provided is a method of deprotecting a protected polymer comprising at least a step of dissolving in an organic solvent the protected polymer comprising at least a unit structure having a phenolic hydroxyl group protected with an acyl group and a deprotecting reagent selected from primary or secondary amine compounds each having a ClogP value of 1.00 or less with the proviso that in the secondary amine compound, neither of the two carbon atoms coupled to the nitrogen atom of the amino group is tertiary. The primary or secondary amine compounds are each represented preferably by HNR | 04-14-2011 |
20110171579 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A negative resist composition comprises a base polymer comprising recurring units having an alkylthio group and having a Mw of 1000-2500, an acid generator, and a basic component, typically an amine compound containing a carboxyl group, but not active hydrogen. A 45-nm line-and-space pattern with a low value of LER can be formed. | 07-14-2011 |
20110200919 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - A chemically amplified positive resist composition is provided comprising a polymer PB having an amine structure bound thereto and a polymer PA comprising recurring units having an acidic side chain protected with an acid labile protective group and recurring units having an acid generating moiety on a side chain. | 08-18-2011 |
20110200941 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS - A chemically amplified positive resist composition for EB or EUV lithography is provided comprising (A) a polymer or a blend of polymers wherein a film of the polymer or polymer blend is insoluble in alkaline developer, but turns soluble under the action of acid, (B) an acid generator, (C) a basic compound, and (D) a solvent. The basic compound (C) is a polymer comprising recurring units bearing a side chain having a secondary or tertiary amine structure as a basic active site and constitutes a part or the entirety of the polymer or polymers as component (A). | 08-18-2011 |
20110200942 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS - A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble polymer, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component, the polymer (A) turning alkali insoluble under the catalysis of acid. A basic polymer having a secondary or tertiary amine structure on a side chain serves as components (A) and (C). Processing the negative resist composition by EB or EUV lithography process may form a fine size resist pattern with advantages including uniform diffusion of base, improved LER, controlled deactivation of acid at the substrate interface, and a reduced degree of undercut. | 08-18-2011 |
20110212390 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning. | 09-01-2011 |
20110212391 | POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER. | 09-01-2011 |
20120029193 | POLYMERIZABLE MONOMERS - A monomer of formula (1) is provided wherein R | 02-02-2012 |
20120196211 | RESIST PATTERN FORMING PROCESS - A resist pattern is formed by coating a chemically amplified positive resist composition onto a substrate and prebaking to form a resist film, exposing to high-energy radiation, baking and developing with a developer to form a resist pattern, and heating the pattern for profile correction to such an extent that the line width may not undergo a change of at least 10%. An amount of a softening accelerator having a molecular weight of up to 800 is added to the resist composition comprising (A) a base resin, (B) an acid generator, (C) a nitrogen-containing compound, and (D) an organic solvent. | 08-02-2012 |
20120219887 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut. | 08-30-2012 |
20120219888 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut. | 08-30-2012 |
20140212810 | NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A polymer comprising recurring units (a) of styrene having an HFA group and an ester group adjacent thereto and recurring units (b) having a hydroxyl group is used as base resin to formulate a negative resist composition. The negative resist composition has a high dissolution contrast in alkaline developer, high sensitivity, high resolution, good pattern profile after exposure, and a suppressed acid diffusion rate. | 07-31-2014 |
20140329183 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition exhibits a high resolution and forms a negative resist pattern of a profile with minimized LER and undercut. | 11-06-2014 |
