Patent application number | Description | Published |
20080203567 | SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR DEVICE USING THE SAME - A semiconductor package includes a print substrate which has a plurality of wiring layers. The print substrate has a wiring for connect pins extending internally across the plurality of wiring layers from one surface of the print substrate; a wiring for a non connect pin insulated in the thickness direction of the plurality of wiring layers by a void formed to an intermediate wiring layer as one of the plurality of wiring layers; and a surge absorption wiring facing the wiring for the non connect pin across the void. The interval of the void between the wiring for the non connect pin and the surge absorption wiring is set smaller than the interval between a non connect pin to be disposed and a connect pin adjacent to the connect pin. | 08-28-2008 |
20110068681 | LUMINESCENT COMPOSITION AND INORGANIC ELECTROLUMINESCENT SHEET USING THE SAME - The present invention provides a luminescent composition which is capable of providing an inorganic electroluminescent sheet with a high productivity at low costs in an efficient manner, and has a desired light transmittance (transparency) when no electric voltage is applied thereto, an inorganic electroluminescent sheet obtained from the luminescent composition which can be mass-produced, and a process for producing the inorganic electroluminescent sheet. The present invention relates to a luminescent composition including an inorganic electroluminescent substance and a binder resin, wherein a content of the inorganic electroluminescent substance is not less than 0.5 part by mass and less than 100 parts by mass on the basis of 100 parts by mass of the binder resin; and an inorganic electroluminescent sheet including at least a first transparent substrate, a first transparent electrode, an inorganic electroluminescent layer, a first transparent electrode and a second transparent substrate which are successively laminated in this order, wherein the inorganic electroluminescent layer is formed from the above luminescent composition, and the inorganic electroluminescent sheet has a light transmittance of 60% or more as measured at a wavelength of 550 nm under a non-light emitting condition. | 03-24-2011 |
20110085437 | SHEET FOR MULTILAYER OPTICAL RECORDING MEDIUM AND MULTILAYER OPTICAL RECORDING MEDIUM USING THE SAME - Disclosed is a sheet for producing a multilayer optical recording medium having a repeating structure wherein a plurality of optical recording layers are laminated. The sheet for a multilayer optical recording medium has a structure having a unit wherein an optical recording layer and an adhesive layer are laminated, or a structure having a unit wherein an optical recording layer, a barrier layer and an adhesive layer are laminated in this order. The maximum height roughness (Rz) of the optical recording layer or the barrier layer is not more than 500 nm. A multilayer optical recording medium is produced by using the sheet for a multilayer optical recording medium. Also disclosed is a sheet for producing, with high precision, a high-quality multilayer optical recording medium having a repeating unit wherein a plurality of optical recording layers containing a multiphoton absorbing material are laminated. A multilayer optical recording medium is also produced by using this sheet. | 04-14-2011 |
20110189450 | FORMED ARTICLE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - A formed article includes a gas barrier layer that is formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the formed article, and an electronic device includes the electronic device member. The formed article exhibits an excellent gas barrier capability and excellent transparency. | 08-04-2011 |
20110274933 | LAMINATE, METHOD FOR PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - A laminate comprises a gas barrier layer and an inorganic compound layer, the gas barrier layer being formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content rate that gradually decreases from the surface of the gas barrier layer in the depth direction, and having a carbon atom content rate that gradually increases from the surface of the gas barrier layer in the depth direction. An electronic device member includes the laminate, and an electronic device includes the electronic device member. The laminate exhibits an excellent gas barrier capability and excellent transparency, and does not produce cracks (i.e., the gas barrier capability does not deteriorate) even when the laminate is folded. The laminate exhibits an excellent gas barrier capability and an excellent impact-absorbing capability even if an impact is applied from the outside. | 11-10-2011 |
20120034423 | METHOD OF FORMING METAL OXIDE FILM AND METAL OXIDE FILM - The present invention provides; a method for forming a metal oxide film which has both a surface irregularity and a predetermined pattern or either and has few unevenness of surface specific resistance, light transmittance and the like, and such the metal oxide film. | 02-09-2012 |
20120041116 | FORMED ARTICLE, METHOD FOR PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - Disclosed is a formed article comprising an ion-implanted layer obtained by implanting ions of a silicon compound into a polymer layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a silicon compound into a surface of a polymer layer of a formed body that includes the polymer layer in its surface; an electronic device member comprising the formed article; an electronic device comprising the electronic device member. Consequently, the present invention provides: a formed article which has excellent gas barrier capability, bendability and surface flatness; a method of producing the formed article, an electronic device member comprising the formed article; an electronic device comprising the electronic device member. | 02-16-2012 |
20120064321 | FORMED ARTICLE, METHOD FOR PRODUCING THE FORMED ARTICLE, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - A formed article includes a gas barrier layer that is formed of a material including at least an oxygen atom and a silicon atom, a surface area of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on the total content of oxygen atoms, nitrogen atoms, and silicon atoms, and having a film density of 2.4 to 4.0 g/cm | 03-15-2012 |
20120088880 | Formed Article, Method for Producing Same, Electronic Device Member, and Electronic Device - Disclosed is a formed article comprising a layer obtained by implanting ions of a hydrocarbon compound into a polyorganosiloxane compound-containing layer. Also disclosed are: a method of producing the formed article, the method comprising implanting ions of a hydrocarbon compound into a surface of a polyorganosiloxane compound-containing layer of a formed body that includes the polyorganosiloxane compound-containing layer in its surface; an electronic device member that includes the formed article; and an electronic device that includes the electronic device member. The present invention provides; a formed article which exhibits an excellent gas barrier capability, transparency, bendability, antistatic performance, and surface flatness; a method of producing the formed article, an electronic device member, and an electronic device. | 04-12-2012 |
20120108761 | FORMED ARTICLE, METHOD OF PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - A formed article comprising a layer obtained by implanting ions into a polycarbosilane compound-containing layer, a method of producing the formed article, an electronic device member, and an electronic device comprising the electronic device member. The formed article has an excellent gas barrier capability, excellent transparency, excellent bendability, excellent adhesion, and excellent surface flatness. | 05-03-2012 |
20120121917 | LAMINATE, METHOD FOR PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - Disclosed is a laminate comprising a gas barrier layer and a conductor layer, the gas barrier layer being formed of a material that includes at least an oxygen atom, a carbon atom, and a silicon atom, the gas barrier layer having an oxygen atom content that gradually decreases from a surface of the gas barrier layer in a depth direction, and having a carbon atom content that gradually increases from the surface of the gas barrier layer in the depth direction. Also disclosed are a method of producing the laminate, an electronic device member that includes the laminate, and an electronic device that includes the electronic device member. The above laminate exhibits an excellent gas harrier capability and excellent interlayer adhesion, and the conductor layer of the above laminate has high surface smoothness. Since the above laminate enables an increase in flexibility and a reduction in weight, the laminate may suitably be used as an electronic device member for a display (e.g., organic EL display), a solar battery, or the like. Since the laminate enables roll-to-roll mass production, cost can be reduced. | 05-17-2012 |
20120295120 | TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCING SAME, AND ELECTRONIC DEVICE EMPLOYING TRANSPARENT CONDUCTIVE FILM - Disclosed is a transparent conductive film, including a substrate and, formed on at least one surface of the substrate, a gas barrier layer and a transparent conductive layer, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, nitrogen atoms, and silicon atoms, and includes a surface layer part which has an oxygen atom fraction of 60 to 75%, a nitrogen atom fraction of 0 to 10%, and a silicon atom fraction of 25 to 35%, each atom fraction being calculated with respect to the total number of the oxygen atoms, nitrogen atoms, and silicon atoms contained in the surface layer part and which has a film density of 2.4 to 4.0 g/cm | 11-22-2012 |
20120301710 | TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCING SAME, AND ELECTRONIC DEVICE EMPLOYING TRANSPARENT CONDUCTIVE FILM - A transparent conductive film which exhibits excellent gas barrier performance and electrical conductivity, and exhibits low sheet resistivity and high electrical conductivity, even after having been placed in moist and high-temperature conditions. The conductive film is in the form of a zinc oxide-based electrically conductive stacked structure, and the film includes a substrate and, formed on at least one surface of the substrate, (A) a gas barrier layer and (B) a transparent conductive layer formed of a zinc oxide-based conductive material, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, carbon atoms, and silicon atoms, and includes a region in which the oxygen atom concentration gradually decreases and the carbon atom concentration gradually increases from the surface in the depth direction of the layer. | 11-29-2012 |