20140342274 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A polymer comprising 0.5-10 mol % of recurring units having acid generating capability and 50-99.5 mol % of recurring units providing for dissolution in alkaline developer is used to formulate a chemically amplified negative resist composition. When used in a lithography process, the composition ensures an effective sensitivity, makes more uniform the distribution and diffusion of the acid generating component in a resist film, and suppresses deactivation of acid at the substrate interface. The pattern can be formed to a profile which is improved in LER and undercut. | 11-20-2014 |
20150355544 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS - A resist composition is provided comprising (A) a carboxylic acid sulfonium salt whose anion moiety has a bulky structure of arenecarboxylate in which secondary or tertiary carbon atoms bond at both ortho-positions relative to the carbon atom in bond with carboxylate, as an acid diffusion regulator and (B) a polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. When processed by EB or EUV lithography, the resist composition exhibits a very high resolution and forms a pattern with minimal LER. | 12-10-2015 |
Patent application number | Description | Published |
20110073489 | CLEANING LIQUID, CLEANING METHOD, CLEANING SYSTEM, AND METHOD FOR MANUFACTURING MICROSTRUCTURE - According to embodiments, a cleaning liquid includes an oxidizing substance and hydrofluoric acid and exhibiting acidity. A cleaning method is disclosed. The method includes producing an oxidizing solution including an oxidizing substance by one selected from electrolyzing a sulfuric acid solution, electrolyzing hydrofluoric acid added to a sulfuric acid solution, and mixing a sulfuric acid solution with aqueous hydrogen peroxide. The method includes supplying the oxidizing solution and hydrofluoric acid to a surface of an object to be cleaned. | 03-31-2011 |
20110073490 | CLEANING METHOD, CLEANING SYSTEM, AND METHOD FOR MANUFACTURING MICROSTRUCTURE - According to one embodiment, a cleaning method is disclosed. The method can produce an oxidizing solution including an oxidizing substance by electrolyzing a dilute sulfuric acid solution. In addition, the method can supply a highly concentrated inorganic acid solution individually, sequentially, or substantially simultaneously with the oxidizing solution to a surface of an object to be cleaned. | 03-31-2011 |
20110143549 | ETCHING METHOD, METHOD FOR MANUFACTURING MICROSTRUCTURE, AND ETCHING APPARATUS - In one embodiment, an etching method is disclosed. The method can include producing an oxidizing substance by electrolyzing a sulfuric acid solution, and producing an etching solution having a prescribed oxidizing species concentration by controlling a produced amount of the produced oxidizing substance. The method can include supplying the produced etching solution to a surface of a workpiece. | 06-16-2011 |
Patent application number | Description | Published |
20100216792 | Pesticidal arylpyrrolidines - The invention is directed to arylpyrrolidines compounds which exhibit excellent insecticidal efficacy and which may be used as in the agrochemical field or in the field of veterinary medicine. The compounds are represented by formula (I): | 08-26-2010 |
20110003690 | INSECTICIDAL ARYLPYRROLINES - The invention relates to novel arylpyrroline compounds of formula (I) which having excellent insecticidal activity and which can thus be used as an insecticide is provided. | 01-06-2011 |
20110071141 | Pesticidial Condensed-Ring Aryl Compounds - Condensed-ring aryl compounds of formula (I) and use of the same as a agrochemical for controlling noxious organisms wherein (X) | 03-24-2011 |
20110201603 | Novel Acylaminobenzamide Derivatives - The present invention relates to novel Acylaminobenzamide derivatives represented by the following formula (I) and use thereof as pesticides: wherein V represents an aromatic ring group of V1 to V5 described in the detailed description, Q represents an aromatic ring group of Q1 to Q7 described in the detailed description, G | 08-18-2011 |
20110237800 | HERBICIDE TRIAZOLYLPYRIDINE KETONES - Triazolylpyridine ketones expressed by the following formula (I) and use thereof as herbicides. | 09-29-2011 |
20130310408 | Pesticidal Arylpyrrolidines - The invention is directed to arylpyrrolidines compounds which exhibit excellent insecticidal efficacy and which may be used as in the agrochemical field or in the vield of veterinary medicine. The compounds are represented by formula (I): | 11-21-2013 |
20150073139 | Pesticidal Arylpyrrolidines - The invention is directed to arylpyrrolidines compounds which exhibit excellent insecticidal efficacy and which may be used as in the agrochemical field or in the vield of veterinary medicine. The compounds are represented by formula (I): | 03-12-2015 |