20130008697 | IRREGULAR-SURFACE FORMING METHOD USING PLASMA-ETCHING PROCESS, AND ELECTRODE MEMBER - A method is provided forming a predetermined irregular-surface pattern on a substrate. The method includes carrying out a plasma-etching process using a partly oxidized metal salt film having fine irregular-surface as a resist. In a first step, a metal salt film is formed on the substrate by coating a liquid material containing a metal salt. In a second step, a fine irregular-surface is formed on the metal salt film, and the metal salt film was converted into the resist by the partial oxidization. In a third step, a predetermined irregular-surface is formed on the substrate by carrying out the plasma-etching process to the substrate with the resist. | 01-10-2013 |
20130052458 | ZINC OXIDE-BASED CONDUCTIVE MULTILAYER STRUCTURE, PROCESS FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE - A zinc-oxide-based conductive stacked structure | 02-28-2013 |
20130202900 | FORMED BODY, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE - The present invention is a formed article sequentially comprising a base layer, a primer layer that includes a hydroxyl group-containing polymer, and a gas barrier layer, the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm | 08-08-2013 |
20140040948 | INFORMATION DISTRIBUTION DEVICE, INFORMATION RECEPTION DEVICE, SYSTEM, PROGRAM, AND METHOD - Provided are an information distribution device, system, program, and method that can increase the effectiveness of advertisements. The information distribution device selects advertisements to distribute based on viewer attributes collected while distributing content to a display unit. | 02-06-2014 |
20140308494 | GAS BARRIER FILM, METHOD FOR PRODUCING SAME, GAS BARRIER FILM LAMINATE, MEMBER FOR ELECTRONIC DEVICES, AND ELECTRONIC DEVICE - The present invention provides: a gas barrier film comprising a cured resin layer and a gas barrier layer, the gas barrier layer being provided on at least one side of the cured resin layer,
| 10-16-2014 |
20140374665 | FORMED ARTICLE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE - Provided is a formed article including a layer obtained by implanting ions of a hydrocarbon compound into a polysilazane compound-containing layer. Also provided are a method for producing the formed article, an electronic device member including the formed article, and an electronic device including the electronic device member. The formed article exhibiting an excellent gas barrier capability and excellent bending resistance, a method for producing the formed article, and an electronic device member, or the like, comprising the formed article are provided. | 12-25-2014 |
20150099094 | GAS BARRIER LAMINATE, METHOD FOR PRODUCING SAME, MEMBER FOR ELECTRONIC DEVICES, AND ELECTRONIC DEVICE - The present invention provides: a gas barrier laminate comprising a base, a primer layer, and a gas barrier layer, the primer layer and the gas barrier layer being sequentially stacked on at least one side of the base, the primer layer having a modulus of elasticity at 90° C. of 1.6 GPa or more, and a coefficient of static friction between a surface of one side of the gas barrier laminate and a surface of the other side of the gas barrier laminate being 0.35 to 0.8; a method for producing the gas barrier laminate; an electronic device member comprising the gas barrier laminate; and an electronic device. | 04-09-2015 |
20150367602 | GAS BARRIER FILM LAMINATE, PRODUCTION METHOD THEREFOR, AND ELECTRONIC DEVICE - Provided is a gas barrier film laminate comprising at least two gas barrier films, the gas barrier film laminate having a structure in which two gas barrier films that are situated adjacent to each other are stacked through an adhesive layer, the adhesive layer being formed by curing an adhesive composition layer that is formed using an energy ray-curable adhesive composition by applying energy rays to the adhesive composition layer. Also provided are a method for producing the gas barrier film laminate and an electronic device comprising the gas barrier film laminate. The present invention provides: a gas barrier film laminate that exhibits an excellent moisture barrier capability, and rarely shows a deterioration in external appearance (e.g., due to occurrence of air bubbles) even when allowed to stand at a high temperature and a high humidity for a long time, a method for producing the gas barrier film laminate, and an electronic device that includes the gas barrier film laminate. | 12-24-2015 |
20160053130 | LAMINATE, METHOD FOR PRODUCING SAME, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - This laminate is a laminate ( | 02-25-2016 |
20160076133 | GAS BARRIER LAMINATE, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - The present invention is a gas barrier laminate comprising a base and a gas barrier unit, the gas barrier unit comprising at least two inorganic layers, at least one of the at least two inorganic layers being a silicon oxynitride layer, the silicon oxynitride layer including a composition-gradient region that has a thickness of 25 nm or more, the composition-gradient region being a region in which a content ratio of oxygen decreases and a content ratio of nitrogen increases in a thickness direction toward the base, and a ratio of the thickness of the composition-gradient region to the thickness of the entire silicon oxynitride layer being 0.15 or more. The present invention also relates to: an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member. The present invention provides: a gas barrier laminate that exhibits a very high gas barrier capability and very high bendability, an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member. | 03-17-2016 |
Patent application number | Description | Published |
20120111399 | SOLAR CELL ELECTRODE - A method for forming a solar cell electrode, comprising the steps of: applying a conductive paste comprising an organic binder and inorganic components comprising conductive powder and glass frit onto a passivation layer with at least 200 nm thickness formed on one surface or on both front and back surfaces of a silicon substrate, wherein the softening point of the glass frit is 395° C. or lower; and firing the conductive paste applied onto the passivation layer. | 05-10-2012 |
20130160834 | BACK-SIDE ELECTRODE OF P-TYPE SOLAR CELL, AND METHOD FOR FORMING THE SAME - The invention relates to a back-side electrode adjacently formed on silicon layer of p-type solar cell, comprises a conductive component comprising, before firing, (a) aluminum powder, (b) organic medium and (c) metal-containing component selected from the group consisting of (i) metal selected from the group consisting of Titanium(Ti), Manganese(Mn) and Cerium (Ce), and (ii) carbide, oxide, nitride, boride, carbonate, hydroxide and resinate of (i) metal. | 06-27-2013 |
20130160835 | BACK-SIDE ELECTRODE OF P-TYPE SOLAR CELL AND METHOD FOR FORMING THE SAME - The invention relates to a back-side electrode adjacently formed on silicon layer of p-type solar cell comprises a conductive component comprising (a) aluminum powder, (b) organic medium and (c) metal-containing component selected from the group consisting of (i) metal selected from the group consisting of Bismuth (Bi), Molybdenum (Mo), Strontium (Sr) and Stibium (Sb), and (ii) carbide, oxide, nitride, boride, carbonate, hydroxide and resinate of (i) metal, and (iii) Copper (Cu). | 06-27-2013 |
20140190560 | BACK-SIDE ELECTRODE OF P-TYPE SOLAR CELL - A back-side aluminum electrode adjacently formed on silicon wafer of p-type solar cell, comprising, (a) first aluminum layer and (b) second aluminum layer, wherein (a) first aluminum layer formed adjacent to the silicon wafer, formed from first aluminum paste comprises aluminum powder and glass frit, wherein the weight ratio of the glass frit for the aluminum powder (glass/aluminum) is 0.02-1.0, and wherein (b) second aluminum layer formed adjacent to the first aluminum layer, formed from second aluminum paste comprises at least aluminum powder, wherein the weight ratio (glass/aluminum) of the second aluminum paste is less than the weight ratio(glass/aluminum) of the first aluminum paste. | 07-10-2014 |
20140290729 | SOLAR CELL COMPRISING A P-DOPED SILICON WAFER AND AN ALUMINUM ELECTRODE - A solar cell comprising a p-doped silicon wafer, wherein the p-doped silicon wafer comprises a light-receiving side and a back side; and an aluminum electrode formed on the back side of the silicon wafer; wherein the aluminum electrode comprises an aluminum base layer formed adjacently on the back side of the silicon wafer and an aluminum cover layer formed on the aluminum base layer, and wherein the aluminum cover layer comprises aluminum and boron oxide (B | 10-02-2014 |
20150344749 | THERMALLY-CONDUCTIVE, ELECTRICALLY-CONDUCTIVE ADHESIVE COMPOSITION - The invention relates to a thermally conductive, electrically conductive adhesive composition including:
| 12-03-2015 |
Patent application number | Description | Published |
20130047889 | FORMED ARTICLE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE - Provided is a formed article including a layer obtained by implanting ions of a hydrocarbon compound into a polysilazane compound-containing layer. Also provided are a method for producing the formed article, an electronic device member including the formed article, and an electronic device including the electronic device member. The formed article exhibiting an excellent gas barrier capability and excellent bending resistance, a method for producing the formed article, and an electronic device member, or the like, comprising the formed article are provided. | 02-28-2013 |
20130058024 | FORMED ARTICLE, METHOD FOR PRODUCING THE SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - Provided is a formed article comprising at least a gas barrier layer, the gas barrier layer being formed of a material that includes silicon atoms, oxygen atoms, and carbon atoms, a carbon atom content, a silicon atom content, and an oxygen atom content in a surface layer part of the gas barrier layer determined by XPS elemental analysis being 10.0 to 28.0%, 18.0 to 28.0%, and 48.0 to 66.0%, respectively, based on a total content (=100 atom %) of silicon atoms, oxygen atoms, and carbon atoms, and the formed article having a water vapor transmission rate at a temperature of 40° C. and a relative humidity of 90% of 5.3 g/m | 03-07-2013 |
20130068136 | FORMED ARTICLE, METHOD FOR PRODUCING SAME, ELECTRONIC DEVICE MEMBER, AND ELECTRONIC DEVICE - Provided a formed article comprising a layer that includes a polysilazane compound and a clay mineral, and having a water vapor transmission rate at a temperature of 40° C. and a relative humidity of 90% of 6.0 g/m | 03-21-2013 |
20130202899 | MOLDING, PRODUCTION METHOD THEREFOR, PART FOR ELECTRONIC DEVICES AND ELECTRONIC DEVICE - The invention is a formed article including a gas barrier layer, the gas barrier layer including a surface layer part that is formed of a material that includes at least a carbon atom, an oxygen atom, and a silicon atom, the surface layer part having a carbon atom content rate of more than 0 and not more than 70%, an oxygen atom content rate of 10 to 70%, a nitrogen atom content rate of 0 to 35%, and a silicon atom content rate of 20 to 55%, based on a total content rate of carbon atoms, oxygen atoms, nitrogen atoms, and silicon atoms; a method for producing the formed article; an electronic device member including the formed article; and an electronic device comprising the electronic device member. The formed article of the invention exhibits an excellent gas barrier capability, excellent transparency, and excellent bending resistance. The method for producing a formed article of the invention can efficiently, safely, and conveniently produce the formed article of the invention. The electronic device member of the invention may suitably be used for electronic devices such as displays and solar cells. | 08-08-2013 |
20130224503 | FORMED BODY, PRODUCTION METHOD THEREOF, ELECTRONIC DEVICE MEMBER AND ELECTRONIC DEVICE - The present invention is a formed article sequentially including a base layer, a primer layer, and a gas barrier layer, the primer layer being formed of a material that includes at least a carbon atom, an oxygen atom, and a silicon atom, and is characterized in that a peak position of binding energy of 2p electrons of the silicon atom as determined by X-ray photoelectron spectroscopy (XPS) is 101.5 to 104 eV, and the gas barrier layer (I) being a layer obtained by implanting ions into a polymer layer that includes at least one compound selected from a group consisting of a polysilazane compound, a polyorganosiloxane compound, a polycarbosilane compound, and a polysilane compound, or (II) being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm | 08-29-2013 |
20130230730 | TRANSPARENT CONDUCTIVE FILM, PRODUCTION METHOD THEREFOR, MATERIAL FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - The present invention provides a transparent conductive film including a base layer, a gas barrier layer, and a transparent conductive layer, the gas barrier layer being formed of a material that includes at least oxygen atoms, carbon atoms, and silicon atoms, the gas barrier layer including an area (A) in which an oxygen atom content rate gradually decreases, and a carbon atom content rate gradually increases from a surface in a depth direction, the area (A) including a partial area (A1) and a partial area (A2), the partial area (A1) having an oxygen atom content rate of 20 to 55%, a carbon atom content rate of 25 to 70%, and a silicon atom content rate of 5 to 20%, based on a total content rate of oxygen atoms, carbon atoms, and silicon atoms, and the partial area (A2) having an oxygen atom content rate of 1 to 15%, a carbon atom content rate of 72 to 87%, and a silicon atom content rate of 7 to 18%, based on a total content rate of oxygen atoms, carbon atoms, and silicon atoms. | 09-05-2013 |
20130230731 | TRANSPARENT ELECTRICALLY CONDUCTIVE FILM AND PROCESS FOR PRODUCTION THEREOF, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - The present invention provides: a transparent conductive film comprising a base layer, a gas barrier layer, and a transparent conductive layer, the gas barrier layer being formed of a material that includes silicon atoms, oxygen atoms, and carbon atoms, a silicon atom content rate, an oxygen atom content rate, and a carbon atom content rate in a surface layer part of the gas barrier layer determined by XPS elemental analysis being 18.0 to 28.0%, 48.0 to 66.0%, and 10.0 to 28.0%, respectively, based on a total content rate (=100 atom %) of silicon atoms, oxygen atoms, and carbon atoms, and the transparent conductive film having a water vapor transmission rate at a temperature of 40° C. and a relative humidity of 90% of 6.0 g/m | 09-05-2013 |
20130244044 | GAS-BARRIER FILM, PROCESS FOR PRODUCING SAME, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130° C., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm | 09-19-2013 |